MITSUBISHI Nch POWER MOSFET
FK10SM-12
HIGH-SPEED SWITCHING USE
FK10SM-12
DSS ................................................................................600V
¡V
¡r
DS (ON) (MAX) ..............................................................1.18Ω
¡I
D ......................................................................................... 10A
¡Integrated Fast Recovery Diode (MAX.) ........150ns
OUTLINE DRAWING Dimensions in mm
4.5
1.5
4.4
0.6 2.8
2
1.0
5.45
q
15.9MAX.
r
φ 3.2
qwe
5.45
4
wr
e
5.0
2
4
q GATE
w DRAIN
e SOURCE
r DRAIN
20.0
19.5MIN.
TO-3P
APPLICATION
Servo motor drive, Robot, UPS, Inverter Fluorecent
lamp, etc.
MAXIMUM RATINGS (Tc = 25°C)
Parameter ConditionsSymbol Ratings Unit
VDSS
VGSS
ID
IDM
IS
ISM
PD
Tch
Tstg
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
—
VGS = 0V
VDS = 0V
Typical value
600
±30
10
30
10
30
150
–55 ~ +150
–55 ~ +150
4.8
V
V
A
A
A
A
W
°C
°C
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol UnitParameter Test conditions
V
(BR) DSS
V
(BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V , VDS = 0V
VDS = 600V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 5A, VGS = 10V, RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
IS = 10A, dis/dt = –100A/µs
MITSUBISHI Nch POWER MOSFET
FK10SM-12
HIGH-SPEED SWITCHING USE
Limits
Min. Typ. Max.
600
±30
—
—
2
—
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3
0.90
4.50
7.0
1500
170
25
25
35
130
45
1.5
—
—
—
—
±10
1.18
5.90
—
—
—
—
—
—
—
—
2.0
0.83
150
V
V
µA
mA
1
V
4
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
(W)
160
D
120
80
40
POWER DISSIPATION P
0
CASE TEMPERATURE T
C
(°C)
MAXIMUM SAFE OPERATING AREA
5
3
2
1
10
(A)
D
7
5
3
2
0
10
7
5
3
TC = 25°C
2
DRAIN CURRENT I
200150100500
10
–1
7
5
0
10
Single Pulse
23 5710
1
23 5710223 5710
DRAIN-SOURCE VOLTAGE V
DS
tw=10µs
100µs
1ms
10ms
DC
3
(V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10SM-12
HIGH-SPEED SWITCHING USE
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V
10V
TC = 25°C
Pulse Test
(A)
D
20
16
PD=
150W
12
8
4
DRAIN CURRENT I
0
0 1020304050
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
40
TC = 25°C
Pulse Test
32
(V)
6V
5V
4V
ID = 20A
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS
= 20V
(A)
D
10
8
TC = 25°C
Pulse Test
6
4
2
DRAIN CURRENT I
0
0 4 8 12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
TC = 25°C
Pulse Test
1.6
(Ω)
V
GS
= 10V
10V
6V
PD = 150W
20V
5V
4V
24
DS (ON)
16
VOLTAGE V
8
DRAIN-SOURCE ON-STATE
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
TRANSFER CHARACTERISTICS
(TYPICAL)
40
32
(A)
D
24
16
8
DRAIN CURRENT I
10A
GS
(V)
TC = 25°C
VDS=50V
Pulse Test
5A
1.2
DS (ON)
0.8
0.4
RESISTANCE r
DRAIN-SOURCE ON-STATE
0
–1
5710023 5710123 5710
2310
DRAIN CURRENT I
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
1
10
V
DS
= 10V
7
Pulse Test
5
(S)
3
fs
2
0
10
7
5
3
ADMITTANCE y
FORWARD TRANSFER
2
D
(A)
TC = 25°C
125°C
2
75°C
0
0 4 8 12 16 20
GATE-SOURCE VOLTAGE V
GS
(V)
–1
10
10–123 5710
DRAIN CURRENT I
0
23 5710
D
(A)
1
Feb.1999
DRAIN-SOURCE VOLTAGE
5
3
2
3
10
7
5
3
2
2
10
CAPACITANCE
7
5
Ciss, Coss, Crss (pF)
3
Tch = 25°C
2
f = 1MHz
GS
= 0V
V
1
10
23 5710
DRAIN-SOURCE VOLTAGE V
CAPACITANCE VS.
(TYPICAL)
0
23 5710
1
23 5710
Ciss
Coss
Crss
DS
2
(V)
23
MITSUBISHI Nch POWER MOSFET
HIGH-SPEED SWITCHING USE
SWITCHING CHARACTERISTICS
3
10
7
5
3
2
2
10
7
5
3
SWITCHING TIME (ns)
2
1
10
–1
23 5710
10
(TYPICAL)
t
t
DRAIN CURRENT ID (A)
d(off)
t
f
d(on)
t
r
FK10SM-12
Tch = 25°C
VDD = 200V
VGS = 10V
R
GEN
= R
GS
= 50Ω
0
23 5710
1
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
16
Tch = 25°C
ID = 10A
V
DS
= 100V
(V)
GS
200V
12
400V
8
4
GATE-SOURCE VOLTAGE V
0
0 20406080100
g
GATE CHARGE Q
(nC)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(t°C)
(25°C)
DS (ON)
DS (ON)
10
1
7
5
VGS = 10V
ID = 1/2I
Pulse Test
(TYPICAL)
D
3
2
0
10
7
5
3
2
–1
10
0
50 100 150 200 250
DRAIN-SOURCE ON-STATE RESISTANCE r
DRAIN-SOURCE ON-STATE RESISTANCE r
CHANNEL TEMPERATURE Tch (°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
VGS = 0V
Pulse Test
32
(A)
S
TC = 125°C
24
16
8
SOURCE CURRENT I
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE V
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
ID = 1mA
4.0
(V)
3.0
GS (th)
2.0
VOLTAGE V
1.0
GATE-SOURCE THRESHOLD
0
–50 0 50 100 150
CHANNEL TEMPERATURE Tch (°C)
25°C
75°C
SD
(V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FK10SM-12
HIGH-SPEED SWITCHING USE
BREAKDOWN VOLTAGE VS.
(t°C)
(25°C)
CHANNEL TEMPERATURE
(TYPICAL)
1.4
(BR) DSS
(BR) DSS
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0 50 100 150
DRAIN-SOURCE BREAKDOWN VOLTAGE V
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
DIODE REVERSE VS.
SOURCE CURRENT d
is/dt
CHARACTERISTIC
(TYPICAL)
(ns)
rr
10
5
3
t
rr
2
2
IS = 10A
GS
= 0V
V
DD
= 250V
V
7
5
3
2
I
rr
1
10
7
REVERSE RECOVERY TIME t
5
1
23 5710
10
Tch = 25°C
ch
= 150°C
T
2
23 5710
SOURCE CURRENT CHARACTERISTIC
3
10
d
is/dt
7
(ns)
rr
GS
= 0V
V
5
DD
= 250V
V
3
2
t
rr
2
10
7
5
3
2
REVERSE RECOVERY TIME t
1
10
0
10
TRANSIENT THERMAL IMPEDANCE
(°C/W)
1
10
(A)
7
rr
(ch–c)
5
th
3
2
0
D=1
10
7
0.5
5
3
0.2
2
0.1
–1
10
7
5
3
2
–2
10
REVERSE RECOVERY CURRENT I
10
–4
23 57
0.05
0.02
0.01
Single Pulse
–3
23 57 23 57 23 57
10
10
10
5
3
2
1
7
5
3
2
0
7
5
3
DIODE REVERSE VS.
(TYPICAL)
= –100A/µs
I
rr
Tch = 25°C
ch
= 150°C
T
23 5710
1
23 5710
SOURCE CURRENT IS (A)
CHARACTERISTICS
10
–2
10
–1
10023 57
P
DM
tw
D=
T
tw
T
2
10
7
5
3
2
1
10
7
5
3
2
0
10
2
10123 57
(A)
rr
REVERSE RECOVERY CURRENT I
2
10
SOURCE CURRENT dis/dt (–A/µs)
TRANSIENT THERMAL IMPEDANCE Z
PULSE WIDTH t
w
(s)
Feb.1999
Loading...