MITSUBISHI MGF0912A User Manual
< High-power GaAs FET (small signal gain stage) >
MGF0912A
L & S BAND / 14W
non - matched
DESCRIPTION
The MGF0912A, GaAs FET with an N-channel schottky
gate, is designed for use in L/S band amplifiers.
FEATURES
High output power
Po=41.5dBm(TYP.) @f=1.9GHz,Pin=33dBm
High power gain
Gp=10.5dB(TYP.) @f=1.9GHz
High power added efficiency
P.A.E =38%(TYP.) @f=1.9GHz,Pin=33dBm
Hermetic Package
APPLICATION
For L/S Band power amplifiers
QUALITY
GG
Delivery
Tray
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=2.6A Rg=50
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO Gate to drain voltage -15 V
VGSO
Gate to source
ID Drain current 10 A
IGR Reverse gate current -30 mA
IGF Forward gate current 63 mA
PT*1 Total power dissipation 53.6 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1:Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
Po Output power
P.A.E. Power added efficiency
GLP Linear Power Gain VDS=10V,ID(RF off)=2.6A,=1.9GHz 9.5 10.5 - dB
Rth(ch-c) *3
*2 :Channel-case
*3 :Channel-ambient
Saturated drain current VDS=3V,VGS=0V - Transconductance VDS=3V,ID=2.6A - 3
Gate to source cut-off voltage VDS=3V,ID=20mA -2 - -5 V
Thermal resistance
voltage
(Ta=25C)
-15 V
VDS=10V,ID(RF off)=2.6A
f=1.9GHz,Pin=33dBm
Vf method - - 100
Δ
OUTLINE DRAWING
②
φ2.2 0.6±0.2
1
.
0
5
6
.
1
GF-7
Unit : millimeters
①
③
5.0
9.0±0.2
14.0
(1) GATE
(2) SOURC E (F LAN GE)
(3) DRAI N
Min. Typ. Max.
10 A
- S
40.5 41.5 - dBm
- 38 - %
C/W
N
I
M
2
3
.
0
/
0
+
4
.
4
②
N
I
M
2
5
4
6
.
.
0
0
±
9
.
1
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0912A
L & S BAND / 14W
non - matched
MGF0912TYPICAL CHARACTERISTICS( Ta=25deg.C )
MGF0912A S-parameters( Ta=25deg.C , VDS=10(V),IDS=2.6(A) )
Publication Date : Apr., 2011
2
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