Mitsubishi MF365A-LCDATXX, MF3513-LSDATXX, MF34M1-LSDATXX, MF34M1-LCDATXX, MF3129-LCDATXX Datasheet
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MITSUBISHI MEMORY CARD
STATIC RAM CARDS
8/16-bit Data Bus
Static RAM Card
Connector Type
Two- piece 68-pin
DESCRIPTION
Mitsubishi’s Static RAM cards provide large
memory capacities on a device approximately the
size of a credit card(85.6mm×54mm×3.3mm).
The cards use a 8/16 bit data bus.The devices
use a replaceable lithium battery to maintain data.
Available in 64K byte-4M byte capacities,
Mitsubishi’s Static RAM cards are available with
a 68-pin, two-piece connector.
MF365A-LCDATXX
MF365A-LSDATXX
MF3129-LCDATXX
MF3129-LSDATXX
MF3257-LCDATXX
MF3257-LSDATXX
MF3513-LCDATXX
MF3513-LSDATXX
MF31M1-LCDATXX
MF31M1-LSDATXX
MF32M1-LCDATXX
MF32M1-LSDATXX
MF34M1-LCDATXX
MF34M1-LSDATXX
Electrostatic discharge protectiton to 15kV
Buffered interface
68-pin connector
8-bit and 16-bit data width
Write protect switch
Battery voltage pin
LS Type Wide Range operating temperature
Ta= -20 to 70°C
FEATURES
Uses TSOP (Thin Small Outline Package) to
achieve very high memory density coupled
with high reliability, without enlarging card
size
PRODUCT LIST
Item Memory Data Bus Attribute Auxialiary Memory Outline Main battery
Type name capacity width(bits) memory battery organization drawing holder
MF365A-LCDATXX 64KB 256K bit SRAM×2
MF3129-LCDATXX 128KB 256K bit SRAM×4
MF3257-LCDATXX 256KB 1M bit SRAM×2
MF3513-LCDATXX 512KB 1M bit SRAM×4
MF31M1-LCDATXX 1MB 1M bit SRAM×8
MF32M1-LCDATXX 2MB 1M bit SRAM×16
MF34M1-LCDATXX 4MB 8/16 NO NO 4M bit SRAM×8 68P-003 Screw type
MF365A-LSDATXX 64KB 256K bit SRAM×2
MF3129-LSDATXX 128KB 256K bit SRAM×4
MF3257-LSDATXX 256KB 1M bit SRAM×2
MF3513-LSDATXX 512KB 1M bit SRAM×4
MF31M1-LSDATXX 1MB 1M bit SRAM×8
MF32M1-LSDATXX 2MB 1M bit SRAM×16
MF34M1-LSDATXX 4MB 4M bit SRAM×8
APPLICATIONS
Office automation Data Communications
Computers Industrial
Telecommunications Consumer
MITSUBISHI
ELECTRIC
1/11
PIN ASSIGNMENT
1
GND
Ground
35
GND
Ground
2D336
CD1#
Card detect 1
3D437
D114D5
Data I/O
38
D125D639D13
Data I/O
6D740
D147CE1#
Card enable 1
41
D158A10
Address input
42
CE2#
Card enable 2
9
OE#
Output enable
43NC10
A1144NC
No connection
11A945NC12A8 Address input
46
A17
A17(NC for≤128KB types)
13
A1347A18
A18(NC for≤256KB types)
14
A1448A19
A19(NC for≤512KB types)
15
WE#
Write enable
49
A20
A20(NC for≤1MB types)
16NCNo connection
50
A21
A21(NC for≤2MB types)
17
VCCPower supply voltage
51
VCCPower supply voltage
18NCNo connection
52NCNo connection
19
A16
A16(NC for 64KB type)
53NCNo connection
20
A1554NC21A1255NC22A756NC23A657NC
No connection
24A5 Address input
58NC25A459NC26A360NC27A261
REG#
REG function
28A162
BVD2
Battery voltage detect 2
29A063
BVD1
Battery voltage detect 1
30D064D831D1 Data I/O
65D9 Data I/O
32D266
D1033WP
Write protect
67
CD2#
Card detect 2
34
GND
Ground
68
GND
Ground
Two-Piece Type (68-pin)
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
Pin Pin
Symbol
No. No.
Function
Symbol
Function
Address input
WRITE PROTECT MODE (WP)
When the write protect switch is switched on, this
card goes into a write protect mode that can read
but not write data.
In this mode, the WP pin becomes “H” level.
At the shipment the write protect switch is switched
off (Normal mode : The card can be written ; WP pin
indicates “L” level).
MITSUBISHI
ELECTRIC
2/11
BLOCK DIAGRAM (4MB)
A21
D0
BVD1
WP#
WRITE PROTECT
ON
19
16
BR2325
POWER CONTROLLER
POWER
8
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
CE1#
CE2#
WE#
OE#
REG#
CD1#
CD2#
A20
A0
A19
A18
A17
A16
A15
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
OFF
ADDRESSDECODER
ADDRESS-
BUS
BUFFERS
MODE
CONTROL
LOGIC
CS#
COMMON
MEMORY
4Mbit SRAM×8
OE# WE#
TO INTERNAL
VOLTAGE DETECTOR
&
GND
DATA-BUS
BUFFERS
VCC
BVD2
D15
D14
D13
D12
D11
D10
D9
D8
D7
D6
D5
D4
D3
D2
D1
FUNCTION TABLE
Mode
REG# CE1# CE2# OE# WE# A0
Standby X H H X X X High-impedance High-impedance Standby
Read A (16bit) common H L L L H X Odd Byte Data out Even Byte Data out Active
Write A (16bit) common H L L H L X Odd Byte Data in Even Byte Data in Active
Read B (8bit) common H L H L H L High-impedance Even Byte Data out Active
H L H L H H High-impedance Odd Byte Data out Active
Write B (8bit) common H L H H L L High-impedance Even Byte Data in Active
H L H H L H High-impedance Odd Byte Data in Active
Read C (8bit) common H H L L H X Odd Byte Data out High-impedance Active
Write C (8bit) common H H L H L X Odd Byte Data in High-impedance Active
Output disable X X X H H X High-impedance High-impedance Active
Read A (16bit) attribute L L L L H X Data out (unknown) Data out (FFh) Active
Read B (8bit) attribute L L H L H L High-impedance Data out (FFh) Active
L L H L H H High-impedance Data out (unknown) Active
Read C (8bit) attribute L H L L H X Data out (unknown) High-impedance Active
I/O (D15~D8) I/O (D7~D0) ICC
Note 1 : H=VIH, L=VIL, X=VIH or VIL
MITSUBISHI
ELECTRIC
3/11
MITSUBISHI MEMORY CARD
STATIC RAM CARDS
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Ratings Unit
VCC Supply voltage -0.3~6.0 V
Vi Input voltage With respect to GND -0.3~VCC+0.3 V
Vo Output voltage 0~VCC V
Topr1 Operating temperature 1 Read, Write, Operation LC series 0~70 °C
LS series -20~70 °C
Topr2 Operating temperature 2 Data retention LC series 0~70 °C
LS series -20~70 °C
Tstg Storage temperature -30~80 °C
RECOMMENDED OPERATING CONDITIONS (LC series Ta= 0~55°C, unless otherwise noted)
(LS series Ta=-20~70°C, unless otherwise noted)
Symbol
VCC VCC Supply voltage 4.50 5.0 5.25 V
GND System ground 0 V
VIH High input voltage 3.5 VCC V
VIL Low input voltage 0 0.8 V
Parameter
Min. Typ. Max.
Limits
Unit
MITSUBISHI
ELECTRIC
4/11
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