PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI Pch POWER MOSFET
FX20VSJ-3
HIGH-SPEED SWITCHING USE
FX20VSJ-3
4V DRIVE
•
VDSS ............................................................ –150V
•
rDS (ON) (MAX) ................................................0.29Ω
•
ID ................................................................... –20A
•
Integrated Fast Recovery Diode (TYP.) ........ 100ns
•
OUTLINE DRAWING Dimensions in mm
4
+0.3
3.0
–0.5
1
1
10.5 max
5
2
1
3
2
4.5
0.5
1.3
+0.3
0
–0
(1.5)
1.5 max
9.8 ± 0.5
8.6 ± 0.3
1.5 max
B
0.8
4.5
3
2.6 ± 0.4
1
GATE
2
DRAIN
3
SOURCE
4
DRAIN
4
TO-220S
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
VGS = 0V
VDS = 0V
L = 30µH
Typical value
–150
±20
–20
–80
–20
–20
–80
70
–55 ~ +150
–55 ~ +150
1.2
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = –1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –150V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –10A, VGS = –10V
ID = –10A, VGS = –4V
ID = –10A, VGS = –10V
ID = –10A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –80V, ID = –10A, VGS = –10V, RGEN = RGS = 50Ω
IS = –10A, VGS = 0V
Channel to case
IS = –20A, dis/dt = 100A/µs
MITSUBISHI Pch POWER MOSFET
FX20VSJ-3
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
–150
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–1.5
0.23
0.25
–2.3
17.5
4470
248
115
15
42
273
114
–1.0
—
100
—
±0.1
–0.1
–2.0
0.29
0.32
–2.9
—
—
—
—
—
—
—
—
–1.5
1.79
—
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
100
80
60
40
20
POWER DISSIPATION PD (W)
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
–20
–16
–12
VGS =
–10V
(TYPICAL)
–6V
–4V
–8V
C (°C)
TC = 25°C
Pulse Test
–3V
MAXIMUM SAFE OPERATING AREA
–2
2
–10
–7
–5
–3
–2
1
–10
–7
–5
–3
–2
0
–10
DRAIN CURRENT ID (A)
–7
–5
TC = 25°C
–3
Single Pulse
–2
–2 –3 –5 –7 –2
–10
1
–2
–3 –5–7 –2
–10
2
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
–10
VGS = –10V
–8V
–8
–4V
–3V
–6V
–6
tw = 10µs
100µs
1ms
10ms
DC
–3 –5–7
TC = 25°C
Pulse Test
–10
DS (V)
3
–8
–4
DRAIN CURRENT ID (A)
0
0 –2–4–6–8–10
PD = 70W
DRAIN-SOURCE VOLTAGE VDS (V)
–2.5V
–4
–2
DRAIN CURRENT ID (A)
0
0 –1.0 –2.0 –3.0 –4.0 –5.0
DRAIN-SOURCE VOLTAGE VDS (V)
–2.5V
Jan.1999
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI Pch POWER MOSFET
FX20VSJ-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
–10
TC = 25°C
Pulse Test
–8
(V)
–6
DS (ON)
–4
VOLTAGE V
–2
DRAIN-SOURCE ON-STATE
0
0 –2–4–6–8–10
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
–50
TC = 25°C
DS
= –10V
V
Pulse Test
–40
(A)
D
–30
–20
–10
DRAIN CURRENT I
ID = –30A
–20A
–10A
GS
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
TC = 25°C
Pulse Test
0.4
(Ω)
0.3
DS (ON)
0.2
0.1
RESISTANCE r
DRAIN-SOURCE ON-STATE
0
0
–10
–2 –3 –5
–7
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
2
10
VDS = –10V
7
Pulse Test
5
(S)
fs
10
ADMITTANCE y
FORWARD TRANSFER
TC = 25°C
3
2
1
7
5
3
2
75°C
125°C
VGS = –4V
1
–10
–2 –3 –5
D
(A)
–10V
2
–10
–7
0
0 –2–4–6–8–10
GATE-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE
4
10
7
5
3
2
3
10
7
5
3
2
2
10
CAPACITANCE
7
Ciss, Coss, Crss (pF)
5
TCh = 25°C
3
f = 1MH
2
VGS = 0V
1
10
0
–10
–2 –3 –5 –7 –2 –3 –5 –7
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
Z
1
–10
GS
DS
(V)
Ciss
Coss
Crss
(V)
–10
0
10
0
–10
–2 –3 –5 –7 –2 –3 –5 –7
DRAIN CURRENT I
–10
1
D
(A)
–10
2
SWITCHING CHARACTERISTICS
(TYPICAL)
3
10
7
5
3
2
2
10
7
5
3
SWITCHING TIME (ns)
2
1
10
2
–10
0
–2 –3 –5 –7 –2 –3 –5 –7–7
TCh = 25°C
DD
= –80V
V
GS
= –10V
V
GEN
= RGS = 50Ω
R
1
–10
t
t
t
t
d(off)
f
r
d(on)
DRAIN CURRENT ID (A)
Jan.1999
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
MITSUBISHI Pch POWER MOSFET
FX20VSJ-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
–10
TCh = 25°C
D
= –20A
I
(V)
GS
–8
VDS = –50V
–6
–80V
–100V
–4
–2
GATE-SOURCE VOLTAGE V
0
0 20406080100
GATE CHARGE Q
g
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
1
10
VGS = –10V
7
DS (ON)
DRAIN-SOURCE ON-STATE RESISTANCE r
D
= 1/2I
I
DS (ON)
5
Pulse Test
3
2
0
10
7
5
3
2
–1
10
–50 0 50 100 150
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
(TYPICAL)
D
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–20
TC = 25°C
Pulse Test
–16
(A)
S
–12
–8
–4
SOURCE CURRENT I
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
–4.0
VDS = –10V
D
= –1mA
I
–3.2
(V)
–2.4
GS (th)
–1.6
VOLTAGE V
–0.8
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
TC = 125°C
75°C
25°C
SD
(V)
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
(BR) DSS
(BR) DSS
1.4
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
D
= –1mA
I
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
TRANSIENT THERMAL IMPEDANCE
(°C/W)
1
10
7
(ch–c)
5
th
3
D = 1.0
2
0.5
0
10
7
0.2
5
3
10
10
2
–1
7
5
3
2
–2
10
0.1
0.05
0.02
0.01
Single Pulse
–4
23 57 23 57 23 57 23 57
10
TRANSIENT THERMAL IMPEDANCE Z
CHARACTERISTICS
–3
10
–2
PULSE WIDTH t
10
–1
P
DM
tw
T
tw
D
=
T
0
10
w
(s)
23 57
10
1
23 57
10
2
Jan.1999
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