Mitsubishi MF38M1-L6DAGXX Datasheet
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
8/16-bit Data Bus
Static RAM Card
Connector Type
Two- piece 68-pin
DESCRIPTION
Mitsubishi’s Static RAM cards provide large
memory capacities on a device approximately
the size of a credit card
(85.6mm×54mm×5.0mm).
The cards use an 8/16 bit data bus.
Availabale in 8MB capacities, Mitsubishi’s
SRAM cards conform to the JEIDA/PCMCIA
standard.
Mitsubishi acheived high density memory,
while maintaining credit size by using a thin
small outline packaging technology(TSOP).
The TSOP surpasses conventional memory
card chip-on-board packaging technology where
larger, surface-mount devices result in a
tradeoff between card size and optimum memory
density. This allows up to 16 memory Ics
(plus interface circuitry) to be mounted in a
card that in only 5.0mm thick.
MF38M1-L6DAGXX
FEATURES
nUses TSOP (Thin Small Outline Package) to
achieve very high memory density coupled
with high reliability, without enlarging card
size.
nOne to 16 memory ICs can be mounted in a
card that is only 5.0mm thick.
nElectrostatic discharge protection to 15kV
nBuffered interface
nWrite protect switch
nAttribute memory
n68pin JEIDA/PCMCIA
APPLICATIONS
nOffice automation nIndustrial
nData Communication nTelecommunications
nComputers nConsumer
PRODUCT LIST
Item Memory Data Bus Attribute Auxialiary Memory Outline Main battery
Type name capacity width(bits) memory battery organization drawing holder
MF38M1-L6DAGXX 8MB 8/16 YES NO 4M bit SRAM×16 68P-010 Screw type
MITSUBISHI
ELECTRIC
1/11
PIN ASSIGNMENT
1
GND
Ground
35
GND
Ground
2
D3
36
CD1#
Card detect 1
3
D4
37
D11
4D5 Data I/O
38
D12
5
D6
39
D13
Data I/O
6
D7
40
D14
7
CE1#
Card enable 1
41
D15
8
A10
Address input
42
CE2#
Card enable 2
9
OE#
Output enable
43
NC
10
A11
44NC No connection
11
A9
45
NC
12A8 Address input
46
A17
13
A13
47
A18
14
A14
48
A19
Address input
15
WE#
Write enable
49
A20
16NCNo connection
50
A21
17
VCCPower supply voltage
51
VCC Power supply voltage
18NCNo connection
52NCNo connection
19
A16
53
A22
Address input
20
A15
54
NC
21
A12
55
NC
22
A7
56
NC
23
A6
57NC No connection
24A5 Address input
58
NC
25
A4
59
NC
26
A3
60
NC
27
A2
61
REG#
REG function
28
A1
62
BVD2
Battery voltage detect 2
29
A0
63
BVD1
Battery voltage detect 1
30
D0
64
D8
31D1 Data I/O
65D9 Data I/O
32
D2
66
D10
33WPWrite protect
67
CD2#
Card detect 2
34
GND
Ground
68
GND
Ground
Two-Piece Type (68-pin)
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
Pin Pin
Symbol
No. No.
Function
Symbol
Function
WRITE PROTECT MODE (WP)
When the write protect switch is switched on, this
card goes into a write protect mode that can read
but not write data.
In this mode, WP pin becomes “H” level.
At the shipment the write protect switch is switched
off (Normal mode : The card can be written ; WP pin
indicates “L” level).
MITSUBISHI
ELECTRIC
2/11
BLOCK DIAGRAM (8MB)
A22
WP#
WRITE PROTECT
ON
OFF
13198
8
BR2325
POWER CONTROLLER
DECODER
8
2
17
A21
A20
A0
A19
A18
A17
A16
A15
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
CE1#
CE2#
WE#
OE#
REG#
CD1#
CD2#
ADDRESS-
ADDRESS-
BUS
BUFFERS
MODE
CONTROL
LOGIC
MITSUBISHI MEMORY CARD
CS#
COMMON
MEMORY
4Mbit SRAM×16
OE#
WE#
CS#
ATTRIBUTE
MEMORY
OE#
64Kbit
E2PROM×1
WE#
TO INTERNAL
POWER SUPPLY
VOLTAGE DETECTOR
&
STATIC RAM CARDS
DATA-BUS
BUFFERS
VCC
BVD2
BVD1
GND
D15
D14
D13
D12
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
D0
FUNCTION TABLE
Mode
REG# CE1# CE2# OE# WE# A0
Standby X H H X X X High-impedance High-impedance standby
Read A (16bit) common H L L L H X Odd Byte Data out Even Byte Data out Active
Write A (16bit) common H L L H L X Odd Byte Data in Even Byte Data in Active
Read B (8bit) common
Write B (8bit) common
H L H L H L High-impedance Even Byte Data out Active
H L H L H H High-impedance Odd Byte Data out Active
H L H H L L High-impedance Even Byte Data in Active
H L H H L H High-impedance Odd Byte Data in Active
Read C (8bit) common H H L L H X Odd Byte Data out High-impedance Active
Write C (8bit) common H H L H L X Odd Byte Data in High-impedance Active
Output disable X X X H H X High-impedance High-impedance Active
Read A (16bit) attribute L L L L H X Data out (unknown) Even Byte Data out Active
Read B (8bit) attribute
L L H L H L High-impedance Even Byte Data out Active
L L H L H H High-impedance Data out (unknown) Active
Read C (8bit) attribute L H L L H X Data out (unknown) High-impedance Active
Write A (16bit) attribute L L L H L X don’t care Even Byte Data in Active
Write B (8bit) attribute
L L H H L L don’t care Even Byte Data in Active
L L H H L H don’t care don’t care Active
Write C (8bit) attribute L H L H L X don’t care don’t care Active
I/O (D15~D8) I/O (D7~D0) ICC
Note 1 : H=VIH, L=VIL, X=VIH or VIL
MITSUBISHI
ELECTRIC
3/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Ratings Unit
VCC Supply voltage -0.3~6.0 V
Vi Input voltage With respect to GND -0.3~VCC+0.3 V
Vo Output voltage 0~VCC V
Topr1 Operating temperature 1 Read, Write, Operation 0~70 °C
Topr2 Operating temperature 2 Data retention 0~70 °C
Tstg Storage temperature -30~80 °C
RECOMMENDED OPERATING CONDITIONS(Ta=0~55°C, unless otherwise noted)
Symbol
Parameter
Min. Typ. Max.
Limits
Unit
VCC VCC supply voltage 4.75 5.0 5.25 V
GND System ground 0 V
VIH High input voltage 2.4 VCC V
VIL Low input voltage 0 0.8 V
ELECTRICAL CHARACTERISTICS (Ta=0~55°C, VCC=5V±5%, unless otherwise noted)
Symbol
VOH High output voltage IOH=-1.0mA, Other outputs 2.4 V
VOL Low output voltage IOL=2mA 0.4 V
IIH High input current VI=VCC V 10 µA
IIL
IOZH High output current
IOZL Low output current
ICC 1 • 1 Active supply
ICC 1 • 2 Active supply
ICC 2 • 1 Standby supply current 1 CE1#=CE2#=VIH
ICC 2 • 2 Standby supply current 2
VBDET1 Battery detect
VBDET2 Battery detect
Parameter Test conditions
Low input current VI=0V
CE1#=CE2#=VIH or OE#=VIH WE#=VIH,
in off state VO=VCC
CE1#=CE2#=VIH or OE#=VIH WE#=VIH,
in off state VO=0V
CE1#=CE2#=VIL, other inputs VIH or
current 1
current 2
reference voltage 1
reference voltage 2
VIL,Outputs=open
CE1#=CE2# ≤ 0.2V, other inputs ≤
0.2V or ≥ VCC-0.2V, Outputs=open
other inputs=VIH or VIL
CE1#=CE2# ≥ VCC-0.2V
other inputs ≤ 0.2V or ≥ VCC-0.2V
Vcc=5V,Ta=25°C
¬
Vcc=5V,Ta=25°C
¬
CE1#, CE2#, WE#, OE#, REG#
Other inputs -10
Limits
Min. Typ. Max.
-10 -70 µA
2.27
2.55
2.37
2.65
Unit
10 µA
-10 µA
280 mA
270 mA
10 mA
1 mA
2.47
2.75
Note 2 : Currents flowing into the IC are taken as positive (unsigned).
3 : Typical values are measured at VCC=5V, Ta=25°C.
¬
Pin asserted when battery voltage drops below specified level.
V
V
MITSUBISHI
ELECTRIC
4/11
Loading...