MITSUBISHI MGF0920A User Manual

< High-power GaAs FET (small signal gain stage) >

MGF0920A

L & S BAND / 1.6W
SMD non - matched

DESCRIPTION

The MGF0920A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.

FEATURES

 High output power
Po=32dBm(TYP.) @f=1.9GHz,Pin=15dBm
 High power gain
Gp=18dB(TYP.) @f=1.9GHz
 High power added efficiency
add=45%(TYP.) @f=1.9GHz,Pin=15dBm
 Hermetic Package

APPLICATION

 For UHF Band power amplifiers

QUALITY

 GG

RECOMMENDED BIAS CONDITIONS

 Vds=10V  Ids=400mA  Rg=200

Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGSO
VGDO Gate to drain breakdown voltage -15 V
ID Drain current 1500 mA
IGR Reverse gate current -3.6 mA
IGF Forward gate current 15 mA
PT Total power dissipation 8.3 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

Gate to source

Electrical characteristics

Symbol Parameter Test conditions Limits Unit

I

DSS

V

GS(off)

gm
Po

add
GLP
Rth(ch-c)

Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power

Power added Efficiency
Linear Power Gain
Thermal Resistance *1

breakdown voltage

(Ta=25C)

-15 V

VDS=3V,VGS=0V - 1000 1500 mA
VDS=3V,ID=3.0mA -1.0 - -5.0 V
VDS=3V,ID=400mA - 370 - mS
VDS=10V,ID=400mA,f=1.9GHz 30 32 - dBm

Pin=15dBm - 35 - %
VDS=10V,ID=400mA,f=1.9GHz 16 18 - dB
Vf Method - 13 18 C/W

Fig.1

Min. Typ. Max.

*1:

Channel to case / Above parameters, ratings, limits are subject to change.

Publication Date : Apr., 2011

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< High-power GaAs FET (small signal gain stage) >

MGF0920A

L & S BAND / 1.6W
SMD non - matched

MGF09120A TYPICAL CHARACTERISTICS

Po,Gp ,PAE vs.P i

35

Vds=10V
Id(off)=400mA

30

f=1.9GHz

25

20

Po(dBm)

15

10

5

0

-10 -5 0 5 10 15 20

Po

PAE

Gp

Pin (dBm)

70

60

50

40

30

Gp(dB),PAE(%)

20

10

0

40
35
30
25

VD=10V
ID=400mA
f1=1.90GHz
f2=1.91GHz

20
15
10

5

Po(SCL)(dBm)

0

-5

-10

-15 -10 -5 0 5 10 15 20

Pi(SCL) vs. Po(SCL ) , IM3

Po

IM3

Pin(SCL)(dBm)

30
20
10
0

-10

-20

-30

-40

-50

-60

-70

IM3(dBc)

Publication Date : Apr., 2011

2

< High-power GaAs FET (small signal gain stage) >

MGF0920A

L & S BAND / 1.6W
SMD non - matched

MGF0920A S PARAMETERS (Ta=25C,VD=10V,ID=400mA, Reference Plane see Fig.1)

freq. K MAG/MSG

(MHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) (dB)

600 0.930 -96.03 7.784 119.71 0.019 39.54 0.367 -155.36 0.25 26.12
1000 0.912 -124.52 5.692 100.24 0.023 26.68 0.427 -155.22 0.32 23.94
1400 0.903 -140.36 4.233 85.39 0.024 17.80 0.476 -154.99 0.42 22.46
1800 0.899 -149.63 3.242 73.85 0.024 12.03 0.516 -154.82 0.54 21.31
2200 0.899 -155.96 2.584 64.56 0.022 8.64 0.552 -154.81 0.75 20.70
2600 0.900 -161.19 2.156 56.76 0.021 7.04 0.583 -155.02 0.91 20.11
3000 0.901 -165.84 1.879 49.88 0.020 6.70 0.612 -155.50 1.06 18.23
3400 0.901 -169.78 1.696 43.51 0.019 7.24 0.638 -156.24 1.20 16.82
3800 0.900 -172.74 1.565 37.40 0.019 8.31 0.662 -157.24 1.24 16.23
4200 0.897 -174.91 1.462 31.40 0.020 9.66 0.684 -158.46 1.20 15.95
4600 0.893 -177.52 1.370 25.42 0.021 11.07 0.703 -159.84 1.19 15.54
5000 0.887 178.90 1.283 19.44 0.023 12.38 0.718 -161.35 1.15 15.13
5400 0.880 176.64 1.199 13.46 0.025 13.47 0.730 -162.91 1.15 14.48
5800 0.871 172.31 1.121 7.49 0.028 14.22 0.738 -164.48 1.14 13.73
6200 0.861 167.25 1.054 1.52 0.031 14.56 0.742 -166.00 1.18 12.76
6600 0.849 162.24 1.003 -4.44 0.034 14.40 0.744 -167.44 1.24 11.78
7000 0.836 157.65 0.971 -10.45 0.039 13.69 0.743 -168.79 1.20 11.27
7400 0.822 153.50 0.963 -16.57 0.044 12.36 0.739 -170.03 1.16 10.94
7800 0.805 149.52 0.978 -22.92 0.050 10.31 0.734 -171.21 1.10 10.98
8200 0.785 145.30 1.016 -29.63 0.058 7.49 0.728 -172.37 0.99 12.43
8600 0.761 140.29 1.071 -36.87 0.067 3.78 0.720 -173.62 0.90 12.04
9000 0.730 133.94 1.139 -44.85 0.078 -0.92 0.712 -175.10 0.82 11.64
9400 0.690 125.77 1.212 -53.74 0.093 -6.73 0.703 -176.99 0.75 11.15
9800 0.638 115.44 1.282 -63.76 0.110 -13.79 0.690 -179.52 0.74 10.66

10200 0.588 102.87 1.344 -75.07 0.131 -22.25 0.671 176.62 0.73 10.11
10600 0.547 88.25 1.393 -87.81 0.156 -32.28 0.644 172.09 0.72 9.51
11000 0.534 72.23 1.431 -102.03 0.186 -44.04 0.601 167.44 0.70 8.86
11400 0.562 55.90 1.464 -117.69 0.221 -57.73 0.537 162.49 0.66 8.21
11800 0.641 40.93 1.509 -134.63 0.260 -73.53 0.440 158.74 0.61 7.64
12200 0.770 29.66 1.597 -152.53 0.305 -91.61 0.300 165.54 0.58 7.19

Gate Mark
Round corner

S11 S21 S12 S22

2.0

0.8

(1)

(1)

0.80

Gate Mark

(2)

4.00

0.3

Fig. 1 O UTLIN E DRAW IN G

Publication Date : Apr., 2011

Reference Plane

4.20

0.25

(1) Gate

(3)

(2)

0.6

2.5

BACK SIDE PATTERN

Reference Plane

2.8

1.20

(2) Drain
(3) Source

(Unit:mm)

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< High-power GaAs FET (small signal gain stage) >

MGF0920A

L & S BAND / 1.6W
SMD non - matched

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Publication Date : Apr., 2011

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