< High-power GaAs FET (small signal gain stage) >
MGF0917A
L & S BAND / 0.25W
SMD non - matched
DESCRIPTION
The MGF0917A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm
High power gain
Gp=21dB(TYP.) @f=1.9GHz
High power added efficiency
add=38%(TYP.) @f=1.9GHz,Pin=4dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=75mA Rg=2k
Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGSO
VGDO Gate to drain breakdown voltage -15 V
ID Drain current 200 mA
IGR Reverse gate current -0.6 mA
IGF Forward gate current 2.5 mA
PT Total power dissipation 2 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
Gate to source
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
I
DSS
V
GS(off)
gm
Po
add
GLP
NF
Rth(ch-c)
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Noise figure
Thermal Resistance *1
breakdown voltage
(Ta=25C)
-15 V
VDS=3V,VGS=0V - 150 200 mA
VDS=3V,ID=0.5mA -1.0 - -5.0 V
VDS=3V,ID=75mA - 70 - mS
VDS=10V,ID=75mA,f=1.9GHz 23 24 - dBm
Pin=4dBm - 38 - %
VDS=10V,ID=75mA,f=1.9GHz
Vf Method - 55 75 C/W
Fig.1
Min. Typ. Max.
- 21 - dB
- 0.9 - dB
*1:
Channel to case / Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0917A
L & S BAND / 0.25W
SMD non - matched
MGF0917A TYPICAL CHARACTERISTICS
30
Vds=10V
Id(off)=75mA
f=1.9GHz
25
20
15
Po(dBm)
10
5
0
-15 -10 -5 0 5 10
Po,Gp,PAE vs.Pin
Po
Gp
Pin(dBm)
PAE
60
50
40
30
Gp(dB),PAE(%)
20
10
0
30
VD=10V
25
ID=75mA
20
f1=1.90GHz
f2=1.91GHz
15
10
5
0
-5
Po(SCL)(dBm)
-10
-15
-20
-20 -1 5 -10 -5 0 5 10 15
Pi(SCL) vs.Po (S CL),IM3
Po
IM3
Pin(SCL)(dBm)
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
IM3(dBc)
Publication Date : Apr., 2011
2
< High-power GaAs FET (small signal gain stage) >
MGF0917A
L & S BAND / 0.25W
SMD non - matched
MGF0917A S PARAMETERS (Ta=25C,VD=10V,ID=75mA, Reference Plane see Fig.1)
freq. K MAG/MSG
(MHz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) (dB)
600 0.981 -33.12 4.043 146.73 0.013 60.97 0.542 -37.01 0.21 24.93
1000 0.963 -52.23 3.628 130.91 0.017 47.27 0.574 -55.99 0.27 23.29
1400 0.950 -67.81 3.204 115.76 0.020 33.78 0.613 -71.29 0.32 22.05
1800 0.940 -80.66 2.813 101.60 0.023 20.83 0.654 -84.14 0.37 20.87
2200 0.933 -91.42 2.480 88.63 0.025 8.72 0.694 -95.18 0.42 19.97
2600 0.928 -100.60 2.190 76.98 0.026 -2.30 0.732 -104.65 0.48 19.25
3000 0.925 -108.60 1.944 66.64 0.026 -12.04 0.765 -112.60 0.55 18.74
3400 0.922 -115.73 1.755 57.57 0.026 -20.38 0.793 -119.01 0.61 18.29
3800 0.920 -122.21 1.598 49.63 0.025 -27.27 0.816 -123.90 0.68 18.06
4200 0.919 -128.21 1.473 42.64 0.024 -32.78 0.834 -127.39 0.75 17.88
4600 0.917 -133.86 1.381 36.36 0.023 -37.04 0.848 -129.77 0.81 17.78
5000 0.915 -139.27 1.314 30.53 0.023 -40.28 0.859 -131.44 0.84 17.57
5400 0.911 -144.52 1.270 24.85 0.023 -42.81 0.867 -132.90 0.88 17.42
5800 0.905 -149.72 1.251 19.04 0.025 -44.98 0.874 -134.71 0.86 16.99
6200 0.895 -155.02 1.250 12.78 0.028 -47.24 0.880 -137.32 0.82 16.50
6600 0.881 -160.60 1.268 5.79 0.032 -50.03 0.885 -140.94 0.79 15.98
7000 0.860 -166.70 1.310 -2.21 0.037 -53.82 0.891 -145.42 0.76 15.49
7400 0.830 -173.68 1.366 -11.46 0.043 -59.06 0.895 -149.92 0.77 15.02
7800 0.789 179.59 1.451 -22.14 0.049 -66.14 0.897 -152.77 0.85 14.71
8200 0.734 165.49 1.557 -34.40 0.055 -75.38 0.895 -155.52 0.90 14.52
8600 0.662 149.83 1.670 -48.32 0.061 -86.96 0.884 -157.78 1.01 13.81
9000 0.581 121.51 1.779 -63.88 0.066 -100.89 0.863 -158.81 1.08 12.54
9400 0.521 81.43 1.864 -80.99 0.070 -116.97 0.837 -158.40 1.13 12.10
9800 0.525 36.33 1.872 -99.47 0.072 -134.73 0.802 -156.85 1.20 11.48
10200 0.622 -5.95 1.760 -119.01 0.072 -153.36 0.774 -154.83 1.21 11.11
10600 0.734 -39.56 1.553 -139.19 0.070 -171.68 0.759 -153.13 1.22 10.65
11000 0.820 -62.30 1.319 -159.45 0.066 174.68 0.758 -152.41 1.24 10.03
11400 0.876 -75.69 1.104 -179.08 0.060 163.25 0.766 -153.06 1.32 9.25
11800 0.905 -83.49 0.928 170.48 0.054 153.93 0.778 -154.90 1.39 8.64
12200 0.920 -88.74 0.785 158.33 0.047 146.49 0.792 -157.02 1.51 8.01
Gate Mark
Round corner
S11 S21 S12 S22
2.0
0.8
(1)
(1)
0.80
Gate Mark
(2)
4.00
0.3
Fig . 1 OUTLINE DRAWIN G
Publication Date : Apr., 2011
Reference Plane
4.20
0.25
(1) Gate
(3)
(2)
0.6
2.5
BACK SIDE PATTERN
Reference Plane
2.8
1.20
(2) Drain
(3) Source
(Unit:mm)
3
< High-power GaAs FET (small signal gain stage) >
MGF0917A
L & S BAND / 0.25W
SMD non - matched
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Publication Date : Apr., 2011
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