Mitsubishi Electric CR6PM-12, CR6PM Datasheet
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR6PM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
CR6PM
•IT (AV) ...........................................................................6A
DRM ..............................................................400V/600V
•V
GT ..........................................................................10mA
•I
•V
iso........................................................................ 1500V
• UL Recognized: File No. E80276
OUTLINE DRAWING
10.5 MAX
5.2
5.0
17
TYPE
NAME
VOLTAGE
CLASS
3.6
13.5 MIN
2.54
2
3
1
231
CATHODE
1
ANODE
2
GATE
3
TO-220F
2.54
1.2
8.5
φ3.2±0.2
1.3 MAX
0.8
∗ Measurement point of
case temperature
4.5
Dimensions
in mm
2.8
0.5 2.6
APPLICATION
Switching mode power supply, ECR, regulator for autocycle, motor control
MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
Symbol
RRM
V
VRSM
VR (DC)
VDRM
VD (DC)
Symbol
I
T (RMS)
IT (AV)
ITSM
2
t
I
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
V
iso
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
Parameter
RMS on-state current
Average on-state current
Surge on-state current
2
I
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
—
Isolation voltage
8
400
500
320
400
320
Commercial frequency, sine half wave, 180° conduction, T
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
T
a=25°C, AC 1 minute, each terminal to case
Voltage class
Conditions
c=85°C
12
600
720
480
600
480
Ratings
9.4
6
90
34
5
0.5
6
10
2
–40 ~ +125
–40 ~ +125
2.0
1500
Unit
V
V
V
V
V
Unit
A
A
A
A
W
W
V
V
A
°C
°C
g
V
2
s
Feb.1999
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM
VGT
VGD
IGT
IH
Rth (j-c)
✽1.The contact thermal resistance Rth (j-c) is 0.5°C/W with greased.
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Parameter
j=125°C, VRRM applied
T
T
j=125°C, VDRM applied
T
c=25°C, ITM=20A, Instantaneous value
T
j=25°C, VD=6V, IT=1A
T
j=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, IT=1A
T
j=25°C, VD=12V
Junction to case
✽1
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
Test conditions
Min.
—
—
—
—
0.2
—
—
—
Limits
Typ.
—
—
—
—
—
—
15
—
CR6PM
2.0
2.0
1.7
1.0
4.0
Unit
mA
mA
V
V
—
10
—
V
mA
mA
°C/W
Max.
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
3
10
7
Tc = 125°C
5
3
2
2
10
7
5
3
2
1
10
7
5
ON-STATE CURRENT (A)
3
2
0
10
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
SURGE ON-STATE CURRENT (A)
501 423
0
10023 5710
44
1
23 5710
2
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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