< High-power GaAs FET (small signal gain stage) >
MGF0916A
L & S BAND / 0.2W
SMD non - matched
DESCRIPTION
The MGF0916A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
High output power
Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm
High power gain
Gp=19dB(TYP.) @f=1.9GHz
High power added efficiency
add=30%(TYP.) @f=1.9GHz,Pin=5dBm
Hermetic Package
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=6V Ids=100mA Rg=1k
Delivery -01:Tape & Reel(1K), -03:Trai(50pcs)
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGSO
VGDO Gate to drain breakdown voltage -8 V
ID Drain current 250 mA
IGR Reverse gate current -0.6 mA
IGF Forward gate current 1.5 mA
PT Total power dissipation 1.5 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
Gate to source
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
I
DSS
V
GS(off)
gm
Po
add
GLP
NF
Rth(ch-c)
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power
Power added Efficiency
Linear Power Gain
Noise figure
Thermal Resistance *1
breakdown voltage
(Ta=25C)
-8 V
VDS=3V,VGS=0V 150 200 250 mA
VDS=3V,ID=0.1mA -1.5 - -4.5 V
VDS=3V,ID=100mA - 90 - mS
VDS=6V,ID=100mA,f=1.9GHz - 23 - dBm
Pin=5dBm - 30 - %
VDS=6V,ID=100mA,f=1.9GHz
Vf Method - 70 100 C/W
Fig.1
Min. Typ. Max.
- 19 - dB
- 1 - dB
*1:
Channel to case / Above parameters, ratings, limits are subject to change.
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0916A
L & S BAND / 0.2W
SMD non - matched
MGF0916A TYPICAL CHARACTERISTICS
26
24
22
20
VDS=6V
ID=0.1A
f=1.9GHz
18
16
Po(dBm)
14
Gp
12
10
8
6
-15 -10 -5 0 5 10 15
Po,Gp,PAE vs.Pin
Po
Pin(dBm)
PA E
50
45
40
35
30
25
20
15
10
5
0
Gp(dB),PAE(%)
30
20
10
-10
Po(SCL) (dBm)
-20
-30
-40
VD=6V
ID=100mA
f1=1.90GHz
f2=1.91GHz
0
-25 -20 -15 -10 -5 0 5 10
IM3,Po(SCL) vs. Pi(SCL)
Po
IM3
10
0
-10
-20
-30
-40
-50
-60
IM3 (dBc)
Pi(SCL) (dBm)
Publication Date : Apr., 2011
2
< High-power GaAs FET (small signal gain stage) >
)
)
7
5
8
9
6
7
7
3
8
5
5
7
6
6
7
5
7
2
MGF0916A
L & S BAND / 0.2W
SMD non - matched
MGF0916A S PARAMETERS (Ta=25C,VD=6V,ID=100mA, Reference Plane see Fig.1)
freq. K
(MHz) (mag) (ang) (mag
600 0.954 - 40.32 7.263 145.11 0.016 60.06 0.477 - 37.47 0.25 26.57
1000 0.915 -62.48 6.256 126.36 0.023 45.59 0.509 -57.48 0.32 24.35
1400 0.887 -80.56 5.395 110.17 0.027 32.76 0.543 -73.42 0.37 23.01
1800 0.866 -95.15 4.664 96.15 0.029 21.52 0.578 -86.07 0.44 22.06
2200 0.852 -106.84 4.047 83.93 0.030 11.83 0.613 - 96.10 0.51 21.30
2600 0.844 -116.18 3.529 73.20 0.030 3.59 0.646 -104.09 0.60 20.71
3000 0.829 -123.68 3.099 63.67 0.030 -3.30 0.679 -110.51 0.72 20.14
3400 0.822 -129.83 2.743 55.09 0.029 -8.97 0.708 -115.77 0.84 19.76
3800 0.813 -135.06 2.452 47.23 0.029 -13.5
4200 0.806 -139.74 2.215 39.92 0.028 -17.24 0.760 -124.02 1.05 17.60
4600 0.802 -144.18 2.025 32.99 0.028 -20.1
5000 0.792 -148.63 1.874 26.30 0.028 -22.4
5400 0.779 -153.25 1.755 19.72 0.029 -24.3
5800 0.763 -158.12 1.661 13.18 0.030 -26.0
6200 0.741 -163.24 1.589 6.57 0.031 -27.6
6600 0.714 -168.50 1.533 -0.16 0.0 33 -29.3
7000 0.688 -173.69 1.490 -7.07 0.0 36 -31.3
7400 0.660 -178.49 1.457 -14.20 0.038 -33.6
7800 0.628 176.97 1.430 -21.60 0.041 -36.5
8200 0.590 172.29 1.409 -29.29 0.044 -40.0
8600 0.540 167.52 1.391 -37.32 0.047 -44.2
9000 0.477 162.13 1.374 -45.70 0.050 -49.2
9400 0.400 155.63 1.358 -54.48 0.054 -55.0
9800 0.311 146.74 1.342 -63.70 0.057 -61.6
10200 0.217 133.83 1 .325 -73.41 0.061 -69.0
10600 0.126 110.51 1 .306 -83.66 0.065 -77.14 0.880 -160.83 1.39 9.31
11000 0.073 51.9
11400 0.113 -5.75 1.262 -106.08 0.075 -94.9
11800 0.188 -27.30 1.236 -11 8.45 0.081 -104.26 0.836 -169.37 1.36 8.26
12200 0.260 -36.27 1.206 -13 1.74 0.088 -113.56 0.806 -174.68 1.42 7.52
Gate Mark
Round corner
S11S21S12S22
(ang)(mag)(ang)(mag)(ang) (dB
0.736 -120.19 0.93 19.27
0.782 -127.46 1.09 16.73
0.801 -130.64 1.16 15.86
0.817 -133.65 1.17 15.29
0.831 -136.55 1.19 14.78
0.843 -139.35 1.22 14.24
0.853 -142.06 1.23 13.79
0.861 -144.65 1.19 13.50
0.868 -147.09 1.21 13.08
0.874 -149.36 1.21 12.67
0.879 -151.43 1.23 12.17
0.883 -153.28 1.27 11.56
0.886 -154.93 1.33 10.94
0.888 -156.42 1.36 10.41
0.888 -157.81 1.40 9.95
0.886 -159.22 1.40 9.62
1.286 -94.52 0.070 -85.81 0.871 -162.85 1.36 9.08
0.857 -165.57 1.35 8.73
2.0
0.8
(1)
(1)
0.80
Gate Mark
MAG/MSG
(2)
4.00
Publication Date : Apr., 2011
4.20
0.25
0.3
(1) Gate
(2) Drain
(3) Source
Fig. 1 O UTLIN E DRAWIN G
(3)
(2)
0.6
2.5
BACK SIDE PATTERN
(Unit:mm)
3
Reference Plane
2.8
1.20
Reference Plane
< High-power GaAs FET (small signal gain stage) >
MGF0916A
L & S BAND / 0.2W
SMD non - matched
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Publication Date : Apr., 2011
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