Mitsubishi MGF0910A Datasheet
MITSUBISHI SEMICONDUCTOR GaAs FET
Test conditions
ABSOLUTE MAXIMUM RATINGS (Ta=25˚C)
ηadd
MGF0910A
L, S BAND POWER GaAs FET
DESCRIPTION
The MGF0910A, GaAs FET with an N-channel schottky gate, is
designed for use in UHF band amplifiers.
FEATURES
• Class A operation
• High output power
P1dB=38dBm(TYP) @2.3GHz
• High power gain
GLP=11dB(TYP) @2.3GHz
• High power added efficiency
ηadd=45%(TYP) @2.3GHz,P1dB
• Hermetically sealed metal-ceramic package with ceramic lid
APPLICATION
UHF band power amplifiers
QUALITY GRADE
• IG
RECOMMENDED BIAS CONDITIONS
• VDS=10V
• ID=1.3A
• Rg=100Ω
• Refer to Bias Procedure
OUTLINE DRAWING
GF-21
17.5
14.3
9.4
10.0
Unit:millimeters
1
1.0
2-R1.25
22
3
1
GATE
2
SOURCE(FLANGE)
3
DRAIN
Symbol Parameter Ratings
VGDO
VGSO
ID
IGR
IGF
PT
Tch
Tstg
*1:TC=25˚C
Gate to drain voltage
Gate to source voltage
Drain current
Reverse gate current
Forward gate current
Total power dissipation *1
Channel temperature
Storage temperature
-65 to +175
-15
-15
5 A
15
31.5
27.3
175
Unit
V
V
mA
mA
W
˚C
˚C
ELECTRICAL CHARACTERISTICS (Ta=25˚C)
37
10
Limits
Typ MaxMin
–
–
1.5
–
-2
–
–
38
11
45
5.0
–
-5
–
–
–
–
5.5
–
Symbol Unit
IDSS
gm
VGS(off)
P1dB
GLP
Rth(ch-c)
*1:Channel to case *2:Pin=22dBm
Saturated drain current
Transconductance
Gate to source cut-off voltage
Output power at 1dB gain
compression
Linear power gain *2
Power added efficiency at P1dB
Thermal resistance *1
Parameter
VDS=3V,VGS=0V
VDS=3V,ID=1.3A
VDS=3V,ID=10mA
VDS=10V,ID 1.3A,f=2.3GHz
∆Vf method
A
S
V
dBm
dB
%
˚C/W
Nov. ´97
TYPICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR GaAs FET
MGF0910A
L, S BAND POWER GaAs FET
6
VDS=3V
Ta=25˚C
4
2
0
-3
-2 0
-1 6
GATE TO SOURCE VOLTAGE VGS(V)
PO & add vs. Pin
(f=2.3GHz)
ID vs. VGS
40
30
VDS=10V
ID=1.3A
PO
Gp=11 10 9 dB
ID vs. VDS
6
VGS=-0.5V/Step
Ta=25˚C
VGS=0V
4
2
0
0
2 5
1 3 4
DRAIN TO SOURCE VOLTAGE VDS(V)
GLP,P1dB, ID and add vs. VDS
(f=2.3GHz)
ID=1.3A13
12
11
10
39
37
GLP
P1dB
50
20
0
ηadd
20
30
40
30
20
10
0
INPUT POWER Pin(dBm)
35
40
20
6
8
ηadd
10
VDS(V)
Nov. ´97
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