< High-power GaAs FET (small signal gain stage) >
MGF0918A
L & S BAND / 0.5W
SMD non - matched
DESCRIPTION
The MGF0918A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm
High power gain
Gp=20dB(TYP.) @f=1.9GHz
High power added efficiency
add=45%(TYP.) @f=1.9GHz,Pin=8dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=150mA Rg=1k
Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGSO
VGDO Gate to drain breakdown voltage -15 V
ID Drain current 400 mA
IGR Reverse gate current -1.2 mA
IGF Forward gate current 5.0 mA
PT Total power dissipation 3 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
Gate to source
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
I
DSS
V
GS(off)
gm
Po
add
GLP
NF
Rth(ch-c)
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Noise figure
Thermal Resistance *1
breakdown voltage
(Ta=25C)
-15 V
VDS=3V,VGS=0V - 300 400 mA
VDS=3V,ID=1.0mA -1.0 - -5.0 V
VDS=3V,ID=150mA - 130 - mS
VDS=10V,ID=150mA,f=1.9GHz 25 27 - dBm
Pin=8dBm - 35 - %
VDS=10V,ID=150mA,f=1.9GHz
Vf Method - 35 50 C/W
Fig.1
Min. Typ. Max.
18 20 - dB
- 1.0 - dB
*1:
Channel to case / Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0918A
L & S BAND / 0.5W
SMD non - matched
MGF0918A TYPICAL CHARACTERISTICS
Po,Gp,PAE vs.Pin
35
Vds=10V
Id(off)=150mA
30
f=1.9GHz
25
Po
70
60
50
20
PAE
40
Po(dBm)
15
Gp
10
30
Gp(dB),PAE(%)
20
5
10
0
-10 -5 0 5 10 15
0
Pin(dBm)
P i(SC L) v s .Po (SCL ),IM 3
30
25
20
15
10
Po(SCL)(dBm)
-1 0
-1 5
-2 0
VD=10V
ID= 150 mA
f1=1 .90G Hz
f2=1 .91G Hz
5
0
-5
-20 -15 -10 -5 0 5 10 1 5
Po
IM3
Pin(SCL)(dBm)
30
20
10
0
-10
-20
-30
-40
-50
-60
-70
IM3(dBc)
Publication Date : Apr., 2011
2
< High-power GaAs FET (small signal gain stage) >
MGF0918A
L & S BAND / 0.5W
SMD non - matched
MGF0918A S PARAMETERS (Ta=25C,VD=10V,ID=150mA, Reference Plane see Fig.1)
freq. K MAG/MSG
(MHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) (dB)
600 0.966 -47.70 6.220 142.02 0.015 56.75 0.302 -56.49 0.21 26.18
1000 0.939 -72.11 5.269 120.98 0.021 41.10 0.360 -78.28 0.29 24.00
1400 0.919 -90.91 4.470 103.95 0.024 27.49 0.426 -94.16 0.36 22.70
1800 0.905 -105.49 3.805 89.91 0.026 15.71 0.492 -105.68 0.42 21.65
2200 0.897 -116.96 3.257 78.05 0.026 5.60 0.553 -114.07 0.49 20.98
2600 0.892 -126.16 2.811 67.78 0.025 -3.00 0.606 -120.27 0.60 20.51
3000 0.890 -133.71 2.453 58.64 0.024 -10.20 0.651 -125.02 0.70 20.09
3400 0.889 -140.07 2.168 50.31 0.024 -16.12 0.687 -128.82 0.76 19.56
3800 0.888 -145.57 1.946 42.56 0.023 -20.89 0.716 -132.05 0.86 19.27
4200 0.886 -150.45 1.775 35.21 0.023 -24.64 0.738 -134.94 0.93 18.87
4600 0.883 -154.92 1.647 28.16 0.022 -27.52 0.754 -137.64 1.07 17.15
5000 0.877 -159.19 1.553 21.31 0.023 -29.72 0.768 -140.24 1.10 16.35
5400 0.868 -163.52 1.489 14.56 0.024 -31.42 0.779 -142.75 1.15 15.58
5800 0.856 -168.29 1.448 7.83 0.025 -32.85 0.788 -145.19 1.20 14.90
6200 0.840 -173.99 1.427 1.01 0.027 -34.23 0.797 -147.53 1.20 14.51
6600 0.820 177.60 1.423 -6.02 0.029 -35.84 0.806 -149.77 1.18 14.33
7000 0.797 172.89 1.433 -13.41 0.031 -37.92 0.814 -151.90 1.21 13.88
7400 0.771 162.95 1.457 -21.33 0.035 -40.74 0.820 -153.92 1.12 14.06
7800 0.743 154.14 1.491 -29.97 0.038 -44.55 0.824 -155.84 1.12 13.86
8200 0.713 146.69 1.536 -39.52 0.042 -49.58 0.824 -157.68 1.13 13.40
8600 0.674 137.66 1.587 -50.18 0.047 -56.03 0.818 -159.47 1.19 12.62
9000 0.618 123.53 1.643 -62.15 0.053 -64.03 0.806 -161.21 1.27 11.77
9400 0.545 102.00 1.699 -75.56 0.058 -73.66 0.786 -162.88 1.40 10.90
9800 0.485 73.05 1.748 -90.54 0.064 -84.89 0.759 -164.44 1.47 10.32
10200 0.475 39.23 1.782 -107.10 0.071 -97.58 0.723 -165.75 1.45 10.00
10600 0.535 5.13 1.788 -125.18 0.077 -111.47 0.678 -166.62 1.38 10.00
11000 0.640 -23.88 1.753 -144.56 0.082 -126.11 0.636 -166.73 1.22 10.44
11400 0.730 -43.68 1.656 -164.88 0.086 -140.87 0.609 -165.59 1.15 10.47
11800 0.813 -54.21 1.473 177.63 0.088 -154.90 0.607 -162.55 1.14 9.96
12200 0.876 -63.08 1.176 160.67 0.087 -167.09 0.636 -156.74 1.19 8.65
Gate Mark
Round corner
S11 S21 S12 S22
2.0
0.8
(1)
(1)
0.80
Gate Mark
(2)
4.00
0.3
Fig.1 OUTLINE DR AWING
Publication Date : Apr., 2011
Reference Plane
4.20
0.25
(1) Gate
(3)
(2)
0.6
2.5
BACK SIDE PATTERN
Reference Plane
2.8
1.20
(2) Drain
(3) Source
(Unit:mm)
3
< High-power GaAs FET (small signal gain stage) >
MGF0918A
L & S BAND / 0.5W
SMD non - matched
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Publication Date : Apr., 2011
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