Mitsubishi Electric Corporation Semiconductor Group CR3EM Datasheet
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR3EM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR3EM
•IT (AV) ........................................................................0.6A
•V
DRM .......................................................................400V
GT ..........................................................................30mA
•I
OUTLINE DRAWING
TYPE NAME
VOLTAGE
CLASS
8 MAX
1.2±0.1
0.8
0.8
2.5 2.5
231
4.5 MAX
10 MAX
1.55±0.1
TO-202
1.0±0.5
1.5 MIN
3
4 MAX
12 MIN
2
1
Dimensions
CATHODE
1
ANODE
2
GATE
3
in mm
0.5
APPLICATION
Automatic strobe flasher
MAXIMUM RATINGS
Symbol
RRM
V
VRSM
VR (DC)
VDRM
VDSM
Symbol
I
T (RMS)
IT (AV)
ITSM
2
t
I
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
RMS on-state current
Average on-state current
Surge on-state current
2
I
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
—
Parameter
Parameter
Voltage class
8
400
500
320
400
600
Conditions
Commercial frequency, sine half wave, 180° conduction, T
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
a=43°C
Ratings
0.94
0.6
70
20
2.0
0.2
6
6
1
–40 ~ +125
–40 ~ +125
1.1
Unit
V
V
V
V
V
Unit
A
A
A
A
W
W
V
V
A
°C
°C
g
2
s
Feb.1999
ELECTRICAL CHARACTERISTICS
Symbol
RRM
I
IDRM
VTM
VGT
VGD
IGT
IH
Rth (j-a)
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Parameter
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
Test conditions
j=125°C, VRRM applied
T
T
j=125°C, VDRM applied
T
c=25°C, ITM=10A, instantaneous value
T
j=25°C, VD=6V, IT=0.5A
Tj=125°C, VD=1/2VDRM
T
j=25°C, VD=6V, IT=0.5A
T
j=25°C, VD=12V
Junction to ambient
LOW POWER USE
Limits
Min.
Typ.
—
—
—
—
—
—
—
—
0.2
—
—
—
25
45
—
—
CR3EM
0.1
0.1
1.6
1.5
Unit
mA
mA
V
V
—
30
—
V
mA
mA
°C/W
Max.
120
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
2
10
7
Tc = 25°C
5
3
2
1
10
7
5
3
2
0
10
7
5
ON-STATE CURRENT (A)
3
2
–1
10
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
100
90
80
70
60
50
40
30
20
10
SURGE ON-STATE CURRENT (A)
3.80.6 1.4 2.2 3.01.0 1.8 2.6 3.4
0
10023 5710
44
1
23 5710
2
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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