This application note show the RF characteristics data of MGF0952P
MGF0952P : Lot number "42AA"
"part shown as follows, there is an evaluation result. )
Page2-3 shows the RF characteristics data.
Page 4 shows the Equivalent Circuit.
RF characteristics data of MGF0952P for Freq.=2.5-2.7GHz band
HIGH FREQUENCY & OPTICAL DEVICE WORKS
MITSIBISHI ELECTRIC CORPORATION (1/4 )
APPLICATION NOTE
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IDQ CW ACLR
0.7 0.56
ELECTRIC SEMICONDUCTOR
Date : 25th May. 2005
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IDQ
0.7 0.56
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IDQ
0.7 0.56
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MGF0952P RF TEST DATA for Freq=2.5-2.7GHz
HIGH FREQUENCY & OPTICAL DEVICE WORKS
MITSIBISHI ELECTRIC CORPORATION (2/4 )
Po,Id(RF) v.s. Pin Freq.=2.35GHz CW
(1tone) VD=10V,IDQ=0.7A
40
2.0
Po,Id(RF) v.s. Pin Freq.=2.35GHz CW
(1tone) VD=10V
40
2.0
35
30
Tc=80deg.C(Po)
25
20
Po(dBm)
Tc=25deg.C(Po)
Tc=-20deg.C(Po)
Tc=80deg.C(Id(RF))
Tc=25deg.C(Id(RF))
Tc=-20deg.C(Id(RF))
15
10
5
0
5 10 15 20 25 30 35
Pin(dBm)
Po v.s. Freq. CW (1tone)
VD=10V,IDQ=0.7A
40
35
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
35
30
25
20
Id(RF)(A)
Po(dBm)
15
IDQ=0.7A(Po)
IDQ=0.56A(Po)
IDQ=0.7A(Id(RF))
IDQ=0.56A(Id(RF))
10
5
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Id(RF)(A)
5 10 15 20 25 30 35
Pin(dBm)
Po,Id(RF) v.s. Pin Freq.=2.35GHz CW
(1tone) IDQ=0.7A
40
35
30
2.0
1.8
1.6
30
25
Po(dBm)
20
Pin=17dBm
Pin=22dBm
Pin=27dBm
15
2.45 2.50 2.55 2.60 2.65 2.70 2.75
Freq.(GHz)
25
20
Po(dBm)
15
VD=10V(Po)
VD=9V(Po)
VD=10V(Id(RF))
VD=9V(Id(RF))
10
5
0
5 10 15 20 25 30 35
Pin(dBm)
1.4
1.2
1.0
0.8
0.6
0.4
Id(RF)(A)