MITSUBISHI MGFS45V2527A User Manual
< L/S band internally matched power GaAs FET >
MGFS45V2527A
2.5 – 2.7 GHz BAND / 32W
DESCRIPTION
The MGFS45V2527A is an internally impedance-matched
OUTLINE DRAWING
GaAs power FET especially designed for use in 2.5 - 2.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
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N
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M
N
9
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7
M
0
0
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0
2
(
24.0±0.3(0.945±0.012)
Internally matched to 50(ohm) system
High output power
P1dB=32W (TYP.) @f=2.5 - 2.7GHz
High power gain
GLP=12.0dB (TYP.) @f=2.5 - 2.7GHz
High power added efficiency
P.A.E.=45% (TYP.) @f=2.5 - 2.7GHz
Low distortion [item -51]
IM3=-45dBc (TYP.) @Po=34.5dBm S.C.L
APPLICATION
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5
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8
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8
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7
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1
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N
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N
9
I
7
M
0
0
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0
2
(
20.4±0.2(0.803±0.008)
item 01 : 2.5 - 2.7 GHz band power amplifier
item 51 : 2.5 - 2.7 GHz band digital radio communication
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
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6
1
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4
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4
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6
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1
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VDS=10V ID=6.5A RG=25ohm
GF-51
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -15 V
ID Drain current 22 A
IGR Reverse gate current -61 mA
IGF Forward gate current 76 mA
PT *1 Total power dissipation 88 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Gate to drain
breakdown voltage -15 V
Electrical characteristics
(Ta=25C)
Symbol Parameter Test conditions Limits Unit
VGS(off)
P1dB
Gate to source cut-off voltage VDS=3V,ID=60mA - - -5 V
Output power at 1dB gain compression
GLP Linear Power Gain 11 12 - dB
ID Drain current - 7.5 - A
P.A.E. Power added efficiency - 45 - %
IM3 *2 3rd order IM distortion
VDS=10V,ID(RF off)=6.5A
f=2.5 - 2.7GHz
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
44 45 - dBm
-42 -45 - dBc
Unit : millimeters (inches)
1
0.6±0.15
(0.024±0.006)
3
15.8(0.622)
GATE
1
SOURCE(FLANGE)
2
DRAIN
3
2
5
0
2
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0
0
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1
4
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0
2
)
8
0
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4
9
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Rth(ch-c) *3
Thermal resistance delta Vf method - - 1.5
*2 :item -51 ,2 tone test,Po=34.5dBm Single Carrier Level ,f=2.5,2.6,2.7GHz,delta f=5MHz
*3 :Channel-case
Publication Date : Apr., 2011
1
C/W
< L/S band internally matched power GaAs FET >
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MGFS45V2527A
2.5 – 2.7 GHz BAND /32W
MGFS45V2527A TYPICAL CHARACTERISTICS
46
45
P1dB,GLP vs. f
VDS=10(V)
IDS=6.5(A )
16
P1dB
15
50
45
40
Po , P.A.E. vs. Pin
VDS=10 ( V)
IDS=6.5(A)
f=2.6 (GHz)
Pout
70
60
50
44
43
OUTPU T POWER P1dB(dBm
42
GLP
41
2.45 2.5 2.55 2.6 2.65 2.7 2.75
42
VDS=10(V)
IDS=6.5(A)
40
f1=2.700(GHz)
f2=2.705(GHz)
38
36
34
32
30
OUTPUT P OW ER Po (dBm S.C.L.
28
26
24
14 16 18 20 22 24 26 28 30 32 34
FREQ UENCY f (GHz)
Po,IM3 vs. P in
Po
IM3
IN PUT POWER Pin (dBm S.C.L.)
14
13
12
11
20
10
0
-10
-20
-30
-40
-50
-60
-70
35
30
OUTPUT POWER Pout (dBm
25
LINEAR POWER GAIN GLP (dB
20
15
15 20 25 30 35
IM 3 (dBc)
INPUT POWER ( d Bm )
P.A.E.
40
30
20
10
POWER ADDED EFFICIENCY P.A.E. (%
0
MGFS45V2527A S-parameters ( Ta=25deg.C , VDS=10(V),IDS=6.5(A) )
fS11 S21 S12 S22
(GHz) Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg) Magn. Angle(deg)
2.40
2.42
2.44
2.46
2.48
2.50
2.52
2.54
2.56
2.58
2.60
2.62
2.64
2.66
2.68
2.70
2.72
2.74
2.76
2.78
0.34 -172 4.68 75 0.03 40 0.26 -48
0.35 -176 4.65 70 0.03 34 0.26 -53
0.37 177 4.63 64 0.03 26 0.24 -57
0.40 170 4.60 58 0.03 19 0.24 -65
0.41 163 4.56 52 0.03 14 0.22 -69
0.43 157 4.53 46 0.03 5 0.21 -79
0.43 151 4.51 40 0.03 -1 0.20 -81
0.44 145 4.49 34 0.04 -9 0.20 -86
0.45 139 4.47 28 0.03 -15 0.20 -91
0.45 134 4.44 22 0.04 -22 0.20 -97
0.45 128 4.43 16 0.04 -29 0.19 -104
0.45 122 4.42 10 0.04 -37 0.19 -108
0.44 116 4.41 4 0.04 -42 0.19 -113
0.44 110 4.40 -2 0.04 -50 0.19 -117
0.43 103 4.40 -8 0.04 -55 0.19 -120
0.42 96 4.39 -14 0.04 -62 0.18 -126
0.40 88 4.37 -21 0.04 -70 0.18 -128
0.39 80 4.37 -27 0.04 -74 0.17 -133
0.37 71 4.35 -34 0.04 -79 0.17 -136
0.36 61 4.34 -40 0.04 -88 0.16 -138
2.80 0.34 50 4.32 -47 0.04 -95 0.16 -141
S-Parame ter (TYP. )
Publication Date : Apr., 2011
2
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