Mitsubishi Electric Corporation Semiconductor Group FD2000BV-90DA Datasheet
Aug.1998
AUXILIARY CATHODE
CONNECTOR (RED)
390 ± 8
GATE (WHITE)
φ 3.5 DEPTH 2.2 ± 0.2
CATHODE
0.4 MIN0.4 MIN
TYPE NAME
ANODE
φ 47
φ 47
φ 75 MAX
26 ± 0.5
φ 3.5 DEPTH 2.2 ± 0.2
MITSUBISHI GATE TURN-OFF THYRISTORS
FG1000BV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
FG1000BV-90DA
OUTLINE DRAWING Dimensions in mm
APPLICATION
Inverters, D.C. choppers, Induction heaters, D.C. to D.C. converters.
● ITQRM
Repetitive controllable on-state current
..........1000A
● I
T(AV) Average on-state current.......................400A
● V
DRM
Repetitive peak off state voltage
..................4500V
● Anode short type
A
A
A
kA
A
2
s
A/µs
V
V
A
A
W
kW
W
W
°C
°C
kN
g
V
DM = 3375V, Tj = 125°C, CS = 0.7µF, LS = 0.3µH
f = 60Hz, sine wave θ = 180°, T
f = 70°C
One half cycle at 60Hz
One cycle at 60Hz
V
D = 2250V, IGM = 20A, Tj = 125°C
Recommended value 13
Standard value
Repetitive controllable on-state current
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
Current-squared, time integration
Critical rate of rise of on-state current
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate reverse current
Peak forward gate power dissipation
Peak reverse gate power dissipation
Average forward gate power dissipation
Average reverse gate power dissipation
Junction temperature
Storage temperature
Mounting force required
Weight
I
TQRM
IT(RMS)
IT(AV)
ITSM
I
2
t
diT/dt
VFGM
VRGM
IFGM
IRGM
PFGM
PRGM
PFG(AV)
PRG(AV)
Tj
Tstg
—
—
Symbol Parameter Conditions Ratings
1000
630
400
8.4
2.9 × 10
5
1000
10
17
60
500
240
15
45
100
–40 ~ +125
–40 ~ +150
12 ~ 15
530
Unit
VRRM
VRSM
VR(DC)
VDRM
VDSM
VD(DC)
Unit
Symbol
Parameter
V
V
V
V
V
V
Voltage class
90DA
17
17
17
4500
4500
3600
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
+
Non-repetitive peak off-state voltage
+
DC off-state voltage
+
+ : VGK = –2V
MAXIMUM RATINGS
Aug.1998
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
10
4
7
5
3
2
10
3
7
5
3
2
10
2
7
5
3
2
10
1
Tj = 125°C
10023 5710
1
4
2
23 5710
2
6
8
10
0
10
0
2310
2
5710323 5710423 5710
5
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
VFGM = 10V
VGT = 1.5V
PFG(AV) = 45W
IFGM = 60A
Tj = 25°C
PFGM = 240W
IGT = 2500mA
0.050
0
2310
–3
5710
–2
2310
0
5710
1
23 5710–123 5710
0
0.020
0.030
0.040
0.010
0.045
0.015
0.025
0.035
0.005
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
MAXIMUM ON-STATE CHARACTERISTIC
SURGE ON-STATE CURRENT (kA)
CONDUCTION TIME
(CYCLES AT 60Hz)
RATED SURGE ON-STATE CURRENT
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE CHARACTERISTICS
THERMAL IMPEDANCE (°C/W)
TIME (S)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC
(JUNCTION TO FIN)
4.0
100
100
100
—
10
—
1.5
2500
0.03
V
mA
mA
mA
V/
µ
s
µ
s
A
V
mA
°C/W
On-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
Reverse gate current
Critical rate of rise of off-state voltage
Turn-on time
Peak gate turn-off current
Gate trigger voltage
Gate trigger current
Thermal resistance
T
j = 125°C, ITM = 1000A, Instantaneous measurment
T
j = 125°C, VRRM Applied
T
j = 125°C, VDRM Applied, VGK = –2V
T
j = 125°C, VRG = 17V
T
j = 125°C, VD = 2250V, VGK = –2V
T
j = 125°C, ITM = 1000A, IGM = 20A, VD = 2250V
Junction to fin
MITSUBISHI GATE TURN-OFF THYRISTORS
FG1000BV-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter Test conditions
Limits
Min Typ Max
Unit
VTM
IRRM
IDRM
IRG
dv/dt
tgt
IGQM
VGT
IGT
Rth(j-f)
tgq
Turn-off time
Tj = 125°C, ITM = 1000A, VDM = 3375V, d
iGQ/dt
= –30A/µs
VRG = 17V, CS = 0.7µF, LS = 0.3µH
DC METHOD : V
D = 24V, RL = 0.1Ω, Tj = 25°C
—
—20
µ
s
—
—
—
—
—
—
330
—
—
—
—
—
—
—
1000
—
—
—
—
—
PERFORMANCE CURVES
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