Datasheet FTS1003 Datasheet (SANYO)

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6154A

FTS1003

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

0.425

Features

· Low ON resistance.

· 2.5V drive.

· Mounting height 1.1mm.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)eslup(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

Electrical Characteristics at Ta = 25˚C

retemaraPlobmySsnoitidnoC

egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatS

ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

Marking : S1003 Continued on next page.

SSD
SSG

D

R
R

WP ≤ elcycytud,sµ01 ≤ %151–A

PD

Mounted on a ceramic board (1000mm2×0.8mm)

D

I

SSD)RB(

D

V

SSD
SSG

)ffo(SG

1IDV,A3–=

)no(SD

2IDV,A1–=

)no(SD

SD

V

SG

V

SD

SD
SD
SD

Package Dimensions

unit:mm

2147A

4.5 0.95

(0.95)

6.4

[FTS1003]

0.5

1 : Drain
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Source
7 : Source
8 : Drain

0.125

SANYO : TSSOP8

sgnitaR

nimpytxam

02–V
01±V
3–A

3.1W

˚C
˚C

0.65

V,Am1–=

0=02–V

SG

V,V02–=

0=01–Aµ

SG

V,V8±=

0=01±Aµ

SD

I,V01–=

D

A3–=58S

D

V4–=0709mΩ

SG
SG

3.0

85

14

0.25

Am1–=4.0–4.1–V

V5.2–=501441mΩ
zHM1=f,V01–=006Fp
zHM1=f,V01–=003Fp
zHM1=f,V01–=051Fp

tinU

30100TS (KOTO) TA-2125 No.6154-1/4

FTS1003

Continued from preceding page.

retemaraPlobmySsnoitidnoC

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V01–=

egrahCecruoS-ot-etaGsgQVSDV,V01–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=

egatloVdrawroFedoiDV

)no(d

r

)ffo(d

f

I

V,A3–=

DS

S

0=0.1–5.1–V

SG

Switching Time Test Circuit

tiucriCtseTdeificepseeS51sn
tiucriCtseTdeificepseeS041sn
tiucriCtseTdeificepseeS08sn
tiucriCtseTdeificepseeS58sn
I,V01–=

SG

I,V01–=

SG

I,V01–=

SG

sgnitaR

nimpytxam

A3–=42Cn

D

A3–=3Cn

D

A3–=6Cn

D

tinU

-

3.5

-

3.0

-

2.5

–A

D

-

2.0

-

1.5

-

1.0

Drain Current, I

-

0.5

2V

-

-

2.5V

-

3V

-

3.5V

ID-

VDD=–10V

D

S

V

DS

ID=–3A
RL=3.3Ω

FTS1003

V

IN

0V

–4V

V

IN

PW=10µs
D.C.≤1%

G

P.G

-6V-

8V

-

0

-

0.1-0.2-0.3-0.4-0.5-0.6-0.7-0.8-0.9-1.0

0

50Ω

5V-4V

Drain-to-Source Voltage, VDS–V

V

V

OUT

GS

I

-

V

-

6

VDS=-10V

-

5

–A

-

4

D

-

3

-

1.5V

-

=

2

Drain Current, I

-

1

0

0

-

0.5

D

-

1.0

75°C

GS

-

1.5

25°C

Ta=

-

25°C

-

2.0

-

2.5

Gate-to-Source Voltage, VGS–V

y

|

fs

|

-

I

100

7
5

3

fs|–S

y

2

10

7
5

3
2

1.0
7
5

3
2

Forward Transfer Admittance, |

0.1

23 57 23 57 23 57

-

0.01

-

0.1

D

-

1.0

Ta=

75°C

-

VDS=-10V

25°C

25°C

Static Drain-to-Source

-

10

–mΩ

DS(on)

On-State Resistance, R

200

180

160

ID=-1A

140

120

100

80

60

40

20

0

-10-2-3-4-5-6-7-8-9-

Drain Current, ID–A

R

DS(on)

ID=-3A

Gate-to-Source Voltage, VGS–V

-

V

GS

Ta=25°C

10

No.6154-2/4

R

200

180

160

–mΩ

140

120

DS(on)

100

80

60

40

20

Static Drain-to-Source

On-State Resistance, R

0

-20-40-

60 40 60 80 100 120 160140

DS(on)

I

D

=

I

D

020

=

-

3A,V

-

1A,V

GS

GS

-

=

=

Ambient Temperature, Ta – ˚C

10000

Ciss, Coss, Crss – pF

1000

100

7
5

3
2

7
5

3
2

7
5

3
2

10

Ciss,Coss,Crss-V

-4-

20

-6-8-10-12-14-16-18-

Drain-to-Source Voltage, VDS– V Total Gate Charge, Qg – nC

2.5V

-

4V

-

Ta

DS

FTS1003

f=1MHz

Ciss

Coss
Crss

20

-

10

–A

-

1.0

F

-

0.1

Forward Current, I

-

0.01

V

GS –

Gate-to-Source Voltage, V

VGS=0

7
5

3
2

7
5

3
2

7
5

3
2

0

-

10

VDS=-10V

-

9

ID=-3A

-

8

-

7

-

6

-

5

-

4

-

3

-

2

-

1
0

IF-

V

SD

°C

25

25°C

-

Ta=75°C

-

0.2-0.4-0.6

-

0.8

Diode Forward Voltage, VSD–V

V

-

GS

6 12162024284 101418220

Qg

-

1.0

-

1.4

-

1.2

1000

VDD=-10V

7
5

VGS=

-

3
2

100

7
5

3
2

10

7
5

Switching Time, SW Time – ns

3
2

1.0

723572357

-

0.1

SW Time

4V

t

(off)

d

td(on)

-

1.0

-

I

D

t

r

t

f

Drain Current, ID–A

P

-

1.6

1.4

–W

D

1.2

1.0

0.8

0.6

D

Mounted on a ceramic board (1000mm

Ta

3

IDP=-15A

2

-

10

7
5

3

–A

2

D

-

1.0

,I

7
5

3

Operation in this area

2

-

0.1

Drain Current

-

-

10

0.01

is limited by RDS(on).

7
5

Ta=25°C

3

Single pulse

2

Mounted on a ceramic board (1000mm2×0.8mm)

-

0.01

A S O

ID=-3A

DC operation

23 5723 57 23 2357

-

0.1

-

1.0

100ms

10ms

100µs

1ms

-

10

Drain-to-Source Voltage, VDS–V

0.4

0.2

Allowable Power Dissipation, P

0

20 6040 80 120100 140 1600

2

×0.8mm)

Ambient Temperature, Ta – ˚C

No.6154-3/4

FTS1003

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.

PS No.6154-4/4