MITSUBISHI MGF0917A User Manual
< High-power GaAs FET (small signal gain stage) >
MGF0917A
L & S BAND / 0.25W
SMD non - matched
DESCRIPTION
The MGF0917A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm
High power gain
Gp=21dB(TYP.) @f=1.9GHz
High power added efficiency
add=38%(TYP.) @f=1.9GHz,Pin=4dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=75mA Rg=2k
Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGSO
VGDO Gate to drain breakdown voltage -15 V
ID Drain current 200 mA
IGR Reverse gate current -0.6 mA
IGF Forward gate current 2.5 mA
PT Total power dissipation 2 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
Gate to source
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
I
DSS
V
GS(off)
gm
Po
add
GLP
NF
Rth(ch-c)
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Noise figure
Thermal Resistance *1
breakdown voltage
(Ta=25C)
-15 V
VDS=3V,VGS=0V - 150 200 mA
VDS=3V,ID=0.5mA -1.0 - -5.0 V
VDS=3V,ID=75mA - 70 - mS
VDS=10V,ID=75mA,f=1.9GHz 23 24 - dBm
Pin=4dBm - 38 - %
VDS=10V,ID=75mA,f=1.9GHz
Vf Method - 55 75 C/W
Fig.1
Min. Typ. Max.
- 21 - dB
- 0.9 - dB
*1:
Channel to case / Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0917A
L & S BAND / 0.25W
SMD non - matched
MGF0917A TYPICAL CHARACTERISTICS
30
Vds=10V
Id(off)=75mA
f=1.9GHz
25
20
15
Po(dBm)
10
5
0
-15 -10 -5 0 5 10
Po,Gp,PAE vs.Pin
Po
Gp
Pin(dBm)
PAE
60
50
40
30
Gp(dB),PAE(%)
20
10
0
30
VD=10V
25
ID=75mA
20
f1=1.90GHz
f2=1.91GHz
15
10
5
0
-5
Po(SCL)(dBm)
-10
-15
-20
-20 -1 5 -10 -5 0 5 10 15
Pi(SCL) vs.Po (S CL),IM3
Po
IM3
Pin(SCL)(dBm)
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
IM3(dBc)
Publication Date : Apr., 2011
2
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