MITSUBISHI MGF0919A User Manual
查询MGF0919A供应商
L & S BAND GaAs FET [ SMD non – matched ]
DESCRIPTION
The MGF0919A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power
Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
• High power gain
Gp=19dB(TYP.) @f=1.9GHz
• High power added efficiency
ηadd=37%(TYP.) @f=1.9GHz,Pin=12dBm
• Hermetic Package
APPLICATION
• For UHF Band power amplifiers
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=300mA • Rg=500Ω
Delivery -01: Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25°C)
Symbol
VGSO
VGDO
ID Drain current 800 mA
IGR Reverse gate current -2.4 mA
IGF Forward gate current 10 mA
PT Total power dissipation 6 W
Tch Cannel temperature 175 °C
Tstg Storage temperature -65 to +175 °C
Gate to source
Gate to drain breakdown voltage -15 V
Parameter Ratings Unit
breakdown voltage -15 V
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0919A
Fig.1
Electrical characteristics
Symbol
IDSS
VGS(off)
gm
Transconductance VDS=3V,ID=300mA - 260 - mS
Po Output power VDS=10V,ID=300mA,f=1.9GHz 28 30 - dBm
ηadd Power added Efficiency Pin=12dBm - 37 - %
GLP Linear Power Gain VDS=10V,ID=300mA,f=1.9GHz 17 19 - dB
NF Noise figure - 1.2 - dB
Rth(ch-c)
Min. Typ. Max.
Saturated drain current VDS=3V,V GS=0V - 600 800 mA
Gate to source cut-off voltage VDS=3V,ID=2.0mA -1.0 - -5.0 V
Thermal Resistance *1 ∆Vf Method - 17 25 °C/W
Parameter Test conditions Limits Unit
(Ta=25°C)
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Mitsubishi Electric June/2004
MGF0919A TYPICAL CHARACTERISTICS
VD=10V
Po,Gp,PAE vs.Pin
35
Vds=10V
Id(off)=300mA
f=1.9GHz
30
25
20
Po(dBm)
15
10
5
0
-10 -5 0 5 10 15
Po
PAE
Gp
70
60
50
40
30
Gp(dBm)PAE(%)
20
10
0
Pin(dBm)
Pi(SCL) vs.Po(SCL),IM3
40
35
ID=300mA
30
25
f1=1.90GHz
f2=1.91Ghz
Po
20
15
10
5
Po(SCL)(dBm)
IM3
0
-5
-10
-15 -10 -5 0 5 10 15 20
Pin(SCL)(dBm)
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
IM3(dBc)
Mitsubishi Electric June/2004
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