MITSUBISHI MGF0951P User Manual
< High-power GaAs FET (small signal gain stage) >
MGF0951P
L & S BAND / 1.2W
SMD / Plastic Mold non - matched
DESCRIPTION
The MGF0951P GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
High output power
Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
High power gain
Gp=13dB(TYP.) @f=2.15GHz
High power added efficiency
add=50%(TYP.) @f=2.15GHz,Pin=20dBm
Plastic Mold Lead – less Package
APPLICATION
For L/S Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=200mA Rg=500
Delivery Tape & Reel(1.5K)
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGSO
VGDO Gate to drain breakdown voltage -15 V
ID Drain current 800 mA
IGR Reverse gate current -2.5 mA
IGF Forward gate current 5.4 mA
PT Total power dissipation 6.0 W
Tch Cannel temperature 150 C
Tstg Storage temperature -40 to +150 C
Gate to source
breakdown voltage
-15 V
Electrical characteristics
(Ta=25C)
Symbol Parameter Test conditions Limits Unit
V
GS(off)
gm
Po
add *1
G
LP *2 Linear Power Gain
IM3 *3
Rth(ch-c)
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
3rd order Modulation Distortion
Thermal Resistance *4
VDS=3V,ID=2.5mA -1 - -5 V
VDS=3V,ID=300mA - 200 - mS
VDS=10V,ID=200mA,f=2.15GHz
Pin=20dBm, *2:Pin=10dB
*1:
f1=2.15GHz,f2=2.16GHz
*3:
Po(SCL)=20dBm
Vf Method - 20 25 C/W
Fig.1
Min. Typ. Max.
29.5 31 - dBm
- 50 - %
11 13 - dB
- -45 - dBc
*4:Channel to case / Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0951P
L & S BAND / 1.2W
SMD / Plastic Mold non - matched
MGF09151P TYPICAL CHARACTERISTICS
Publication Date : Apr., 2011
2
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