MITSUBISHI MGFS48B212 User Manual

< L/S band internally matched power GaAs FET >

MGFS48B2122

2.11 – 2.17 GHz BAND / 60W

DESCRIPTION

The MGFS48B2122 is a 60W push-pull type GaAs power FET especially designed for use in 2.11 – 2.17GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

OUTLINE

2.0±0.15

3.2±0.8

FEATURES

Push-pull configuration  High output power Pout=60W (TYP.) @f=2.17GHz

8.0±0.2

17.4 ±0.3

 High power gain GLP=12.0dB (TYP.) @f=2.17GHz  High power added efficiency P.A.E.=48% (TYP.) @f=2.17GHz

3.2±0.8

APPLICATION

 2.11-2.17GHz band power amplifier for W-CDMA Base Station

QUALITY

 IG

GF-47

RECOMMENDED BIAS CONDITIONS

 VDS=12V  ID=2.0A  RG=25ohm for each gate

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGDO VGSO Gate to source breakdown voltage -10 V PT *1 Total power dissipation 125 W Tch Cannel temperature 175 C Tstg Storage temperature -65 to +175 C

*1 : Tc=25C

Electrical characteristics

Symbol Parameter Test conditions Limits Unit

GLP Linear Power Gain VDS=12V,ID(RF off)=2.0A,f=2.17GHz

Pout Output Power 47 48 - dBm

ID Drain current - 11 15 A P.A.E. Power added efficiency

Rth(ch-c) *2

*2 :Channel-case

Gate to drain

Thermal resistance delta Vf method - 1 1.2

breakdown voltage -20 V

(Ta=25C)

Pin=22dBm VDS=12V,ID(RF off)=2.0A,f=2.17GHz Pin=39dBm

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable , but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury , fire or property damage. Remember to give due consideration to safety when making your circuit designs , with appropriate measure such as (I) placement of substitutive , auxiliary circuits , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

3.6±0.4

1.9

unit : mm

Keep Safety first in your circuit designs!

Min. Typ. Max.

11 12 - dB

- 48 - %

20.4 ±0.2

6.0

24.0±0.3

16.2

2.0 ± 0.1 5

gate

sourc e

drain

C/W



0.1

2.4±0.2

Publication Date : Apr., 2011

< L/S band internally matched power GaAs FET >

MGFS48B2122

2.11 – 2.17 GHz BAND / 60W

Keep safety first in your circuit designs!

Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product s better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.

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Notes regarding these materials

Publication Date : Apr., 2011