Mitsubishi Electric Corporation Semiconductor Group FU-318SAP-M6, FU-318AP-M6 Datasheet
MITSUBISHI (OPTICAL DEVICES)
FU-318AP-M6/FU-318SAP-M6
InGaAs APD MODULE FOR LONG WAVELENGTH BAND
DESCRIPTION
The FU-318AP-M6/318SAP-M6 series avalanche
photodiode(APD) modules are designed for use in
fiber testing equipment and high-speed, long haul
optical communication systems.
The c oaxial pakage contains an InGaAs APD coupled
into either singlemode or multimode fiber pigtail.
FEATURES
High-responsivity (0.8A/W at 1300nm)
High-speed response (fc=3GHz)
APPLICATION
Fiber testing equipment(OTDRs)
Long haul optical communication systems
ABSOLUTE MAXIMUM RATINGS (Tc=25°C)
Parameter Symbol Conditions Rating Unit
Reverse current (CW) Ir - 500
Forward current (CW) If - 2 mA
Operating case temperature Tc - -40~+85
Storage temperature Tstg - -40~+85
m
A
°
C
°
C
MITSUBISHI (OPTICAL DEVICES)
FU-318AP-M6/FU-318SAP-M6
InGaAs APD MODULE FOR LONG WAVELENGTH BAND
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=-25°C,l=1.3mm unless otherwise noted)
Parameter Symbol Test Conditions Limits Unit
Min. Typ. Max.
Detection range - - 1000 - 1600 nm
Responsivity(Note 1) R M=1(Note 2) 0.75 0.8 - A/W
l
=1.55mm,M=1(Note 2)
Breakdown voltage Vbr
Temp.coefficient of Vbr(note 4)
Dark current Id
Excess noise factor F M=10(Note 2) - 5 - Minmum multiplication Mmin
Cut-off frequency (-3dB) fc
Capacitance Ct M=10,f=1MHz - 0.6 1 pF
Note 1. Measured by single-mode fiber : SM9.5/125
Note 2. M : Multiplication ratio
Note 3. Ipo : Photo current with an incident opical power
Note 4. b=Vbr(25°C+DT)-Vbr(25°C)/Vbr(25°C)*DT ´ 100 [%/°C
b
Id=100mA
Id=100mA,Tc=-40~85°C
Vr=0.9Vbr,Tc=25°C
Vr=0.9Vbr,Tc=70°C
Vr=0.9Vbr,Tc=85°C
Ipo=1mA,Vr=V(@Id=1mA)
(Note 3)
M=10,Rl=50W(Note 2)
]
0.85 0.9 50 - 100 V
0.1 0.17 0.25
- - 60 nA
- - 700
- - 1000
30---
1 3 - GHz
%/°C
OPTICAL FIBER SPECIFICATION
Parameter Limits Unit
FU-318AP-M6 FU-318SAP-M6
Type GI SM Core dia.
Mode filed dia. N.A. 0.2 - -
Cladding dia.
Jacket dia. 0.9 typ. 0.9 typ. mm
50±1
125±3 125±2
-
9.5±1
m
m
m
m
m
m
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