MITSUBISHI CM900HC-90H User Manual
MITSUBISHI HVIGBT MODULES
CM900HC-90H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
CM900HC-90H
● IC ..................................................................900 A
● V
CES ...................................................... 4500 V
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
190
±0.5
171
3 - M4 NUTS
screwing depth
min. 7.7
CM
57±0.1
C
79.4
±0.3
C
E
G
E
61.5
±0.1
57
±0.1
20.25
41.25
±0.3 ±0.3
57
CC
EE
±0.2
±0.3
61.5
±0.2
13
±0.1
6 - M8 NUTS
+0.1
–0.2
20
±0.1
±0.5
±0.2
40
124
140
±0.1
8 - φ7 MOUNTING HOLES
screwing depth
min. 16.5
±0.2
5.2
+1
0
±0.15
5
+1
0
38
28
C
C
C
C
G
E
E
CIRCUIT DIAGRAM
±0.3
40
LABEL
E
±0.2
15
E
±0.5
29.5
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Sep. 2009
1
MITSUBISHI HVIGBT MODULES
CM900HC-90H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol Item Conditions Ratings Unit
V
CES
V
GES
I
C
I
CM
I
E
IEM
P
c
V
iso
T
j
T
op
T
stg
t
psc
ELECTRICAL CHARACTERISTICS
Symbol Item Conditions
I
CES
V
GE(th)
I
GES
C
ies
C
oes
C
res
Q
g
V
CE(sat)
t
d(on)
t
r
E
on(10%)
t
d(off)
t
f
E
off(10%)
V
EC
t
rr
Q
rr
E
rec(10%)
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed T
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current (Note 2)
Maximum power dissipation (Note 3)
Isolation voltage
VGE = 0V, Tj = 25°C
V
CE
= 0V, Tj = 25°C
DC, T
c
= 100°C
Pulse (Note 1)
DC
Pulse (Note 1)
T
c
= 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
Junction temperature
Operating temperature
Storage temperature
Maximum short circuit pulse width
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
V
CC
= 3200V, VCE ≤ V
V
CE
= V
CES
, VGE = 0V
CE
= 10 V, IC = 90 mA, Tj = 25°C
V
V
GE
= V
GES
, VCE = 0V, Tj = 25°C
CES
, VGE = 15V, Tj = 125°C
T
j
= 25°C
T
j
= 125°C
Input capacitance
Output capacitance
V
CE
= 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation
voltage
Tu r n-on delay time
Tu r n-on rise time
Tu r n-on switching energy
(Note 5)
Tu r n-off delay time
Tu r n-off fall time
Tu r n-off switching energy
(Note 5)
Emitter-collector voltage
(Note 2)
V
CC
= 2250 V, IC = 900 A, VGE = ±15 V, Tj = 25°C
I
C
= 900 A (Note 4)
V
GE
= 15 V
V
CC
= 2250 V, IC = 900 A, VGE = ±15 V
R
G
= 10 Ω, Tj = 125°C, Ls = 100 nH
Inductive load
CC
= 2250 V, IC = 900 A, VGE = ±15 V
V
R
G
= 10 Ω, Tj = 125°C, Ls = 100 nH
Inductive load
E
= 900 A (Note 4)
I
V
GE
= 0 V
Tj = 25°C
T
j
= 125°C
Tj = 25°C
T
j
= 125°C
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
CC
= 2250 V, IE = 900 A, VGE = ±15 V
V
R
G
= 10 Ω, Tj = 125°C, Ls = 100 nH
Inductive load
(Note 2, 5)
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. E
on(10%)
/ E
off(10%)
/ E
rec(10%)
are the integral of
jmax
rating (150°C).
0.1VCE x 0.1IC x dt.
opmax
—
—
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
rating (125°C).
INSULATED TYPE
4500
± 20
900
1800
900
1800
11900
6000
–40 ~ +150
–40 ~ +125
–40 ~ +125
10
Limits
Ty p
—
12
6.0
—
162
12.0
3.6
15
3.45
3.70
—
—
4.20
—
—
2.50
4.80
4.15
—
920
1.00
MaxMin
5
50
7.0
0.5
—
—
—
—
—
—
2.40
1.20
—
6.00
1.20
—
—
—
1.80
—
—
V
V
A
A
A
A
W
V
°C
°C
°C
µs
Unit
mA
V
µA
nF
nF
nF
µC
V
µs
µs
J/P
µs
µs
J/P
V
µs
µC
J/P
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Sep. 2009
2
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
THERMAL CHARACTERISTICS
Symbol Item Conditions
th(j-c)Q
R
R
th(j-c)R
R
th(c-f)
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
M
t
M
s
M
t
m
CTI
d
a
d
s
L
P CE
R
CC’+EE’
Thermal resistance
Thermal resistance
Contact thermal resistance
Mounting torque
Mass
Comparative tracking index
Clearance
Creepage distance
Parasitic stray inductance
Internal lead resistance
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λ
grease
= 1W/m·K, D
M8: Main terminals screw
M6: Mounting screw
M4: Auxiliary terminals screw
T
c
= 25°C
(c-f)
= 100 µm
MITSUBISHI HVIGBT MODULES
CM900HC-90H
HIGH POWER SWITCHING USE
INSULATED TYPE
—
—
—
7.0
3.0
1.0
—
600
19.5
32.0
—
—
Limits
Ty p
—
—
6.0
Limits
Ty p
—
—
—
1.5
—
—
—
10
0.16
MaxMin
10.5
21.0
MaxMin
13.0
—
6.0
2.0
—
—
—
—
—
—
Unit
K/kW
K/kW
K/kW
Unit
N·m
N·m
N·m
kg
—
mm
mm
nH
mΩ
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Sep. 2009
3
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