Mitsubishi M5M5256DVP-15VLL-I, M5M5256DVP-12VXL-I, M5M5256DVP-12VLL-I, M5M5256DVP-10VXL-I, M5M5256DVP-10VLL-I Datasheet

'97.4.7

MITSUBISHI LSIs

M5M5256DFP,VP,RV -10VLL-I,-12VLL-I,-15VLL-I,

-10VXL-I,-12VXL-I,-15VXL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION

The M5M5256DFP,VP,RV is 262,144-bit CMOS static RAMs
organized as 32,768-words by 8-bits which is fabricated using
high-performance 3 polysilicon CMOS technology. The use of
resistive load NMOS cells and CMOS periphery results in a high
density and low power static RAM. Stand-by current is small
enough for battery back-up application. It is ideal for the memory
systems which require simple interface.
Especially the M5M5256DVP,RV are packaged in a 28-pin thin
small outline package.Two types of devices are available,
M5M5256DVP(normal lead bend type package),
M5M5256DRV(reverse lead bend type package). Using both types of
devices, it becomes very easy to design a printed circuit board.

FEATURE

Type

M5M5256DFP,VP,RV-10VLL
M5M5256DFP,VP,RV-12VLL
M5M5256DFP,VP,RV-15VLL

M5M5256DFP,VP,RV-10VXL 100ns
M5M5256DFP,VP,RV-12VXL
M5M5256DFP,VP,RV-15VXL

•Single +2.7~3.6V power supply

•No clocks, no refresh

•Data-Hold on +2.0V power supply

•Directly TTL compatible : all inputs and outputs

•Three-state outputs : OR-tie capability

•/OE prevents data contention in the I/O bus

•Common Data I/O

•Battery backup capability

•Low stand-by current··········0.05µA(typ.)

Access
time

Power supply current

(max)
100ns
120ns
150ns

120ns
150ns

Active

(max)

20mA

(Vcc=3.6V)

Stand-by

(max)

24µA

(Vcc=3.6V)

4.8µA

(Vcc=3.6V)

0.05µA

(Vcc=3.0V,
Typical)

PACKAGE

M5M5256DFP : 28 pin 450 mil SOP
M5M5256DVP,RV : 28pin 8 X 13.4 mm TSOP

2

APPLICATION

Small capacity memory units

PIN CONFIGURATION (TOP VIEW)

A14
A12

A5
A4

A3

A0
DQ1
DQ2

GND

22
23

27

1
2

3
4 A6
5 A5
6 A4
7 A3

7
6

5
4
3
2
1

28

27
26
25
24
23
22

1
2

3A7
4A6
5
6
7
8A2
9A1

10
11
12
13DQ3

14

Outline 28P2W-C (DFP)

/OE

A11
A924
A825
A1326

/W

Vcc28
A14

A12
A7

Outline 28P2C-A (DVP)

A3
A4
A5
A6
A7
A12
A14

/W
A13
A8
A9
A11
/OE

Outline 28P2C-B (DRV)

- I

M5M5256DVP

- I

M5M5256DRV

- I

M5M5256DFP

Vcc

28

/W

27
26

A13
A8

25
24 A9

A11

23
22 /OE
21

A10

20

/S

19

DQ8

18 DQ7

DQ6

17

DQ5

16

DQ4

15

A10

DQ8
DQ7 18
DQ6 17
DQ5 16

DQ415

GND

DQ2
DQ1

A0
A1

A2
A1

A0
DQ1
DQ2
DQ3

GND

DQ4Vcc
DQ5
DQ6
DQ7
DQ8

/S

A10

/S

21
20

19

14
13DQ3
12
11
10

9
8A2

8

9
10
11
12
13
14
15

16
17
18
19

20
21

MITSUBISHI
ELECTRIC

1

'97.4.7

M5M5256DFP,VP,RV -10VLL-I,-12VLL-I,-15VLL-I,

-10VXL-I,-12VXL-I,-15VXL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

FUNCTION

The operation mode of the M5M5256DP,KP,FP,VP,RV is
determined by a combination of the device control inputs /S,
/W and /OE. Each mode is summarized in the function table.
A write cycle is executed whenever the low level /W
overlaps with the low level /S. The address must be set up
before the write cycle and must be stable during the entire
cycle. The data is latched into a cell on the trailing edge of
/W, /S, whichever occurs first, requiring the set-up and hold
time relative to these edge to be maintained. The output
enable /OE directly controls the output stage. Setting the
/OE at a high level,the output stage is in a high-impedance
state, and the data bus contention problem in the write cycle
is eliminated.

FUNCTION TABLE

A read cycle is executed by setting /W at a high level and
/OE at a low level while /S are in an active state.
When setting /S at a high level, the chip is in a
non-selectable mode in which both reading and writing are
disabled. In this mode, the output stage is in a
high-impedance state, allowing OR-tie with other chips and
memory expansion by /S. The power supply current is
reduced as low as the stand-by current which is specified
as Icc3 or Icc4, and the memory data can be held at +2V
power supply, enabling battery back-up operation during
power failure or power-down operation in the non-selected
mode.

MITSUBISHI LSIs

/S /W /OE

H
L

L
L

BLOCK DIAGRAM

A 8
A 13
A 14
A 12
A 7
A 6
A 5

INPUT

INPUT

INPUT

A 4
A 3

A 2
A 1
A 0
A 10
A 11
A 9

/W

/S

/OE

ADDRESS
INPUT

WRITE CONTROL

CHIP SELECT

OUTPUT ENABLE

X X
L X

H
H

25
26

1
2

2
3
4
5
6
7

8

9
10
21
23
24

27

20

22

Non selection

L
H

BUFFER

ADDRESS INPUT

BUFFER

ADDRESS INPUT

Mode DQ Icc

Stand-by

Active
Active
Active

SENSE ANPLIFIER

Write
Read

ROW DECODER

COLUMN

DECODER

High-impedance

DIN

DOUT

High-impedance

32768 WORD

X 8BIT

(512 ROWS X

512 COLUMNS)

CLOCK

GENERATOR

OUTPUT BUFFER

BUFFER

DATA INPUT

11

DQ1

12

DQ2

13

DQ3

15

DQ4

DATA I/O

DQ5

16

DQ6

17
18

DQ7
DQ8

19

VCC

28

(3V)
GND

14

(0V)

MITSUBISHI
ELECTRIC

2

'97.4.7

MITSUBISHI LSIs

M5M5256DFP,VP,RV -10VLL-I,-12VLL-I,-15VLL-I,

-10VXL-I,-12VXL-I,-15VXL-I

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

ABSOLUTE MAXIMUM RATINGS

Symbol
Vcc

VI
VO

Pd
Topr
Tstg

* -3.0V in case of AC ( Pulse width ≤ 30ns )

Supply voltage
Input voltage

Output voltage
Power dissipation
Operating temperature
Storage temperature

DC ELECTRICAL CHARACTERISTICS (Ta=-40~85°C, Vcc=2.7~3.6V, unless otherwise noted)

Parameter

Conditions

With respect to GND

Ta=25°C 700

Ratings

-0.3*~4.6

-0.3*~Vcc+0.3

(Max 4.6)

0~Vcc

-40~85

-65~150

Unit

V
V
V

mW

°C
°C

Symbol Parameter

VIH High-level input voltage

VIL Low-level input voltage
VOH1 High-level output voltage 1 IOH=-0.5mA

VOH2 High-level output voltage 2 IOH=-0.05mA
VOL Low-level output voltage IOL=1mA

II
IO Output current in off-state

Icc1

Icc2

Icc3 Stand-by current

Input current VI=0~Vcc

/S=VIH or or /OE=VIH,
VI/O=0~Vcc

Active supply current

(AC, MOS level )

Active supply current

(AC, TTL level )

/S≤0.2V,
Other inputs<0.2V or >Vcc-0.2V
Output-open Min. cycle

/S=VIL,
other inputs=VIH or VIL
Output-open Min. cycle

/S≥Vcc-0.2V,
other inputs=0~Vcc

Test conditions

Min.
cycle

1MHz

Min.
cycle

1MHz

-VLL

-VXL

2.0

-0.3*

2.4

Vcc

-0.5

Limits

0.05

MaxTypMin

Vcc

+0.3

0.6

0.4

±1
±1

2011

2011

24

4.8

Unit

V
V

V
V
V

uA
uA

mA

31.5

mA

31.5

uA

Stand-by currentIcc4

* -3.0V in case of AC ( Pulse width ≤ 30ns )

/S=VIH,other inputs=0~Vcc

CAPACITANCE (Ta=-40~85°C, Vcc=2.7~3.6V, unless otherwise noted)

Symbol Parameter Test conditions

CI
CO

Note 0: Direction for current flowing into an IC is positive (no mark).
1: Typical value is one at Ta = 25°C.
2: CI, CO are periodically sampled and are not 100% tested.

Input capacitance

Output capacitance

VI=GND, VI=25mVrms, f=1MHz
VO=GND,VO=25mVrms, f=1MHz

MITSUBISHI
ELECTRIC

Limits

TypMin

0.33

Max

6
8

mA

Unit

pF

pF

3