MITSUBISHI
SUBJECT:
RF characteristics data of MGF0906B for Freq.=2.11-2.17GHz band
SUMMARY:
Evaluate conditions(In "
Dec. 2005
HIGH FREQUENCY & OPTICAL DEVICE WORKS
MITSIBISHI ELECTRIC CORPORATION (1/4 )
APPLICATION NOTE
This application note show the RF characteristics data of MGF0906B
－ Sample history:
MGF0906B : Lot number "48B"
－
"part shown as follows, there is an evaluation result. )
ELECTRIC SEMICONDUCTOR
Date : 8th Dec. 2005
CW(1tone) Tc
1.2 0.96
VD 10 Tc=25deg.C +25 Freq.=2.14GHz
9 Freq.=2.14GHz +80
ACLR
VD 10 Tc=25deg.C
9 Freq.=2.14GHz
IMD
VD 10 Tc=25deg.C
9 Freq.=2.17GHz
Results
－
Page2-3 shows the RF characteristics data.
Page 4 shows the Equivalent Circuit.
IDQ
1.2 0.96
IDQ
1.2 0.96
-
-
-
--
-20 Vd=10V,IDQ=1.2A
CW
ACLRIDQ
Dec. 2005
MGF0906B RF TEST DATA for Freq.=2.11-2.17GHz BAND
HIGH FREQUENCY & OPTICAL DEVICE WORKS
MITSIBISHI ELECTRIC CORPORATION (2/4 )
Po,Id(RF) v.s. Pin Freq.=2.14GHz CW
(1tone) VD=10V,IDQ=1.2A
Po,Id(RF) v.s. Pin Freq.=2.14GHz
CW (1tone) VD=10V,Tc=25deg.C
40
35
30
Po(dBm)
25
Tc=80deg.C(Po)
Tc=25deg.C(Po)
Tc=-20deg.C(Po)
Tc=80deg.C(Id(RF))
Tc=25deg.C(Id(RF))
Tc=-20deg.C(Id(RF))
20
15
5
4
3
2
Id(RF)(A)
1
0
5 10 15 20 25 30 35
Pin(dBm)
Po v.s. Freq. CW (1tone)
VD=10V,IDQ=1.2A,Tc=25deg.C
35
40
35
30
25
Po(dBm)
IDQ=1.2A(Po)
IDQ=0.96A(Po)
IDQ=1.2A(Id(RF))
IDQ=0.96A(Id(RF))
20
15
5 10 15 20 25 30 35
Pin(dBm)
Po,Id(RF) v.s. Pin Freq.=2.14GHz CW
(1tone) IDQ=1.2A,Tc=25deg.C
40
5
4
3
2
Id(RF)(A)
1
0
5
30
25
20
Po(dBm)
Pin=9dBm
Pin=14dBm
Pin=19dBm
15
10
2.40 2.50 2.60 2.70 2.80
Freq.(GHz)
35
30
25
Po(dBm)
VD=10V(Po)
VD=9V(Po)
VD=10V(Id(RF))
VD=9V(Id(RF))
20
15
5 10 15 20 25 30 35
Pin(dBm)
4
3
2
Id(RF)(A)
1
0
ACLR v.s. Po(W-CDMA) ; 3GPP TEST MODEL1 64ch's 2carrier Signal
Dec. 2005
MGF0906B RF TEST DATA for Freq.=2.11-2.17GHz BAND
HIGH FREQUENCY & OPTICAL DEVICE WORKS
MITSIBISHI ELECTRIC CORPORATION ( 3/4 )
ACLR v.s. Po VD=10V,IDQ=1.2A
Freq.=2.14GHz
ACLR(dBc)
-15
-20
-25
-30
-35
-40
-45
Tc=80deg.C(-5MHz)
Tc=80deg.C(+5MHz)
Tc=80deg.C(-10MHz)
Tc=80deg.C(+10MHz)
Tc=25deg.C(-5MHz)
Tc=25deg.C(+5MHz)
Tc=25deg.C(-10MHz)
Tc=25deg.C(+10MHz)
Tc=-20deg.C(-5MHz)
Tc=-20deg.C(+5MHz)
Tc=-20deg.C(-10MHz)
Tc=-20deg.C(+10MHz)
-50
-55
-60
-65
10 15 20 25 30 35
Po(dBm)
ACLR v.s. Po VD=10V
Freq.=2.14GHz Tc=25deg.C
-15
-20
-25
-30
-35
IDQ=1.2A(-5MHz)
IDQ=1.2A(+5MHz)
IDQ=1.2A(-10MHz)
IDQ=1.2A(+10MHz)
IDQ=0.96A(-5MHz)
IDQ=0.96A(+5MHz)
IDQ=0.96A(-10MHz)
IDQ=0.96A(+10MHz)
-40
-45
ACLR(dBc)
-50
-55
-60
-65
10 15 20 25 30 35
Po(dBm)
IM3,IM5 v.s. Po VD=10V,IDQ=1.2A
Tc=25deg.C
-15
-20
-25
-30
-35
IM3 Low
IM3 High
IM5 Low
IM5 High
f1=2.17GHz
f2=2.18GHz
-40
-45
-50
IM3,IM5(dBc)
-55
-60
-65
-70
10 15 20 25 30 35
Po(S.C.L.)(dBc)
ACLR v.s. Po IDQ=1.2A
Freq.=2.14GHz Tc=25deg.C
-15
-20
-25
-30
-35
VD=10V(-5MHz)
VD=10V(+5MHz)
VD=10V(-10MHz)
VD=10V(+10MHz)
VD=9V(-5MHz)
VD=9V(+5MHz)
VD=9V(-10MHz)
VD=9V(+10MHz)
-40
-45
ACLR(dBc)
-50
-55
-60
-65
10 15 20 25 30 35
Po(dBm)
Dec. 2005
MGF0906B Equivalent Circuit for Freq.=2.11-2.17GHz BAND
HIGH FREQUENCY & OPTICAL DEVICE WORKS
MITSIBISHI ELECTRIC CORPORATION ( 4/4 )
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