Mitsubishi M5M51R16AWG-10H, M5M51R16AWG-15L, M5M51R16AWG-15H, M5M51R16AWG-12L, M5M51R16AWG-12H Datasheet

MITSUBISHI LSIs

FEATURE

NC : NO CONNECTION

M5M51R16AWG -10L, -12L, -15L,

-10H, -12H, -15H

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

DESCRIPTION

The M5M51R16AWG is a 1048576-bit CMOS static RAM
organized as 65536 words by 16-bits, which are fabricated using
high-performance CMOS technology. The use of CMOS cells and
periphery results in a high density and low power static RAM.
The M5M51R16AWG can achieve low stand-by current and low
operation current and ideal for the battery back-up application.
The M5M51R16AWG is packaged in a 48-pin chip scale package
which is a high reliability and high density surface mount device
(SMD). Using this type of devices, it becomes very easy to design
a small system.
The M5M51R16AWG is fully compatible with the M5M51R16WG.

Power supply current

Type name

Access time

(max)

Active
(max)

Stand-by

(max)

M5M51R16AWG- 10L 100ns
M5M51R16AWG- 12L 120ns
M5M51R16AWG- 15L 150ns

M5M51R16AWG- 10H 100ns
M5M51R16AWG- 12H 120ns

10mA

(1MHz)

4µA

2µA

M5M51R16AWG- 15H 150ns

PIN CONFIGURATION (TOP VIEW)

1 2 3 4 5 6

A

A3

OEBC1

A6

A0

B

DQ16

BC2

A7

S

A2

C

A1

DQ15DQ14

A5

DQ2

D

DQ13

GND

NC

A4

DQ4

E

DQ12

NC

GNDVCC

DQ5

GND

F

DQ11 DQ10

A9

A14

DQ7

G

DQ9

NC

A10

A13

W

H

A8

NC NC

A11

A12

A15

PIN CONFIGURATION (BOTTOM VIEW)

NC

DQ1

DQ3

VCC

DQ6

DQ8

• Single +1.8V~2.7V power supply

• Low power down current 0.05µA(typ.)

• Directly TTL compatible : All inputs and outputs

• Easy memory expansion and power down by S,BC1 and BC2

• Data hold on +1.0V power supply

• Three-state outputs : OR-tie capability

• OE prevents data contention in the I/O bus

• Common data I/O

• Separate control of lower and upper bytes by BC1 and BC2

• Package
48-pin chip scale package(CSP)
Ball pitch : 0.75mm
Package size: 7.0mm x 8.5mm

APPLICATION

Small capacity memory units.

6 5 4 3 2 1

A

A3

A0

NC

B

DQ1

A2

S

C

DQ3

DQ2

A1

D

DQ4

VCC

A4

E

NC

DQ5

GND

F

DQ6

DQ7

A14

G

DQ8

H

W

A15

A13

A12

Outline 48FJA

A6

A7

A5

NC

GND

A9

A10

A11

OE

BC1

BC2

DQ16

DQ15 DQ14

DQ13

GND

DQ12

VCC

DQ11DQ10

DQ9

NC

A8

NCNC

Aug.1. 1998

MITSUBISHI
ELECTRIC

1

FUNCTION

(High-Z=High-impedance)

Mode

DQ1~8

DQ9~16

Icc

Non selection

LXXXX

High-Z

XHHXX

High-Z

Stand-by

Upper-Byte Write

HHLLX

Din

Active

Upper-Byte Read

LLHigh-Z

Dout

Active

HLH

High-Z

Active

Lower-Byte Write

LHLXHigh-Z

Din

Active

Lower-Byte Read

LHX

High-Z

Dout

Active

LHH

High-Z

High-Z

Stand-by

Word Write

HLLLX

Din

Word Read

LLL

Dout

Active

HLL

High-Z

High-Z

Active

Din

DoutWOESBC1

BC2LLLX

Output disable

Non selection

(Lower-Byte Non selection)

(Lower-Byte Non selection)

(Upper-Byte Non selection)

(Upper-Byte Non selection)

65536 WORDS x16 BITS

ADDRESS

CHIP SELECT

INPUT

BC2

BC1

BYTE

CONTROL

INPUTS

WRITE CONTROL

INPUT

OUTPUT ENABLE

INPUT

DATA

INPUTS/

OUTPUTS

INPUTS

A4D4A3A4A2B4A1C4A0A5A15H5A14F4A13G4A12H4A8H2A9F3A10G3A11H3A7B3A5C3A6A3B5G5A2B2WOESA1B6

DQ1C5DQ2C6DQ3D5DQ4E5DQ5F6DQ6F5DQ7G6DQ8G1DQ9F2DQ10F1DQ11E2DQ12D2DQ13C1DQ14C2DQ15B1DQ16E1VccE6GND

(0V)D1GND

(0V)

Vcc

D6E3GND

(0V)

The operation mode of the M5M51R16A series are
determined by a combination of the device control
inputs S, W, OE, BC1 and BC2. Each mode is
summarized in the function table.
A write cycle is executed whenever the low level W
overlaps with the low level BC1 and/or BC2 and the
low level S. The address must be set up before the
write cycle and must be stable during the entire cycle.
The data is latched into a cell on the trailing edge of
W, BC1, BC2 or S, whichever occurs first, requiring
the set-up and hold time relative to these edge to be
maintained. The output enable input OE directly
controls the output stage. Setting the OE at a high
level, the output stage is in a high-impedance state,
and the data bus contention problem in the write cycle
is eliminated.
A read cycle is executed by setting W at a high level
and OE at a low level while BC1 and/or BC2 and S
are in an active state. (BC1 and/or BC2=L, S=L)
When setting BC1 at a high level and the other pins
are in an active state, upper-Byte are in a selectable
mode in which both reading and writing are enabled,
and lower -Byte are in a non-selectable mode. And
when setting BC2 at a high level and the other pins
are in an active state, lower-Byte are in a selectable
mode in which both reading and writing are enabled,
and upper -Byte are in a non-selectable mode.

MITSUBISHI LSIs

M5M51R16AWG -10L, -12L, -15L,

-10H, -12H, -15H

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

When setting BC1 and BC2 at a high level or S at
a high level, the chips are in a non-selectable mode in
which both reading and writing are disabled.
In this mode, the output stage is in a high-impedance
state, allowing OR -tie with other chips and memory
expansion by BC1, BC2 and S. S, BC1 and BC2
control the power down feature. When S, BC1 and
BC2 go high, the power supply current is reduced as
low as the stand-by current which is specified as Icc3
or Icc4, and the memory data can be held at +1.0V
power supply, enabling battery back-up operation
during power-failure or power-down operation in the
non-selected mode.

FUNCTION TABLE

BLOCK DIAGRAM

( 512 ROWS
x 256 COLUMNS
x 8 BLOCKS )

CLOCK
GENERATOR

Aug.1. 1998

MITSUBISHI
ELECTRIC

2

M5M51R16AWG -10L, -12L, -15L,

and

-10H, -12H, -15H

1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Vcc

VI
Vo
Pd

Topr
Tstg

* -1.0V in case of AC ( Pulse width ≤ 30ns )

DC ELECTRICAL CHARACTERISTICS ( Ta = 0 ~ 70°C, Vcc = 1.8V~2.7V, unless otherwise noted )

Symbol Parameter

VIH
VIL

VOH

VOL

II

Io

ICC1W
ICC2W
ICC1B
ICC2B

ICC3

ICC4

Output current in off-state

Word operation(16bit)

Active supply current

Byte operation(8bit)

Active supply current

Stand-by current

Parameter

Supply voltage
Input voltage
Output voltage
Power dissipation
Operating temperature
Storage temperature

High-level input voltage
Low-level input voltage

High-level output voltage
Low-level output voltage
Input current

(AC,TTL level)

(AC,TTL level)

Stand-by current

Conditions

With respect to GND

Ta=25°C

IOH = -0.1mA
IOL = 0.1mA

VI =0 ~Vcc

BC1 and BC2 = VIH or S = VIH or
OE = VIH, VI/O = 0~ Vcc

BC1 and BC2 = VIL, S = VIL
other inputs = VIH or VIL

Output-open(duty 100%)
(BC1 = VIH and BC2 = VIL) or (BC1 = VIL

BC2 = VIH) , S = VIL ,other inputs = VIH or VIL

Output-open(duty 100%)

1) S≥Vcc-0.2V, other inputs = 0~Vcc

2) BC1 and BC2 ≥Vcc-0.2V,S≤0.2V,
other inputs = 0~Vcc

BC1 and BC2 = VIH or S = VIH,
other inputs = 0~Vcc

-0.2* ~ Vcc+0.2(max.4.6V)

Conditions

Ratings

-0.2 ~ 4.6

0 ~ Vcc

1

0 ~ 70

-65 ~150

Min

cycle

1MHz

Min

cycle

1MHz

-L

-H

Unit

V
V

V
W
°C
°C

Min

0.7 x Vcc

-0.2*

1.6

MITSUBISHI LSIs

Limits

Typ

Max

Vcc+0.2V

0.4

0.2
±1

±1

15

7

10

25

10

5

8
4
2

0.3

Unit

V
V

V
V

µA

µA

mA
mA
mA15

mA

µA
µA

mA

* -1.0V in case of AC ( Pulse width ≤ 30ns )

CAPACITANCE ( Ta = 0 ~ 70°C, Vcc = 1.8V~2.7V, unless otherwise noted )

Symbol Parameter Conditions

Input capacitance

CI

Output capacitance

CO

Note 1: Direction for current flowing into an IC is positive (no mark).
Note 2: Typical value is Vcc = 2.0V, Ta = 25°C
Note 3: CI,CO are periodically sampled and are not 100% tested.

Aug.1. 1998

VI=GND, Vi=25mVrms, f=1MHz
VO=GND, Vo=25mVrms, f=1MHz

MITSUBISHI
ELECTRIC

Min

Typ

Limits

Max

6

10

Unit

pF
pF

3