Page 1
MITSUBISHI
SUBJECT:
SUMMARY:
Evaluate conditions(In "
Apr. 2005
RF characteristics data of MGF0951P for Freq.=1.85-1.95GHz band
HIGH FREQUENCY & OPTICAL DEVICE WORKS
MITSIBISHI ELECTRIC CORPORATION (1/4 )
APPLICATION NOTE
This application note show the RF characteristics data of MGF0951P
－ Sample history:
MGF0951P : Lot number "3XAF"
－
"part shown as follows, there is an evaluation result. )
ELECTRIC SEMICONDUCTOR
Date : 5th Apr. 2005
CW(1tone) Tc
VD 10 Tc=25deg.C +25 Freq.=1.9GHz
9 Freq.=1.9GHz +80
ACLR
VD 10 Tc=25deg.C
9 Freq.=1.9GHz
IMD
VD 10 Tc=25deg.C
9 Freq.=1.9GHz
Results
－
Page2-3 shows the RF characteristics data.
Page 4 shows the Equivalent Circuit.
IDQ
0.2 0.16
-
IDQ
0.2
0.2 0.16
0.16
-
IDQ
-
--
-20 Vd=10V,IDQ=0.2A
CW
ACLR
Page 2
Apr. 2005
MGF0951P RF TEST DATA for Freq.=1.85-1.95GHz BAND
HIGH FREQUENCY & OPTICAL DEVICE WORKS
MITSIBISHI ELECTRIC CORPORATION (2/4 )
Po,Id(RF) v.s. Pin Freq.=1.9GHz CW
(1tone) VD=10V,IDQ=0.5A
40
35
Tc=80deg.C(Po)
Tc=25deg.C(Po)
Tc=-20deg.C(Po)
Tc=80deg.C(Id(RF))
Tc=25deg.C(Id(RF))
Tc=-20deg.C(Id(RF))
30
0.8
0.7
0.6
Po,Id(RF) v.s. Pin Freq.=1.9GHz CW
(1tone) VD=10V,Tc=25deg.C
40
35
IDQ=0.2A(Po)
IDQ=0.16A(Po)
IDQ=0.2A(Id(RF))
IDQ=0.16A(Id(RF))
30
0.8
0.7
0.6
25
Po(dBm)
20
15
10
5
-5 0 5 10 15 20 25 30
Pin(dBm)
Po v.s. Freq. CW (1tone)
VD=10V,IDQ=0.2A,Tc=25deg.C
40
35
30
25
Po(dBm)
20
15
10
1.80 1.85 1.90 1.95 2.00
Freq.(GHz)
0.5
0.4
0.3
0.2
0.1
Pin=8dBm
Pin=13dBm
Pin=18dBm
25
Id(RF)(A)
20
Po(dBm)
15
10
5
0.5
0.4
0.3
0.2
0.1
Id(RF)(A)
-5 0 5 10 15 20 25 30
Pin(dBm)
Po,Id(RF) v.s. Pin Freq.=1.9GHz CW
(1tone) IDQ=0.2A,Tc=25deg.C
40
35
VD=10V(Po)
VD=9V(Po)
VD=10V(Id(RF))
VD=9V(Id(RF))
30
25
20
Po(dBm)
15
10
5
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Id(RF)(A)
-5 0 5 10 15 20 25 30
Pin(dBm)
Page 3
ACLR v.s. Po(W-CDMA) ; 3GPP TEST MODEL1 64ch's 2carrier Signal
Apr. 2005
MGF0951P RF TEST DATA for Freq.=1.85-1.95GHz BAND
HIGH FREQUENCY & OPTICAL DEVICE WORKS
MITSIBISHI ELECTRIC CORPORATION ( 3/4 )
ACLR v.s. Po VD=10V,IDQ=0.2A
Freq.=1.9GHz
Tc=80deg.C(-600KHz)
Tc=80deg.C(+600KHz)
Tc=80deg.C(-900KHz)
Tc=80deg.C(+900KHz)
Tc=25deg.C(-600KHz)
Tc=25deg.C(+600KHz)
Tc=25deg.C(-900KHz)
Tc=25deg.C(+900KHz)
Tc=-20deg.C(-600KHz)
Tc=-20deg.C(+600KHz)
Tc=-20deg.C(-900KHz)
Tc=-20deg.C(+900KHz)
ACP(dBc)
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
-5 0 5 10 15 20 25
Pin(dBm)
ACLR v.s. Po VD=10V Freq.=1.9GHz
Tc=25deg.C
-30
-35
-40
-45
-50
IDQ=0.2A(-600KHz)
IDQ=0.2A(+600KHz)
IDQ=0.2A(-900KHz)
IDQ=0.2A(+900KHz)
IDQ=0.16A(-600KHz)
IDQ=0.16A(+600KHz)
IDQ=0.16A(-900KHz)
IDQ=0.16A(+900KHz)
-55
-60
ACLR(dBc)
-65
-70
-75
-80
-5 0 5 10 15 20 25
Pin(dBm)
IM3,IM5 v.s. Po VD=10V,IDQ=0.2A
Tc=25deg.C
-20
-25
-30
-35
IM3 Low
IM3 High
IM5 Low
IM5 High
f1=1.90GHz
f2=1.91GHz
-40
-45
IM3,IM5(dBc)
-50
-55
-60
-65
5 10 15 20 25 30
Po(S.C.L.)(dBc)
ACLR v.s. Po IDQ=0.2A
Freq.=1.9GHz Tc=25deg.C
-30
-35
-40
-45
-50
VD=10V(-900KHz)
VD=10V(+900KHz)
VD=10V(-900KHz)
VD=10V(+900KHz)
VD=9V(-600KHz)
VD=9V(+600KHz)
VD=9V(-900KHz)
VD=9V(+900KHz)
-55
-60
ACLR(dBc)
-65
-70
-75
-80
-5 0 5 10 15 20 25
Pin(dBm)
Page 4
Apr. 2005
MGF0951P RF TEST DATA for Freq.=1.85-1.95GHz BAND
HIGH FREQUENCY & OPTICAL DEVICE WORKS
MITSIBISHI ELECTRIC CORPORATION ( 4/4 )
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