MITSUBISHI MGF0920A User Manual
< High-power GaAs FET (small signal gain stage) >
MGF0920A
L & S BAND / 1.6W
SMD non - matched
DESCRIPTION
The MGF0920A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=32dBm(TYP.) @f=1.9GHz,Pin=15dBm
High power gain
Gp=18dB(TYP.) @f=1.9GHz
High power added efficiency
add=45%(TYP.) @f=1.9GHz,Pin=15dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=400mA Rg=200
Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGSO
VGDO Gate to drain breakdown voltage -15 V
ID Drain current 1500 mA
IGR Reverse gate current -3.6 mA
IGF Forward gate current 15 mA
PT Total power dissipation 8.3 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
Gate to source
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
I
DSS
V
GS(off)
gm
Po
add
GLP
Rth(ch-c)
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Thermal Resistance *1
breakdown voltage
(Ta=25C)
-15 V
VDS=3V,VGS=0V - 1000 1500 mA
VDS=3V,ID=3.0mA -1.0 - -5.0 V
VDS=3V,ID=400mA - 370 - mS
VDS=10V,ID=400mA,f=1.9GHz 30 32 - dBm
Pin=15dBm - 35 - %
VDS=10V,ID=400mA,f=1.9GHz 16 18 - dB
Vf Method - 13 18 C/W
Fig.1
Min. Typ. Max.
*1:
Channel to case / Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0920A
L & S BAND / 1.6W
SMD non - matched
MGF09120A TYPICAL CHARACTERISTICS
Po,Gp ,PAE vs.P i
35
Vds=10V
Id(off)=400mA
30
f=1.9GHz
25
20
Po(dBm)
15
10
5
0
-10 -5 0 5 10 15 20
Po
PAE
Gp
Pin (dBm)
70
60
50
40
30
Gp(dB),PAE(%)
20
10
0
40
35
30
25
VD=10V
ID=400mA
f1=1.90GHz
f2=1.91GHz
20
15
10
5
Po(SCL)(dBm)
0
-5
-10
-15 -10 -5 0 5 10 15 20
Pi(SCL) vs. Po(SCL ) , IM3
Po
IM3
Pin(SCL)(dBm)
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
IM3(dBc)
Publication Date : Apr., 2011
2
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