
查询MGF0919A供应商
L & S BAND GaAs FET [ SMD non – matched ]
DESCRIPTION
The MGF0919A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
• High output power
Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm
• High power gain
Gp=19dB(TYP.) @f=1.9GHz
• High power added efficiency
ηadd=37%(TYP.) @f=1.9GHz,Pin=12dBm
• Hermetic Package
APPLICATION
• For UHF Band power amplifiers
QUALITY
• GG
RECOMMENDED BIAS CONDITIONS
• Vds=10V • Ids=300mA • Rg=500Ω
Delivery -01: Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25°C)
Symbol
VGSO
VGDO
ID Drain current 800 mA
IGR Reverse gate current -2.4 mA
IGF Forward gate current 10 mA
PT Total power dissipation 6 W
Tch Cannel temperature 175 °C
Tstg Storage temperature -65 to +175 °C
Gate to source
Gate to drain breakdown voltage -15 V
Parameter Ratings Unit
breakdown voltage -15 V
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0919A
Fig.1
Electrical characteristics
Symbol
IDSS
VGS(off)
gm
Transconductance VDS=3V,ID=300mA - 260 - mS
Po Output power VDS=10V,ID=300mA,f=1.9GHz 28 30 - dBm
ηadd Power added Efficiency Pin=12dBm - 37 - %
GLP Linear Power Gain VDS=10V,ID=300mA,f=1.9GHz 17 19 - dB
NF Noise figure - 1.2 - dB
Rth(ch-c)
Min. Typ. Max.
Saturated drain current VDS=3V,V GS=0V - 600 800 mA
Gate to source cut-off voltage VDS=3V,ID=2.0mA -1.0 - -5.0 V
Thermal Resistance *1 ∆Vf Method - 17 25 °C/W
Parameter Test conditions Limits Unit
(Ta=25°C)
*1:Channel to case / Above parameters, ratings, limits are subject to change.
Mitsubishi Electric June/2004

MGF0919A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin
35
Vds=10V
Id(off)=300mA
f=1.9GHz
30
25
20
Po(dBm)
15
10
5
0
-10 -5 0 5 10 15
Po
PAE
Gp
70
60
50
40
30
Gp(dBm)PAE(%)
20
10
0
Pin(dBm)
Pi(SCL) vs.Po(SCL),IM3
40
35
ID=300mA
30
25
f1=1.90GHz
f2=1.91Ghz
Po
20
15
10
5
Po(SCL)(dBm)
IM3
0
-5
-10
-15 -10 -5 0 5 10 15 20
Pin(SCL)(dBm)
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
IM3(dBc)
Mitsubishi Electric June/2004

MGF0919A S PARAMETERS
(Ta=25°C,VD=10V,ID=300mA, Reference Plane see Fig.1)
Gate Mark
Round corner
(1)
(2)
4.00
0.80
Gate Mark
(3)
BACK SIDE PATTERN
0.3
4.20
0.25
(1) Gate
(2) Drain
(3) Source
Fig.1 OUTLINE DRAWING
(Unit:mm)
2.0
0.8
2.5
(1)
(2)
0.6
Reference Plane
2.8
1.20
Reference Plane
Mitsubishi Electric June/2004

MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0919A
L & S BAND GaAs FET [ SMD non – matched ]
Requests Regarding Safety Designs
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highest levels of safety in the products when in use by customers.
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Mitsubishi Electric June/2004