MITSUBISHI MGF0907B User Manual
< High-power GaAs FET (small signal gain stage) >
MGF0907B
L & S BAND / 10W
non - matched
DESCRIPTION
The MGF0907B, GaAs FET with an N-channel schottky
gate, is designed for use in UHF band amplifiers.
FEATURES
Class A operation
High output power
P1dB=40.0dBm(TYP.) @f=2.3GHz
High power gain
GLP=10.0dB(TYP.) @f=2.3GHz
High power added efficiency
P.A.E =37%(TYP.) @f=2.3GHz,P1dB
Hermetically sealed metal-ceramic package with ceramic lid
APPLICATION
For UHF Band power amplifiers
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
Vds=10V Ids=2.4A Rg=50 Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO Gate to drain voltage -15 V
VGSO
ID Drain current 6 A
IGR Reverse gate current -20 mA
IGF Forward gate current 42 mA
PT*1 Total power dissipation 37.5 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1:Tc=25C
Gate to source
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
P1dB
GLP Linear Power Gain 8 10 - dB
ID Drain current - 2.2 3.0 A
P.A.E. Power added efficiency
Rth(ch-c) *2
*2 :Channel-case
Saturated drain current VDS=3V,VGS=0V - 4
Transconductance VDS=3V,ID=2.2A - 2
Gate to source cut-off voltage VDS=3V,ID=20mA -1 -2.5 -4 V
Output power at 1dB gain compression
Thermal resistance
voltage
(Ta=25C)
-15 V
VDS=10V,ID(RF off)=2.4A
f=2.3GHz
Vf method - - 4.0
Δ
Min. Typ. Max.
38.5 40 - dBm
- 37 - %
6 A
- S
C/W
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0907B
L & S BAND / 10W
non - matched
MGF0907B TYPICAL CHARACTERISTICS( Ta=25deg.C )
ID vs. VGS ID vs. VDS
Po, PAE vs. Pin
(f=2.3GHz)
GLP, P1dB, ID, PAE vs. VDS
(f=2.3GHz)
Publication Date : Apr., 2011
2
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