Mitsubishi M5M5Y816WG-85HI, M5M5Y816WG-70HI Datasheet

2001.06.11 Ver. 0.2

8388608

-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM

Some parametric limits are subject to change.

1

(TOP VIEW)

DQ3A7DQ1S2VCC

GND

DQ6A2S1

DQ2

DQ4

DQ7A1A4A6A5

A17

A15A0A3

GND*

A14OEBC2

DQ15

DQ13

DQ10

BC1

DQ16

DQ14

GND

DQ11DQ8WA13

A12

N.C.

DQ9

N.C.

A11

A10A9A8

M5M5Y816WG -70HI, -85HI

MITSUBISHI LSIs

Preliminary

Notice: This is not a final specification.

Those are summarized in the part name table below.

DESCRIPTION

The M5M5Y816 is a family of low voltage 8-Mbit static RAMs
organized as 524288-words by 16-bit, fabricated by Mitsubishi's
high-performance 0.18µm CMOS technology.
The M5M5Y816 is suitable for memory applications where a
simple interfacing , battery operating and battery backup are the
important design objectives.
M5M5Y816WG is packaged in a CSP (chip scale package),
with the outline of 7.5mm x 8.5mm, ball matrix of 6 x 8 (48ball)
and ball pitch of 0.75mm. It gives the best solution for
a compaction
of mounting area as well as flexibility of wiring pattern of printed
circuit boards.

Version,

Operating

temperature

I-version

-40 ~ +85°C

Part name

M5M5Y816WG -70HI

M5M5Y816WG -85HI

Power

Supply

1.65 ~ 2.3V

1.65 ~ 2.3V

Access time

max.

70ns

85ns

FEATURES

- Single 1.65~2.3V power supply

- Small stand-by current: 0.5µA (2.0V, typ.)

- No clocks, No refresh

- Data retention supply voltage =1.3V

- All inputs and outputs are TTL compatible.

- Easy memory expansion by S1, S2, BC1 and BC2

- Common Data I/O

- Three-state outputs: OR-tie capability

- OE prevents data contention in the I/O bus

- Process technology: 0.18µm CMOS

- Package: 48ball 7.5mm x 8.5mm CSP

Active

current

Icc1

(2.3V, max)

30mA

(10MHz)

3mA

(1MHz)

* Typical

0.5

Stand-by current (µA)

Ratings (max.)

70°C 85°C25°C

40°C25°C 40°C

1

* Typical parameter indicates the value for the center
of distribution at 2.0V, and not 100% tested.

301542

PIN CONFIGURATION

A

B

C

D

E

F

G

H

Outline: 48F7Q
NC: No Connection
*Don't connect E3 ball to voltage level more than 0V

1 2 3 4 5 6

VCC

A18

DQ12

NCor

A16

DQ5

Pin Function

A0 ~ A18

DQ1 ~ DQ16

S1
S2

W

OE
BC1
BC2

Vcc

GND

Address input
Data input / output
Chip select input 1
Chip select input 2
Write control input
Output enable input

Lower Byte (DQ1 ~ 8)

Upper Byte (DQ9 ~ 16)

Power supply
Ground supply

MITSUBISHI ELECTRIC

2001.06.11 Ver. 0.2

8388608

-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM

Some parametric limits are subject to change.

2

Non selection

Non selection

CLOCK

GENERATOR

-

M5M5Y816WG -70HI, -85HI

FUNCTION

The M5M5Y816WG is organized as 524288-words by
16-bit. These devices operate on a single +1.65~2.3V
power supply, and are directly TTL compatible to both
input and output. Its fully static circuit needs no clocks
and no refresh, and makes it useful.
The operation mode are determined by a combination
of the device control inputs BC1 , BC2 , S1, S2 , W
and OE. Each mode is summarized in the function
table.
A write operation is executed whenever the low level
W overlaps with the low level BC1 and/or BC2 and the
low level S1 and the high level S2. The
address(A0~A18) must be set up before the write cycle
and must be stable during the entire cycle.
A read operation is executed by setting W at a high
level and OE at a low level while BC1 and/or BC2 and
S1 and S2 are in an active state(S1=L,S2=H).
When setting BC1 at the high level and other pins are
in an active stage , upper-byte are in a selectable mode
in which both reading and writing are enabled, and lower­byte are in a non-selectable mode. And when setting
BC2 at a high level and other pins are in an active
stage, lower-byte are in a selectable mode and upper­byte are in a non-selectable mode.

BLOCK DIAGRAM

MITSUBISHI LSIs

Preliminary

Notice: This is not a final specification.

When setting BC1 and BC2 at a high level or S1 at a high
level or S2 at a low level, the chips are in a non-selectable
mode in which both reading and writing are disabled. In this
mode, the output stage is in a high-impedance state,
allowing OR-tie with other chips and memory expansion by
BC1, BC2 and S1, S2.
The power supply current is reduced as low as 0.5µA (25°C,
typical), and the memory data can be held at +1.3V power
supply, enabling battery back-up operation during power
failure or power-down operation in the non-selected mode.

FUNCTION TABLE

S2

BC1BC2

S1

L X X

H

L X X

L

H X X

H

X H H X X

X

H XLL H Din

L

H HL H

L

H HL Active

L

H H L L Write Din ActiveX

L

H L H

L

H H L Active

L

H L DinLL X

L

H L DoutHL L

L

H L

L

OE

W
X X

X X
X X

H H High-Z High-Z

H High-Z

Mode

Non selection
Non selection

Write
Read

Read

H

Write
Read

H High-Z

DQ1~8

High-Z
High-Z
High-Z
High-Z High-Z

High-Z

High-Z

High-Z ActiveHL

DQ9~16

High-Z
High-Z
High-Z

High-Z
High-ZDout ActiveL

Din Active
Dout Active

Icc
Standby
Standby

Standby
Standby

Active

ActiveL DoutH High-Z

A0

A1

A17

A18

S1

S2

BC1

BC2

W

OE

MEMORY ARRAY

524288 WORDS

x 16 BITS

DQ

1

DQ

8

DQ

9

DQ

16

Vcc

GND

MITSUBISHI ELECTRIC

2001.06.11 Ver. 0.2

8388608

-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM

Some parametric limits are subject to change.

3

10

mA

f= 10MHz

0 ~ Vcc

f= 10MHz

Typ

<=<=>

<

=

10

(1)

>

=

(2)

other inputs = 0 ~ Vcc

<=>

=

(3)

>=other inputs = 0 ~ Vcc

>=<

=

M5M5Y816WG -70HI, -85HI

ABSOLUTE MAXIMUM RATINGS

MITSUBISHI LSIs

Preliminary

Notice: This is not a final specification.

Symbol Parameter Units

V
VI
VO
Pd

Ta
Tstg

Supply voltage

cc

Input voltage

Output voltage

Power dissipation

Operating
temperature

Storage temperature

Conditions
With respect to GND
With respect to GND
With respect to GND

Ta=25°C
I-version

Ratings

-0.5* ~ +2.7

-0.2* ~ Vcc + 0.2 (max. 2.7V)

700

- 40 ~ +85

- 65 ~ +150

* -0.7V in case of AC (Pulse width 30ns)

<
=

DC ELECTRICAL CHARACTERISTICS

Symbol

VIH
VIL
VOH IOH= -0.1mA
VOL IOL=0.1mA

II
IO

Icc1

Icc2

Icc3

Icc4

Note 1: Direction for current flowing into IC is indicated as positive (no mark)
Note 2: Typical parameter indicates the value for the center of distribution at 2.0V, and not 100% tested.

Parameter

High-level input voltage
Low-level input voltage

High-level output voltage

Low-level output voltage
Input leakage current

Output leakage current
Active supply current

( AC,MOS level )
Active supply current

( AC,TTL level )

Stand by supply current
( AC,MOS level )

Stand by supply current
( AC,TTL level )

Conditions

VI =0 ~ Vcc

BC1 and BC2=VIH or S1=VIH or S2=VIL or OE=VIH, VI/O=0 ~ Vcc
BC1 and BC2 0.2V, S1 0.2V, S2 Vcc-0.2V

other inputs 0.2V or Vcc-0.2V
Output - open (duty 100%)

BC1 and BC2=VIL , S1=V IL ,S2=VIH
other pins =V IH or VIL
Output - open (duty 100%)

S1 Vcc - 0.2V,
S2 Vcc - 0.2V,

other inputs = 0 ~ Vcc

S2 0.2V,

BC1 and BC2 Vcc - 0.2V

S1 0.2V, S2 Vcc - 0.2V

BC1 and BC2=VIH or S1=VIH or S2=VIL

Other inputs= 0 ~ Vcc

=

f= 1MHz

f= 1MHz

~ +25°C -
~ +40°C
~ +70°C

* -0.7V in case of AC (Pulse width 30ns)

0.7 x Vcc

-0.2 *

1.3

-

-

Limits

MaxTypMin

Vcc+0.2

0.4

0.2
±1

±1

-

-

1.5

-

-

0.5

3020

3

3020

31.5
2

1 4

-

-~ +85°C

-

-

-

30

0.5

V

mW

°C
°C

Units

<
=

V

µA

mA

µA

CAPACITANCE

Symbol

CI
CO

Parameter

Input capacitance

Output capacitance

VI=GND, VI=25mVrms, f=1MHz
VO=GND,VO=25mVrms, f=1MHz

Conditions

Min

MITSUBISHI ELECTRIC

Limits

Max

Units

pF