MITSUBISHI MGFS45B2527B User Manual
< L/S band internally matched power GaAs FET >
MGFS45B2527B
2.5 – 2.7 GHz BAND / 30W
DESCRIPTION
The MGFS45B2527B is an internally impedance-matched
GaAs power FET especially designed for use in 2.5 – 2.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class AB operation
Internally matched to 50(ohm) system
High output power
Po(SAT)=30W (TYP.) @f=2.5 – 2.7GHz
High power gain
GLP=12.5dB (TYP.) @f=2.5 – 2.7GHz
Distortion
EVM=1.0% (TYP.) @f=2.5 – 2.7GHz, Po=34dBm
EVM=2.0% (TYP.) @f=2.5 – 2.7GHz, Po=37dBm
RECOMMENDED BIAS CONDITIONS
VDS=12V ID=0.9A RG=10ohm
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO
VGSO Gate to source breakdown voltage -10 V
MAXID Maximum drain current 10 A
PT *1 Total power dissipation 78 W
Tch Cannel temperature 175 C
Tstg Storage temperature -55 to +150 C
*1 : Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
VGS(off)
Po(SAT) Output Power
GLP Power Gain 10.0 12.5 - dB
ID Drain current - 1.2 1.5 A
EVM *2 Error Vector Magnitude
Rth(ch-c) *3
*2 :WiMAX Downlink, 64QAM-3/4, Channel Bandwidth:6MHz
*3 :Channel-case
Gate to drain
Gate to source cut-off voltage VDS=3V,ID=100mA -0.5 - -3.0 V
Thermal resistance delta Vf method - 1.2 1.9
breakdown voltage -15 V
(Ta=25C)
VDS=12V,ID(RF off)=0.9A
f=2.5 – 2.7GHz
VDS=12V,ID(RF off)=0.9A
f=2.5 – 2.7GHz ,Pout=34dBm
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Min. Typ. Max.
- 45 - dBm
- 1.0 2.0 %
C/W
Publication Date : Apr., 2011
1
< L/S band internally matched power GaAs FET >
MGFS45B2527B
2.5 – 2.7 GHz BAND / 30W
MGFS45B2527B TYPICAL CHARACTERISTICS
EVM,GP,ED(@WiMAX) vs. Pout
Test Condition
Vds=12V,Idq=0.9A,Ta=25deg.C
WiMAX:64QAM-3/4,Bw=6MHz
EVM,Gain(@WiMAX) vs. f
Test Condition
Vds=12V,Idq=0.9A,Pout=34dBm,Ta=25deg.C
WiMAX:64QAM-3/4,Bw=6MHz
Publication Date : Apr., 2011
2
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