Mitsubishi Electric Corporation Semiconductor Group FS10ASJ-3 Datasheet
MITSUBISHI Nch POWER MOSFET
FS10ASJ-3
HIGH-SPEED SWITCHING USE
FS10ASJ-3
¡4V DRIVE
¡V
DSS ................................................................................150V
DS (ON) (MAX) ........................................................... 160mΩ
¡r
D ......................................................................................... 10A
¡I
¡Integrated Fast Recovery Diode (TYP.)
............. 90ns
OUTLINE DRAWING Dimensions in mm
0.9MAX.
2.3
q
6.5
5.0 ± 0.2
r
1.0
1.0MAX.
2.3
2.3
qwe
wr
e
10MAX.
5.5 ± 0.2
2.3MIN. 1.5 ± 0.2
q GATE
w DRAIN
e SOURCE
r DRAIN
0.5 ± 0.1
A
0.5 ± 0.2
0.8
MP-3
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Parameter Conditions Ratings Unit
GS = 0V
V
DS = 0V
V
L = 100µH
Typical value
150
±20
10
40
10
10
40
35
–55 ~ +150
–55 ~ +150
0.26
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
iss
C
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
GS = ±20V, VDS = 0V
V
DS = 150V, VGS = 0V
V
D = 1mA, VDS = 10V
I
D = 5A, VGS = 10V
I
D = 5A, VGS = 4V
I
D = 5A, VGS = 10V
I
D = 5A, VDS = 10V
I
V
DS = 10V, VGS = 0V, f = 1MHz
DD = 80V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
V
S = 5A, VGS = 0V
I
Channel to case
S = 10A, dis/dt = –100A/µs
I
MITSUBISHI Nch POWER MOSFET
FS10ASJ-3
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
150
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.5
120
125
0.60
18
1800
180
85
17
23
150
75
1.0
—
90
—
±0.1
0.1
2.0
160
165
0.80
—
—
—
—
—
—
—
—
1.5
3.57
—
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
50
(W)
40
D
30
20
10
POWER DISSIPATION P
0
0 20050 100 150
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
10
TC = 25°C
Pulse Test
8
(A)
D
6
(TYPICAL)
VGS = 10V 4V5V
C
(°C)
3V
MAXIMUM SAFE OPERATING AREA
3
2
2
10
7
(A)
5
D
3
2
1
10
7
5
3
2
DRAIN CURRENT I
0
10
7
TC = 25°C
5
Single Pulse
3
210
357 2 10
DC
1
357 2210
DRAIN-SOURCE VOLTAGE V
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 10V 4V5V 3V
(A)
D
5
TC = 25°C
Pulse Test
4
3
tw = 10ms
100ms
1ms
10ms
2
357
DS
3
(V)
2.5V
4
2
DRAIN CURRENT I
0
0 0.4 0.8 1.2 1.6 2.0
DRAIN-SOURCE VOLTAGE VDS (V)
2V
2
1
DRAIN CURRENT I
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
2V
Feb.1999
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