Mitsubishi Electric Corporation Semiconductor Group CR3JM Datasheet
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉
CR3JM
LOW POWER, STROBE USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR3JM
•IT (AV) ........................................................................ 0.8A
•V
DRM .......................................................................400V
GT ..........................................................................50mA
•I
OUTLINE DRAWING
10.5 MAX
3.2±0.2
2.5
CATHODE
1
ANODE
2
GATE
3
ANODE
4
∗
231
TO-220
TYPE
NAME
VOLTAGE
CLASS
24
3
16 MAX
3.8 MAX
12.5 MIN
1
4
7.0
φ3.6±0.2
1.0
0.8
2.5
0.5
4.5
Measurement point of
∗
case temperature
Dimensions
in mm
4.5
1.3
2.6
APPLICATION
Automatic strobe flasher
MAXIMUM RATINGS
Symbol
RRM
V
VRSM
VDRM
VDSM
Symbol
I
T (AV)
ITRM
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
✽1. Refer to sections 1, 2 on STROBE FLASHER APPLICATION.
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Average on-state current
Repetitive peak on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
—
Parameter
Parameter
Commercial frequency, sine half wave, 180° conduction, T
✽1
C
M=1800µF with discharge current
Typical value
Conditions
Voltage class
8
400
480
400
480
a=37°C
Ratings
0.8
240
3.0
0.3
6
6
1
–40 ~ +125
–40 ~ +125
2.0
Unit
V
V
V
V
Unit
A
A
W
W
V
V
A
°C
°C
g
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉
ELECTRICAL CHARACTERISTICS
Symbol
RRM
I
IDRM
VTM
VGT
VGD
IGT
Cc
✽2.Refer to sections 3 on STROBE FLASHER APPLICATION.
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Commutating capacitor
Parameter
j=25°C, VRRM applied
T
T
j=25°C, VDRM applied
T
c=25°C, ITM=3A, Instantaneous value
T
j=25°C, VD=6V, RL=6Ω
T
j=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, RL=6Ω
M=1800µF, VCM=350V, ITM=240A, L=50µH, VGK=–6V,
✽2
C
T
a=25°C
CR3JM
LOW POWER, STROBE USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
Test conditions
Min.
—
—
—
—
0.1
—
—
Limits
Typ.
—
—
—
—
—
—
—
Max.
0.1
0.1
1.8
2.0
—
50
2.8
Unit
mA
mA
V
V
V
mA
µF
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
3
10
7
Tc = 25°C
5
3
2
2
10
7
5
3
2
1
10
7
5
ON-STATE CURRENT (A)
3
2
0
10
ON-STATE VOLTAGE (V)
GATE CHARACTERISTICS
1
10
7
5
V
FGM
3
2
0
10
7
5
3
2
–1
10
7
GATE VOLTAGE (V)
5
3
2
–2
10
1002 846 91735
0
= 6V
VGT = 2.0V
IGT = 50mA
j
= 25°C)
(T
PGM = 3W
P
G(AV)
= 0.3W
I
FGM
VGD = 0.1V
2310
5710123 5710223 5710
= 1A
3
GATE CURRENT (mA)
Feb.1999
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