MITSUBISHI MGF0905A User Manual
< High-power GaAs FET (small signal gain stage)>
MGF0905A
L & S BAND / 2.5W
non - matched
DESCRIPTION
The MGF0905A, GaAs FET with an N-channel schottky
gate, is designed for use in UHF band amplifiers.
FEATURES
High output power
Po=34.0dBm(TYP.) @f=1.65GHz,Pin=26dBm
High power gain
Gp=8.0dB(TYP.) @f=1.65GHz,Pin=26dBm
High power added efficiency
P.A.E =40%(TYP.) @f=1.65GHz,Pin=26dBm
APPLICATION
For UHF Band power amplifiers
QUALITY
GG
RECOMMENDED BIAS CONDITIONS
Vds=8V Ids=800mA Rg=100 Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO Gate to drain voltage -17 V
VGSO
Gate to source
ID Drain current 3200 mA
IGR Reverse gate current -10 mA
IGF Forward gate current 21.5 mA
PT*1 Total power dissipation 12 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1:Tc=25C
Electrical characteristics
Symbol Parameter Test conditions Limits Unit
IDSS
gm
VGS(off)
Po Output power
P.A.E. Power added efficiency
Rth(ch-c) *2
Rth(ch-a) *3
*2 :Channel-case
*3 :Channel-ambient
Saturated drain current VDS=3V,VGS=0V 1600 2400
Transconductance VDS=3V,ID=800mA 500 800
Gate to source cut-off voltage VDS=3V,ID=10mA -1 -3 -5 V
Thermal resistance
Thermal resistance
voltage
(Ta=25C)
-17 V
VDS=8V,ID(RF off)=800mA
f=1.65GHz,Pin=26dBm
Vf method - - 12.5
Δ
Vf method - - 72.5
Δ
OUTLINE DRAWING
②
φ2.2 0.6±0.2
1
.
0
5
6
.
1
GF-7
Unit : millimeters
①
③
5.0
9.0±0.2
14.0
(1) GATE
(2) SOURC E (F LAN GE)
(3) DRAI N
Min. Typ. Max.
3200 mA
- mS
33 34 - dBm
- 40 - %
C/W
C/W
N
I
M
2
3
.
0
/
0
+
4
.
4
②
N
I
M
2
5
4
6
.
.
0
0
±
9
.
1
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0905A
L & S BAND / 2.5W
non - matched
MGF0905A TYPICAL CHARACTERISTICS( Ta=25deg.C )
ID vs. VGS ID vs. VDS
Po, PAE vs. Pin Po, PAE vs. VDS
Publication Date : Apr., 2011
2
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