MITSUBISHI MGF0921A User Manual
< High-power GaAs FET (small signal gain stage) >
MGF0921A
L & S BAND / 2W
SMD non - matched
DESCRIPTION
The MGF0921A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=33dBm(TYP.) @f=1.9GHz,Pin=17dBm
High power gain
Gp=17dB(TYP.) @f=1.9GHz
High power added efficiency
add=40%(TYP.) @f=1.9GHz,Pin=17dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=500mA Rg=200
Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGSO
VGDO Gate to drain breakdown voltage -15 V
ID Drain current 1800 mA
IGR Reverse gate current -5.0 mA
IGF Forward gate current 15 mA
PT Total power dissipation 10 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
Gate to source
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
I
DSS
V
GS(off)
gm
Po
add
GLP
Rth(ch-c)
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Thermal Resistance *1
breakdown voltage
(Ta=25C)
-15 V
VDS=3V,VGS=0V - 1100 1800 mA
VDS=3V,ID=4.0mA -1.0 - -5.0 V
VDS=3V,ID=500mA - 370 - mS
VDS=10V,ID=500mA,f=1.9GHz 31 33 - dBm
Pin=17dBm - 38 - %
VDS=10V,ID=500mA,f=1.9GHz 15 17 - dB
Vf Method - 11 15 C/W
Fig.1
Min. Typ. Max.
*1:
Channel to case / Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0921A
L & S BAND / 2W
SMD non - matched
MGF09121A TYPICAL CHARACTERISTICS
Publication Date : Apr., 2011
2
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