MITSUBISHI
SUBJECT:
SUMMARY:
Evaluate conditions(In "
Apr. 2005
RF characteristics data of MGF0915A for Freq.=1.85-1.95GHz band
HIGH FREQUENCY & OPTICAL DEVICE WORKS
MITSIBISHI ELECTRIC CORPORATION (1/4 )
APPLICATION NOTE
This application note show the RF characteristics data of MGF0915.A
－ Sample history:
MGF0915A : Lot number "46G"
－
"part shown as follows, there is an evaluation result. )
ELECTRIC SEMICONDUCTOR
Date : 5th Apr. 2005
CW(1tone) Tc
0.8 0.64
VD 10 Tc=25deg.C +25 Freq.=1.9GHz
9 Freq.=1.9GHz +80
ACLR
VD 10 Tc=25deg.C
9 Freq.=1.9GHz
IMD
VD 10 Tc=25deg.C
9 Freq.=1.9GHz
Results
－
Page2-3 shows the RF characteristics data.
Page 4 shows the Equivalent Circuit.
IDQ
0.8 0.64
IDQ
0.8 0.64
-
-
-
--
-20 Vd=10V,IDQ=0.8A
CW
ACLRIDQ
Apr. 2005
MGF0915A RF TEST DATA for Freq.=1.85-1.95GHz BAND
HIGH FREQUENCY & OPTICAL DEVICE WORKS
MITSIBISHI ELECTRIC CORPORATION (2/4 )
Po,Id(RF) v.s. Pin Freq.=1.9GHz CW
(1tone) VD=10V,IDQ=0.8A
40
Tc=80deg.C(Po)
Tc=25deg.C(Po)
Tc=-20deg.C(Po)
Tc=80deg.C(Id(RF))
Tc=25deg.C(Id(RF))
Tc=-20deg.C(Id(RF))
35
2.3
1.8
Po,Id(RF) v.s. Pin Freq.=1.9GHz CW
(1tone) VD=10V,Tc=25deg.C
40
IDQ=0.8A(Po)
IDQ=0.64A(Po)
IDQ=0.8A(Id(RF))
IDQ=0.64A(Id(RF))
35
2.3
1.8
30
Po(dBm)
25
20
5 10 15 20 25 30
Pin(dBm)
Po v.s. Freq. CW (1tone)
VD=10V,IDQ=0.8A,Tc=25deg.C
40
35
30
25
Po(dBm)
20
15
1.3
0.8
0.3
Pin=12dBm
Pin=17dBm
Pin=22dBm
30
Id(RF)(A)
Po(dBm)
25
20
1.3
Id(RF)(A)
0.8
0.3
5 10 15 20 25 30
Pin(dBm)
Po,Id(RF) v.s. Pin Freq.=1.9GHz CW
(1tone) IDQ=0.8A,Tc=25deg.C
40
VD=10V(Po)
VD=9V(Po)
VD=10V(Id(RF))
VD=9V(Id(RF))
35
30
Po(dBm)
25
2.3
1.8
1.3
Id(RF)(A)
0.8
10
1.80 1.85 1.90 1.95 2.00
20
Freq.(GHz)
0.3
5 10 15 20 25 30
Pin(dBm)
ACP v.s. Po(PHS) ;
π
/4 DQPSK 1carrier Signal
Apr. 2005
MGF0915A RF TEST DATA for Freq.=1.85-1.95GHz BAND
HIGH FREQUENCY & OPTICAL DEVICE WORKS
MITSIBISHI ELECTRIC CORPORATION ( 3/4 )
ACLR v.s. Po VD=10V,IDQ=0.8A
Freq.=1.9GHz
Tc=80deg.C(-600KHz)
Tc=80deg.C(+600KHz)
Tc=80deg.C(-900KHz)
Tc=80deg.C(+900KHz)
Tc=25deg.C(-600KHz)
Tc=25deg.C(+600KHz)
Tc=25deg.C(-900KHz)
Tc=25deg.C(+900KHz)
Tc=-20deg.C(-600KHz)
Tc=-20deg.C(+600KHz)
Tc=-20deg.C(-900KHz)
Tc=-20deg.C(+900KHz)
ACP(dBc)
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
0 5 10 15 20 25 30
Pin(dBm)
IM3,IM5 v.s. Po VD=10V,IDQ=0.8A
Tc=25deg.C
-20
-25
-30
-35
IM3 Low
IM3 High
IM5 Low
IM5 High
f1=1.90GHz
f2=1.91GHz
-40
-45
IM3,IM5(dBc)
-50
-55
-60
-65
10 15 20 25 30 35
Po(S.C.L.)(dBc)
ACLR v.s. Po VD=10V Freq.=1.9GHz
Tc=25deg.C
-30
-35
-40
-45
-50
IDQ=0.8A(-600KHz)
IDQ=0.8A(+600KHz)
IDQ=0.8A(-900KHz)
IDQ=0.8A(+900KHz)
IDQ=0.64A(-600KHz)
IDQ=0.64A(+600KHz)
IDQ=0.64A(-900KHz)
IDQ=0.64A(+900KHz)
-55
-60
ACLR(dBc)
-65
-70
-75
-80
0 5 10 15 20 25 30
Pin(dBm)
ACLR v.s. Po IDQ=0.8A
Freq.=1.9GHz Tc=25deg.C
-30
-35
-40
-45
-50
VD=10V(-900KHz)
VD=10V(+900KHz)
VD=10V(-900KHz)
VD=10V(+900KHz)
VD=9V(-600KHz)
VD=9V(+600KHz)
VD=9V(-900KHz)
VD=9V(+900KHz)
-55
-60
ACLR(dBc)
-65
-70
-75
-80
0 5 10 15 20 25 30
Pin(dBm)
Apr. 2005
MGF0915A RF TEST DATA for Freq.=1.85-1.95GHz BAND
HIGH FREQUENCY & OPTICAL DEVICE WORKS
MITSIBISHI ELECTRIC CORPORATION ( 4/4 )
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