MITSUBISHI MGF0921A User Manual

MITSUBISHI

SUBJECT:

SUMMARY:

Evaluate conditions(In "

Apr. 2005

RF characteristics data of MGF0921A for Freq.=1.85-1.95GHz band

HIGH FREQUENCY & OPTICAL DEVICE WORKS

MITSIBISHI ELECTRIC CORPORATION (1/4 )

APPLICATION　　　　NOTE

　　This application note show the RF characteristics data of MGF0921A

－　　 Sample history:

MGF0921A : Lot number "47B"

－

"part shown as follows, there is an evaluation result. )

ELECTRIC　　　　SEMICONDUCTOR

Date : 5th Apr. 2005

CW(1tone) Tc

0.5 0.4

VD 10 Tc=25deg.C +25 Freq.=1.9GHz

9 Freq.=1.9GHz +80

ACLR

VD 10 Tc=25deg.C

9 Freq.=1.9GHz

IMD

VD 10 Tc=25deg.C

9 Freq.=1.9GHz

Results

－

Page2-3 shows the RF characteristics data.

Page 4 shows the Equivalent Circuit.

IDQ

0.5 0.4

IDQ

0.5 0.4

-

-

-

--

-20 Vd=10V,IDQ=0.5A

CW

ACLRIDQ

Apr. 2005

MGF0921A RF TEST DATA for Freq.=1.85-1.95GHz BAND

HIGH FREQUENCY & OPTICAL DEVICE WORKS

MITSIBISHI ELECTRIC CORPORATION (2/4 )

Po,Id(RF) v.s. Pin Freq.=1.9GHz CW

(1tone) VD=10V,IDQ=0.5A

40

35

Tc=80deg.C(Po)
Tc=25deg.C(Po)
Tc=-20deg.C(Po)
Tc=80deg.C(Id(RF))
Tc=25deg.C(Id(RF))
Tc=-20deg.C(Id(RF))

30

1.1

1.0

0.9

Po,Id(RF) v.s. Pin Freq.=1.9GHz CW

(1tone) VD=10V,Tc=25deg.C

40

35

IDQ=0.5A(Po)
IDQ=0.4A(Po)
IDQ=0.5A(Id(RF))
IDQ=0.4A(Id(RF))

30

1.1

1.0

0.9

25

20

Po(dBm)

15

10

5

0

-5 0 5 10 15 20 25

Pin(dBm)

Po v.s. Freq. CW (1tone)

VD=10V,IDQ=0.5A,Tc=25deg.C

35

30

25

0.8

0.7

0.6

0.5

0.4

0.3

25

20

Id(RF)(A)

Po(dBm)

15

10

5

0

0.8

0.7

0.6

0.5

0.4

0.3

Id(RF)(A)

-5 0 5 10 15 20 25

Pin(dBm)

Po,Id(RF) v.s. Pin Freq.=1.9GHz CW

(1tone) IDQ=0.5A,Tc=25deg.C

40

35

30

25

VD=10V(Po)
VD=9V(Po)
VD=10V(Id(RF))
VD=9V(Id(RF))

1.1

1.0

0.9

0.8

20

Po(dBm)

Pin=7dBm
Pin=12dBm

Pin=17dBm

15

10

1.80 1.85 1.90 1.95 2.00

Freq.(GHz)

20

Po(dBm)

15

10

5

0

-5 0 5 10 15 20 25

Pin(dBm)

0.7

0.6

0.5

0.4

0.3

Id(RF)(A)

ACLR v.s. Po(W-CDMA) ; 3GPP TEST MODEL1 64ch's 2carrier Signal

Apr. 2005

MGF0921A RF TEST DATA for Freq.=1.85-1.95GHz BAND

HIGH FREQUENCY & OPTICAL DEVICE WORKS

MITSIBISHI ELECTRIC CORPORATION ( 3/4 )

ACLR v.s. Po VD=10V,IDQ=0.5A

Freq.=1.9GHz

ACP(dBc)

-30

-35

-40

-45

-50

-55

-60

Tc=80deg.C(-600KHz)
Tc=80deg.C(+600KHz)
Tc=80deg.C(-900KHz)
Tc=80deg.C(+900KHz)
Tc=25deg.C(-600KHz)
Tc=25deg.C(+600KHz)
Tc=25deg.C(-900KHz)
Tc=25deg.C(+900KHz)
Tc=-20deg.C(-600KHz)
Tc=-20deg.C(+600KHz)
Tc=-20deg.C(-900KHz)
Tc=-20deg.C(+900KHz)

-65

-70

-75

-80

-5 0 5 10 15 20 25

Pin(dBm)

ACLR v.s. Po VD=10V Freq.=1.9GHz

Tc=25deg.C

-30

-35

-40

-45

-50

IDQ=0.5A(-600KHz)
IDQ=0.5A(+600KHz)
IDQ=0.5A(-900KHz)
IDQ=0.5A(+900KHz)
IDQ=0.4A(-600KHz)
IDQ=0.4A(+600KHz)
IDQ=0.4A(-900KHz)
IDQ=0.4A(+900KHz)

-55

-60

ACLR(dBc)

-65

-70

-75

-80

-5 0 5 10 15 20 25

Pin(dBm)

IM3,IM5 v.s. Po VD=10V,IDQ=0.5A

Tc=25deg.C

-20

-25

-30

-35

IM3 Low

IM3 High

IM5 Low

IM5 High

f1=1.90GHz
f2=1.91GHz

-40

-45

IM3,IM5(dBc)

-50

-55

-60

-65
10 15 20 25 30 35

Po(S.C.L.)(dBc)

ACLR v.s. Po IDQ=0.5A

Freq.=1.9GHz Tc=25deg.C

-30

-35

-40

-45

-50

VD=10V(-900KHz)
VD=10V(+900KHz)
VD=10V(-900KHz)
VD=10V(+900KHz)
VD=9V(-600KHz)
VD=9V(+600KHz)
VD=9V(-900KHz)
VD=9V(+900KHz)

-55

-60

ACLR(dBc)

-65

-70

-75

-80

-5 0 5 10 15 20 25

Pin(dBm)

Apr. 2005

MGF0921A RF TEST DATA for Freq.=1.85-1.95GHz BAND

HIGH FREQUENCY & OPTICAL DEVICE WORKS

MITSIBISHI ELECTRIC CORPORATION ( 4/4 )