MITSUBISHI MGF0918A User Manual

< High-power GaAs FET (small signal gain stage) >

MGF0918A

L & S BAND / 0.5W
SMD non - matched

DESCRIPTION

The MGF0918A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.

FEATURES

 High output power
Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm
 High power gain
Gp=20dB(TYP.) @f=1.9GHz
 High power added efficiency
add=45%(TYP.) @f=1.9GHz,Pin=8dBm
 Hermetic Package

APPLICATION

 For UHF Band power amplifiers

QUALITY

 GG

RECOMMENDED BIAS CONDITIONS

 Vds=10V  Ids=150mA  Rg=1k

Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)

Absolute maximum ratings (Ta=25C)

Symbol Parameter Ratings Unit

VGSO
VGDO Gate to drain breakdown voltage -15 V
ID Drain current 400 mA
IGR Reverse gate current -1.2 mA
IGF Forward gate current 5.0 mA
PT Total power dissipation 3 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C

Gate to source

Electrical characteristics

Symbol Parameter Test conditions Limits Unit

I

DSS

V

GS(off)

gm
Po

add
GLP
NF
Rth(ch-c)

Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power

Power added Efficiency
Linear Power Gain
Noise figure
Thermal Resistance *1

breakdown voltage

(Ta=25C)

-15 V

VDS=3V,VGS=0V - 300 400 mA
VDS=3V,ID=1.0mA -1.0 - -5.0 V
VDS=3V,ID=150mA - 130 - mS
VDS=10V,ID=150mA,f=1.9GHz 25 27 - dBm

Pin=8dBm - 35 - %
VDS=10V,ID=150mA,f=1.9GHz

Vf Method - 35 50 C/W

Fig.1

Min. Typ. Max.

18 20 - dB

- 1.0 - dB

*1:

Channel to case / Above parameters, ratings, limits are subject to change.

Publication Date : Apr., 2011

1

< High-power GaAs FET (small signal gain stage) >

MGF0918A

L & S BAND / 0.5W
SMD non - matched

MGF0918A TYPICAL CHARACTERISTICS

Po,Gp,PAE vs.Pin

35

Vds=10V
Id(off)=150mA

30

f=1.9GHz

25

Po

70

60

50

20

PAE

40

Po(dBm)

15

Gp

10

30

Gp(dB),PAE(%)

20

5

10

0

-10 -5 0 5 10 15

0

Pin(dBm)

P i(SC L) v s .Po (SCL ),IM 3

30
25
20
15
10

Po(SCL)(dBm)

-1 0

-1 5

-2 0

VD=10V
ID= 150 mA
f1=1 .90G Hz
f2=1 .91G Hz

5
0

-5

-20 -15 -10 -5 0 5 10 1 5

Po

IM3

Pin(SCL)(dBm)

30
20
10
0

-10

-20

-30

-40

-50

-60

-70

IM3(dBc)

Publication Date : Apr., 2011

2