MITSUBISHI MGF0916A User Manual
< High-power GaAs FET (small signal gain stage) >
MGF0916A
L & S BAND / 0.2W
SMD non - matched
DESCRIPTION
The MGF0916A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm
High power gain
Gp=19dB(TYP.) @f=1.9GHz
High power added efficiency
add=30%(TYP.) @f=1.9GHz,Pin=5dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=6V Ids=100mA Rg=1k
Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGSO
VGDO Gate to drain breakdown voltage -8 V
ID Drain current 250 mA
IGR Reverse gate current -0.6 mA
IGF Forward gate current 1.5 mA
PT Total power dissipation 1.5 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
Gate to source
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
I
DSS
V
GS(off)
gm
Po
add
GLP
NF
Rth(ch-c)
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Noise figure
Thermal Resistance *1
breakdown voltage
(Ta=25C)
-8 V
VDS=3V,VGS=0V 150 200 250 mA
VDS=3V,ID=0.1mA -1.5 - -4.5 V
VDS=3V,ID=100mA - 90 - mS
VDS=6V,ID=100mA,f=1.9GHz - 23 - dBm
Pin=5dBm - 30 - %
VDS=6V,ID=100mA,f=1.9GHz
Vf Method - 70 100 C/W
Fig.1
Min. Typ. Max.
- 19 - dB
- 1 - dB
*1:
Channel to case / Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0916A
L & S BAND / 0.2W
SMD non - matched
MGF0916A TYPICAL CHARACTERISTICS
26
24
22
20
VDS=6V
ID=0.1A
f=1.9GHz
18
16
Po(dBm)
14
Gp
12
10
8
6
-15 -10 -5 0 5 10 15
Po,Gp,PAE vs.Pin
Po
Pin(dBm)
PA E
50
45
40
35
30
25
20
15
10
5
0
Gp(dB),PAE(%)
30
20
10
-10
Po(SCL) (dBm)
-20
-30
-40
VD=6V
ID=100mA
f1=1.90GHz
f2=1.91GHz
0
-25 -20 -15 -10 -5 0 5 10
IM3,Po(SCL) vs. Pi(SCL)
Po
IM3
10
0
-10
-20
-30
-40
-50
-60
IM3 (dBc)
Pi(SCL) (dBm)
Publication Date : Apr., 2011
2
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