MITSUBISHI MGF0909A User Manual
< High-power GaAs FET (small signal gain stage) >
MGF0909A
L & S BAND / 6W
non - matched
DESCRIPTION
The MGF0909A GaAs FET with an N-channel schottky
Gate, is designed for use L/S band amplifiers.
FEATURES
High output power
P1dB=38.0dBm(TYP.) @f=2.3GHz
High power gain
GLp=11.0dB(TYP.) @f=2.3GHz
High power added efficiency
add=45%(TYP.) @f=2.3GHz,P1dB
Hermetic Package
APPLICATION
For L/S Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=1.3A Rg=100
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGSO
Gate to source
VGDO Gate to drain breakdown voltage -15 V
ID Drain current 5 A
IGR Reverse gate current -15 mA
IGF Forward gate current 31.5 mA
PT Total power dissipation 27.3 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
breakdown voltage
-15 V
OUTLINE DRAWING
②
φ2.2 0.6±0.2
1
.
0
5
6
.
1
GF-7
Unit : millimeters
①
③
5.0
9.0±0.2
14.0
(1) GATE
(2) SOURC E (F LAN GE)
(3) DRAI N
N
I
M
2
3
.
0
/
0
+
4
.
4
②
N
I
M
2
5
4
6
.
.
0
0
±
9
.
1
Electrical characteristics
(Ta=25C)
Symbol Parameter Test conditions Limits Unit
I
DSS
V
GS(off)
gm
P1dB
add
GLP
Rth(ch-c)
*1:
Channel to case / Above parameters, ratings, limits are subject to change.
Saturated drain current
Gate to source cut-off voltage
Transconductance
Output power 1dB Compression P VDS
Power added Efficiency *1
Linear Power Gain *2
Thermal Resistance *1
VDS=3V,VGS=0V - -- 5.0 A
VDS=3V,ID=10mA -2.0 - -5.0 V
VDS=3V,ID=1.3A - 1.5 - S
=10V,ID=1.3A,f=2.3GHz 37.0 38.0 - dBm
*1:Po=P1dB - 45 - %
*2:Pi=22dBm 10.0 11.0 - dB
Vf Method - - 9 C/W
Min. Typ. Max.
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0909A
L & S BAND / 6W
non - matched
MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg.C
TC=0deg TC=25deg
45
40
35
TC=50deg TC=75deg
90
80
70
Po
30
25
60
50
PAE
20
40
PAE (%)
15
GP
GLP(dB) Pout(dBm)
10
5
0
0 10203040
Pin (dBm)
30
20
10
0
Publication Date : Apr., 2011
2
Loading...