Mitsubishi Electric Corporation Semiconductor Group CR2AM-8A Datasheet
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR02AM-8A
LOW POWER USE
GLASS PASSIVATION TYPE
CR02AM-8A
APPLICATION
Strobe flasher
✽1. With gate to cathode resistance RGK=1kΩ.
Symbol
I
T (RMS)
IT (AV)
ITSM
I
2
t
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180° conduction, T
a=30°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A
2
s
W
W
V
V
A
°C
°C
g
Ratings
0.47
0.3
10
0.4
0.1
0.01
6
6
0.1
–40 ~ +125
–40 ~ +125
0.23
•IT (AV) ........................................................................ 0.3A
•V
DRM .......................................................................400V
•I
GT .........................................................................100µA
Symbol
V
RRM
VRSM
VR (DC)
VDRM
VD (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
✽1
DC off-state voltage
✽1
Voltage class
8
400
500
320
400
320
Unit
V
V
V
V
V
MAXIMUM RATINGS
TYPE
NAME
VOLTAGE
CLASS
2
1
3
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
φ5.0 MAX
4.4
5.0 MAX
12.5 MIN
3.9 MAX
1.3
1.25 1.25
CIRCUMSCRIBE
CIRCLE
φ0.7
1
3
2
OUTLINE DRAWING
Dimensions
in mm
JEDEC : TO-92
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR02AM-8A
LOW POWER USE
GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM
VGT
VGD
IGT
IH
Rth (j-a)
Test conditions
T
j=125°C, VRRM applied
T
j=125°C, VDRM applied, RGK=1kΩ
T
c=25°C, ITM=0.6A, instantaneous value
T
j=25°C, VD=6V, IT=0.1A
✽3
Tj=125°C, VD=1/2VDRM, RGK=1kΩ
T
j=25°C, VD=6V, IT=0.1A
✽3
Tj=25°C, VD=12V, RGK=1Ω
Junction to ambient
Unit
mA
mA
V
V
V
µA
mA
°C/W
Typ.
—
—
—
—
—
—
—
—
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Limits
Min.
—
—
—
—
0.2
1
—
—
Max.
0.1
0.1
1.6
0.8
—
100
✽2
3
180
✽2.If special values of I
GT are required, choose at least two items from those listed in the table below. (Example: AB, BC)
B
20 ~ 50
C
40 ~ 100
Item
I
GT (µA)
A
1 ~ 30
The above values do not include the current flowing through the 1kΩ resistance between the gate and cathode.
3V
DC
I
GSIGT
6V
DC
60Ω
V
GT
21
TUT
1kΩ
R
GK
A3 A2
V1
A1
SWITCH 1 : IGT measurement
SWITCH 2 : V
GT
measurement
(Inner resistance of voltage meter is about 1kΩ)
✽3. I
GT
, VGT measurement circuit.
SWITCH
10023 5710
1
4
2
23 5710
2
44
6
8
10
3
1
5
7
9
0
2.61.0 1.4 1.8 2.21.2 1.6 2.0 2.4
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
7
5
3
2
10
–2
Ta = 25°C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
PERFORMANCE CURVES
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