Mitsubishi Electric CR8PM-12, CR8PM Datasheet

MITSUBISHI SEMICONDUCTOR THYRISTOR
CR8PM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
CR8PM
•IT (AV) ...........................................................................8A
•V
DRM ..............................................................400V/600V
•I
•V
iso........................................................................ 1500V
• UL Recognized: File No. E80276
OUTLINE DRAWING
10.5 MAX
5.2
5.0
17
TYPE
NAME
VOLTAGE
CLASS
3.6
13.5 MIN
2.54
2
3
1
231
CATHODE
1
ANODE
2
GATE
3
TO-220F
2.54
1.2
8.5
φ3.2±0.2
1.3 MAX
0.8
Measurement point of case temperature
4.5
Dimensions
in mm
2.8
0.5 2.6
APPLICATION
Switching mode power supply, ECR, regulator for autocycle, motor control
MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
Symbol
V
RRM
VRSM VR (DC) VDRM VD (DC)
Symbol
T (RMS)
I IT (AV) ITSM
2
t
I
PGM PG (AV) VFGM VRGM IFGM Tj Tstg
iso
V
Parameter
Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage
Parameter RMS on-state current Average on-state current Surge on-state current
2
t
for fusing
I
Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature
Weight Isolation voltage
8 400 500 320 400 320
Commercial frequency, sine half wave, 180° conduction, T 60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Typical value T
a=25°C, AC 1 minute, each terminal to case
Voltage class
Conditions
c=81°C
12 600 720 480 600 480
Ratings
12.6
8.0
120
60
5.0
0.5
6.0 10
2.0
–40 ~ +125 –40 ~ +125
2.0
1500
Unit
V V V V V
Unit
A A A
A
W W
V V A
°C °C
g V
2
s
Feb.1999
ELECTRICAL CHARACTERISTICS
Symbol
RRM
I IDRM VTM VGT VGD IGT IH Rth (j-c)
1.The contact thermal resistance Rth (j-c) is 0.5°C/W with greased.
Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance
Parameter
j=125°C, VRRM applied
T T
j=125°C, VDRM applied
T
c=25°C, ITM=25A, instantaneous value
T
a=25°C, VD=6V, IT=1A
Tj=125°C, VD=1/2VDRM T
j=25°C, VD=6V, IT=1A
T
j=25°C, VD=12V
Junction to case
1
MITSUBISHI SEMICONDUCTOR THYRISTOR
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
Test conditions
Min.
— — — —
0.2 — — —
Limits
Typ.
— — — — — —
1.5 —
CR8PM
2.0
2.0
1.4
1.0
3.7
Unit
mA mA
V
V — 15 —
V
mA mA
°C/W
Max.
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
3
10
7
Tc = 125°C
5 3
2
2
10
7 5
3 2
1
10
7 5
ON-STATE CURRENT (A)
3 2
0
10
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
200 180 160 140 120 100
80 60 40 20
SURGE ON-STATE CURRENT (A)
501 423
0
10023 5710
44
1
23 5710
2
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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