< High-power GaAs FET (small signal gain stage) >
MGF0912A
L & S BAND / 14W
non - matched
DESCRIPTION
The MGF0912A, GaAs FET with an N-channel schottky
gate, is designed for use in L/S band amplifiers.
FEATURES
High output power
Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm
High power gain
Gp=10.5dB(TYP.) @f=1.9GHz
High power added efficiency
P.A.E =38%(TYP.) @f=1.9GHz,Pin=33dBm
Hermetic Package
APPLICATION
For L/S Band power amplifiers
QUALITY
GG
Delivery
Tray
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=2.6A Rg=50
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO Gate to drain voltage -15 V
VGSO
Gate to source
ID Drain current 10 A
IGR Reverse gate current -30 mA
IGF Forward gate current 63 mA
PT*1 Total power dissipation 53.6 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1:Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
Po Output power
P.A.E. Power added efficiency
GLP Linear Power Gain VDS=10V,ID(RF off)=2.6A,=1.9GHz 9.5 10.5 - dB
Rth(ch-c) *3
*2 :Channel-case
*3 :Channel-ambient
Saturated drain current VDS=3V,VGS=0V - Transconductance VDS=3V,ID=2.6A - 3
Gate to source cut-off voltage VDS=3V,ID=20mA -2 - -5 V
Thermal resistance
voltage
(Ta=25C)
-15 V
VDS=10V,ID(RF off)=2.6A
f=1.9GHz,Pin=33dBm
Vf method - - 100
Δ
OUTLINE DRAWING
②
φ2.2 0.6±0.2
1
.
0
5
6
.
1
GF-7
Unit : millimeters
①
③
5.0
9.0±0.2
14.0
(1) GATE
(2) SOURC E (F LAN GE)
(3) DRAI N
Min. Typ. Max.
10 A
- S
40.5 41.5 - dBm
- 38 - %
C/W
N
I
M
2
3
.
0
/
0
+
4
.
4
②
N
I
M
2
5
4
6
.
.
0
0
±
9
.
1
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0912A
L & S BAND / 14W
non - matched
MGF0912TYPICAL CHARACTERISTICS( Ta=25deg.C )
MGF0912A S-parameters( Ta=25deg.C , VDS=10(V),IDS=2.6(A) )
Publication Date : Apr., 2011
2
< High-power GaAs FET (small signal gain stage) >
MGF0912A
L & S BAND / 14W
non - matched
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor product s better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Keep safety first in your circuit designs!
•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
semiconductor product best suited to the customer’s application; they do not convey any license under any
intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party.
•Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any
third-party’s rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
•All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are subject
to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It
is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized
Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product
listed herein.
The information described here may contain technical inaccuracies or typographical errors. Mitsubishi
Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these
inaccuracies or errors.
Please also pay attention to information published by Mitsubishi Electric Corporation by various means,
including the Mitsubishi Semiconductor home page (http://www.MitsubishiElectric.com/).
•When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before making
a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
•Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or
system that is used under circumstances in which human life is potentially at stake. Please contact
Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when
considering the use of a product contained herein for any specific purposes, such as apparatus or systems
for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
•The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or
in part these materials.
•If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other than
the approved destination.
Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of
destination is prohibited.
•Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor
for further details on these materials or the products contained therein.
Notes regarding these materials
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
3
Loading...