Mitsubishi Electric Corporation Semiconductor Group CR5AS Datasheet
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR5AS
T (AV) ...........................................................................5A
•I
•V
DRM ..............................................................400V/600V
GT .........................................................................200µA
•I
OUTLINE DRAWING
6.5
5.0±0.2
4
∗
TYPE
NAME
VOLTAGE
CLASS
.0 MAX
1
2.3 2.3
1
1.0
23
24
3
1
MP-3
0.9 MAX
2.3
Dimensions
0.5±0.1
1.5±0.2
5.5±0.2
10 MAX
2.3 MIN
0.5±0.2
0.8
Measurement point of
∗
case temperature
CATHODE
1
ANODE
2
GATE
3
ANODE
4
in mm
APPLICATION
Switching mode power supply, regulator for autocycle, such as TV. VCR. PRINTER, ignitors for
autocycle, electric tools, other general purpose control applications, strobe flasher
MAXIMUM RATINGS
Conditions
Voltage class
c=88°C
12
600
720
480
600
480
Ratings
7.8
5
90
33
0.5
0.1
6
6
0.3
–40 ~ +125
–40 ~ +125
0.26
Symbol
RRM
V
VRSM
VR (DC)
VDRM
VD (DC)
Symbol
I
T (RMS)
IT (AV)
ITSM
2
t
I
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
✽1. With Gate-to-cathode resistance RGK=220Ω
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
RMS on-state current
Average on-state current
Surge on-state current
2
I
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
—
Parameter
Parameter
8
400
500
✽1
✽1
Commercial frequency, sine half wave, 180° conduction, T
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
320
400
320
Unit
V
V
V
V
V
Unit
A
A
A
2
A
s
W
W
V
V
A
°C
°C
g
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM
VGT
VGD
IGT
IH
Rth (j-c)
✽2.The method point for case temperature is at anode tab.
✽3.If special values of I
The above values do not include the current flowing through the 220Ω resistance between the gate and cathode.
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Item
I
GT (µA)
Parameter
j=125°C, VRRM applied, RGK=220Ω
T
T
j=125°C, VDRM applied, RGK=220Ω
T
c=25°C, ITM=15A, instantaneous value
T
j=25°C, VD=6V, IT=0.1A
T
j=125°C, VD=1/2VDRM, RGK=220Ω
T
j=25°C, VD=6V, IT=0.1A
T
j=25°C, VD=12V, RGK=220Ω
Junction to case
GT are required, choose at least two items from those listed in the table below. (Example: AB, BD)
A
1 ~ 30
B
20 ~ 50
C
40 ~ 100
Test conditions
✽2
D
80 ~ 200
CR5AS
MEDIUM POWER USE
Limits
Max.
Typ.
Min.
2.0
—
—
2.0
—
—
1.8
—
—
0.8
—
—
—
—
0.1
—
1
3.5
—
—
—
200
3.0
✽3
—
Unit
mA
mA
V
V
V
µA
mA
°C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
2
10
7
Tc = 25°C
5
3
2
1
10
7
5
3
2
0
10
7
5
ON-STATE CURRENT (A)
3
2
–1
10
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
100
90
80
70
60
50
40
30
20
10
SURGE ON-STATE CURRENT (A)
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
0
10023 5710
44
1
23 5710
2
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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