Mitsubishi Electric Corporation Semiconductor Group FGR3000FX-90DA Datasheet
MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS
FGR3000FX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
FGR3000FX-90DA
● ITQRM
T(AV) Average on-state current.......................780A
● I
● V
Repetitive controllable on-state current
DRM
Repetitive peak off state voltage
...........3000A
...................4500V
OUTLINE DRAWING Dimensions in mm
GATE (WHITE)
AUXILIARY CATHODE
CONNECTOR (RED)
φ 85 ± 0.2
0.4 MIN0.4 MIN
26 ± 0.5
φ 85 ± 0.2
φ 120 MAX
φ 3.5 DEPTH 2.2 ± 0.2
CATHODE
TYPE NAME
ANODE
φ 3.5 DEPTH 2.2 ± 0.2
● Reverse conducting type
APPLICATION
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.
MAXIMUM RATINGS
Parameter
VDRM
VDSM
VD(DC)
VLTDS
+ : VGK = –2V
Symbol Parameter Conditions Ratings
I
TQRM
IT(RMS)
IT(AV)
ITSM
2
IT
t
IR(RMS)
IR(AV)
IRSM
2
IR
t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Long term DC stability voltage
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
I2t for fusing
RMS Reverse current
Average reverse current
Surge (non-repetitive) reverse current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate reverse current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
—
Weight
—
+
+
+
+
V
DM = 4500V, Tj = 125°C, CS = 6.0µF, LS = 0.2µH
f = 60Hz, sine wave θ = 180°, T
One half cycle at 60Hz
One cycle at 60Hz
f = 60Hz, sine wave θ = 180°C, T
One half cycle at 60Hz
One cycle at 60Hz
V
D = 3000V, IGM = 75A, Tj = 75°C
Recommended value 37
Standard value
Voltage class
90DA
4500
4500
3600
3000
f = 70°C
1.0 × 10
f = 75°C
1.0 × 10
–40 ~ +125
–40 ~ +150
31 ~ 43
3000
1220
780
16
940
600
16
500
10
18
100
900
400
27
100
230
1450
500 ± 8
6
6
UnitSymbol
V
V
V
V
Unit
A
A
A
kA
2
A
A
A
kA
2
A
A/µs
V
V
A
A
W
kW
W
W
°C
°C
kN
g
s
s
Aug.1998
ELECTRICAL CHARACTERISTICS
Symbol
VTM
VRM
IDRM
IRG
dv/dt
tgt
tgq
IGQM
VGT
IGT
Rth(j-f)
On-state voltage
Peak reverse voltage drop
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Turn-off time
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
Parameter Test conditions
PERFORMANCE CURVES
MITSUBISHI REVERSE-CONDUCTING GTO THYRISTORS
T
j = 125°C, ITM = 3000A, Instantaneous measurment
T
j = 125°C, IRM = 3000A, Instantaneous measurment
T
j = 125°C, VDRM Applied, VGK = –2V
T
j = 125°C, VRG = 17V
T
j = 125°C, VD = 3000V, VGK = –2V
T
j = 125°C, ITM = 3000A, IGM = 75A, VD = 3000V
Tj = 125°C, ITM = 3000A, VDM = 4500V, d
VRG = 17V, CS = 6.0µF, LS = 0.2µH
DC METHOD : V
D = 24V, RL = 0.1Ω, Tj = 25°C
GTO Side (Junction to fin)
Diode Side (Junction to fin)
iGQ/dt
= –30A/µs
FGR3000FX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
Limits
Min Typ Max
—
—
—
—
1000
—
—
—
—
—
—
—
—
—
—
—
—
—30µs
720
—
—
—
3000
0.016
0.025
5.0
4.5
250
500
—
10
—
1.5
Unit
V
V
mA
mA
V/µs
µs
A
V
mA
°C/W
MAXIMUM ON-STATE AND MAXIMUM
REVERSE CHARACTERISTICS
4
10
Tj = 125°C
7
5
3
2
3
10
7
5
3
2
2
10
CURRENT (A)
7
5
3
2
1
10
012345678
REVERSE CHARACTERISTIC
(DIODE PART)
ON-STATE CHARACTERISTIC
(GTO PART)
VOLTAGE (V)
GATE CHARACTERISTICS
2
10
7
5
3
VFGM = 10V
2
1
10
7
5
3
2
0
10
7
GATE VOLTAGE (V)
5
3
2
–1
10
2
PFG(AV) = 100W
VGT = 1.5V
Tj = 25°C
IGT = 3000mA
2310
5710323 5710423 5710
PFGM = 400W
IFGM = 100A
RATED ON-STATE AND REVERSE
SURGE CURRENT
20
15
DIODE PART, GTO PART
10
5
SURGE CURRENT (kA)
0
10023 5710123 5710
2
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTICS
(JUNCTION TO FIN)
0.040
0
2310
5710
1
0.035
0.030
DIODE PART
0.025
0.020
GTO PART
0.015
DIODE PART
0.010
0.005
THERMAL IMPEDANCE (°C/W)
5
0
–3
5710–223 5710–123 5710
2310
GTO PART
0
GATE CURRENT (mA)
TIME (S)
Aug.1998
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