Mitsubishi Electric Corporation Semiconductor Group CR3PM Datasheet
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
CR3PM
•IT (AV) ...........................................................................3A
DRM ..............................................................400V/600V
•V
GT .........................................................................100µA
•I
•V
iso........................................................................ 1500V
• UL Recognized: File No. E80276
OUTLINE DRAWING
10.5 MAX
5.2
5.0
17
TYPE
NAME
VOLTAGE
CLASS
3.6
13.5 MIN
2.54
2
3
1
231
CATHODE
1
ANODE
2
GATE
3
TO-220F
2.54
1.2
8.5
φ3.2±0.2
1.3 MAX
0.8
∗ Measurement point of
case temperature
4.5
Dimensions
in mm
2.8
0.5 2.6
APPLICATION
TV sets, control of household equipment such as electric blankets, other general purpose control
applications
MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
Conditions
Voltage class
c=103°C
12
600
720
480
600
480
Ratings
4.7
3.0
70
24.5
0.5
0.1
6
6
0.3
–40 ~ +125
–40 ~ +125
2.0
1500
Symbol
RRM
V
VRSM
VR (DC)
VDRM
VD (DC)
Symbol
I
T (RMS)
IT (AV)
ITSM
2
t
I
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
V
iso
✽1. With gate to cathode resistance RGK=220Ω.
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
RMS on-state current
Average on-state current
Surge on-state current
2
I
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
—
Isolation voltage
Parameter
Parameter
8
400
500
✽1
✽1
Commercial frequency, sine half wave, 180° conduction, T
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
T
a=25°C, AC 1 minute, each terminal to case
320
400
320
Unit
V
V
V
V
V
Unit
A
A
A
2
A
s
W
W
V
V
A
°C
°C
g
V
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
RRM
I
IDRM
VTM
VGT
VGD
IGT
Rth (j-c)
✽2.The contact thermal resistance Rth (c-f) is 0.5°C/W with greased.
✽3.If special values of I
The above values do not include the current flowing through the 220Ω resistance between the gate and cathode.
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Item
I
GT (µA)
Parameter
j=125°C, VRRM applied, RGK=220Ω
T
T
j=125°C, VDRM applied, RGK=220Ω
T
c=25°C, ITM=10A, instantaneous value
T
j=25°C, VD=6V, IT=0.1A
T
j=125°C, VD=1/2VDRM, RGK=220Ω
T
j=25°C, VD=6V, IT=0.1A
Junction to case
GT are required, choose at least two items from those listed in the table below. (Example: AB, BC)
A
1 ~ 30
B
20 ~ 50
C
40 ~ 100
Test conditions
✽2
LOW POWER USE
Limits
Min.
Typ.
—
—
—
—
—
—
—
—
0.1
—
1
—
—
—
CR3PM
2.0
2.0
1.6
0.8
4.1
Unit
mA
mA
V
V
—
V
✽3
µA
°C/W
Max.
100
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
2
10
7
Tc = 25°C
5
3
2
1
10
7
5
3
2
0
10
7
5
ON-STATE CURRENT (A)
3
2
–1
10
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
100
90
80
70
60
50
40
30
20
10
SURGE ON-STATE CURRENT (A)
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
0
10023 5710
44
1
23 5710
2
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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