Mitsubishi M62023P, M62023L, M62023FP Datasheet
PRELIMINARY
PRELIMINARY
Notice:This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI <Dig./Ana.INTERFACE>
M62023L,P,FP
SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP
GENERAL DESCRIPTION
The M62023L/P/FP is a system reset IC that controls the memory
backup function of an SRAM and an embedded RAM of a
microcontroller.
The IC outputs reset signals (RES/RES) to a microcontroller at
power-down and power failure. It also shifts the power supply to
RAMs from main to backup, outputs a signal (CS) that invokes
standby mode, and alters RAMs to backup circuit mode.
FEATURES
• Built-in switch for selection between main power supply and back up power supply to RAMs
• Small difference between input and output voltages
(IOUT=80mA, VIN=3V) : 0.15V typ
• Detection voltage (power supply monitor voltage) : 2.57V typ
• Chip select signal output (CS)
• Two channels of reset outputs (RES/RES)
• Power on reset circuit
APPLICATION
Power supply control systems for memory of microcontroller
systems in electronic equipment such as OA equipment,
industrial equipment, and home-use electronic appliances
and SRAM boards with built-in backup function that require
switching between external power supply and battery.
PIN CONFIGURATION (TOP VIEW)
8 CS
7 RES
6 GND
5 RES
4 Ct
3 VIN
2 VBAT
1 VOUT
Outline 8P5 (L)
VOUT 1
VBAT 2
VIN 3
8 CS
7 RES
6 GND
BLOCK DIAGRAM
VIN
3
R1
R2
RES
RES
7
5
Com
1.24V
SW
RESET
CIRCUIT
DELAY
CIRCUIT
Ct 4
Outline 8P4 (P)
8P2S-A (FP)
D1
5 RES
1
VOUT
VBAT
2
CS
8
4
Ct
6
GND
( / )
1 4
1997.5.30- rev
MITSUBISHI <Dig./Ana.INTERFACE>
M62023L,P,FP
PRELIMINARY
PRELIMINARY
Notice:This is not a final specification.
Some parametric limits are subject to change.
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
Symbol Parameter Conditions Ratings Unit
VIN
IOUT
Input voltage
Output current
Pd Power dissipation 800(L)/625(P)/440(FP) mW
K
Topr
Tstg
Thermal derating mW/°C
Operating temperature
Storage temperature
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP
7
100
Ta ≥ 25°C
8(L)/6.25(P)/4.4(FP)
-20 to +75
-40 to +125
V
mA
°C
°C
Symbol Parameter Unit
VS 2.44 V
∆VS
ICC Circuit current
Detection voltage
Hysteresis voltage mV
VIN (At charge from H L)
∆VS=VSH-VSL
IOUT=0mA
Test Conditions
VIN=2V
VIN=3V
VDROP
VOH(Ct)
VOL(Ct)
VOH(RES)
VOL(RES)
VOH(RES)
VOL(RES)
VOH(CS)
VOL(CS)
IR
VF
tpd
td
VOPL(RES)
Difference between
input and output voltages
Ct output voltage (high level)
Ct output voltage (low level)
RES output voltage (high level)
RES output voltage (low level)
RES output voltage (high level)
RES output voltage (low level)
CS output voltage (high level)
CS output voltage (low level)
Backup Di leak current
Backup Di forward direction voltage
Delay time
Response time
RES limit voltage of operation
VIN=3V
VIN=3V (Note 1)
VIN=2V (Note 1)
VIN=2V (Note 1)
VIN=3V
VIN=3V (Note 1)
VIN=2V
VIN=2V (Note 2)
VIN=0V, VBAT=3V (Note 2)
VIN=3V
VBAT=3V
IF=10µA
VIN=0V 3V, Ct=4.7µF
VIN=3V 2V
(Note 3)
IOUT=50mA
IOUT=80mA
(Note 1)
Isink=1mA
(Note 1)
Isink=1mA
(Note 1)
Isink=1mA
VIN=3V
VIN=0V
Limits
Min Typ Max
2.57
2.70
50 200100
1.5 3.0
6.5
10
0.1 0.2
0.15 0.3
2.42.0
0.02 0.1
2.01.5
0.02
0.04 0.2
3.02.5
0.02
0.04 0.2
1.61.3
2.472.40
0.07
0.08 0.3
±0.5
±0.5
0.54 0.6
27 5510
5.0 25.0
0.65
mA
V
V
V
V
V
V
V
V
V
µA
V
ms
µs
V
Note 1. Regarding conditions to measure VOH and VOL, voltage values are generated by internal resistance only and no external
resistor is used.
2. These values are produced inserting an external resistor, RCS=1MΩ, between the CS pin and GND.
3. With no external resistor (10KΩ internal resistance only)
( / )
2 4
1997.5.30- rev
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