MITSUBISHI CM900HC-90H User Manual

MITSUBISHI HVIGBT MODULES

CM900HC-90H

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE

CM900HC-90H

● IC ..................................................................900 A

● V

CES ...................................................... 4500 V

● Insulated Type

● 1-element in a Pack

● AISiC Baseplate

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

INSULATED TYPE

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

190

±0.5

171

3 - M4 NUTS

screwing depth min. 7.7

CM

57±0.1

C

79.4

±0.3

C

E

G

E

61.5

±0.1

57

±0.1

20.25

41.25

±0.3 ±0.3

57

CC

EE

±0.2

±0.3

61.5

±0.2

13

±0.1

6 - M8 NUTS

+0.1

–0.2

20

±0.1

±0.5

±0.2

40

124

140

±0.1

8 - φ7 MOUNTING HOLES

screwing depth min. 16.5

±0.2

5.2

+1

0

±0.15

5

+1

0

38

28

C

G E

E

CIRCUIT DIAGRAM

±0.3

40

LABEL

E

±0.2

15

E

±0.5

29.5

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Sep. 2009

1

MITSUBISHI HVIGBT MODULES

CM900HC-90H

HIGH POWER SWITCHING USE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS

Symbol Item Conditions Ratings Unit

V

CES

V

GES

I

C

I

CM

I

E

IEM P

c

V

iso

T

j

T

op

T

stg

t

psc

ELECTRICAL CHARACTERISTICS

Symbol Item Conditions

I

CES

V

GE(th)

I

GES

C

ies

C

oes

C

res

Q

g

V

CE(sat)

t

d(on)

t

r

E

on(10%)

t

d(off)

t

f

E

off(10%)

V

EC

t

rr

Q

rr

E

rec(10%)

Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed T

Collector-emitter voltage Gate-emitter voltage

Collector current

Emitter current (Note 2)

Maximum power dissipation (Note 3) Isolation voltage

VGE = 0V, Tj = 25°C V

CE

= 0V, Tj = 25°C

DC, T

c

= 100°C

Pulse (Note 1) DC Pulse (Note 1) T

c

= 25°C, IGBT part

RMS, sinusoidal, f = 60Hz, t = 1 min. Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width

Collector cutoff current

Gate-emitter threshold voltage Gate leakage current

V

CC

= 3200V, VCE ≤ V

V

CE

= V

CES

, VGE = 0V

CE

= 10 V, IC = 90 mA, Tj = 25°C

V

GE

= V

GES

, VCE = 0V, Tj = 25°C

CES

, VGE = 15V, Tj = 125°C

T

j

= 25°C

T

j

= 125°C

Input capacitance Output capacitance

V

CE

= 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Tu r n-on delay time Tu r n-on rise time Tu r n-on switching energy

(Note 5) Tu r n-off delay time Tu r n-off fall time Tu r n-off switching energy

(Note 5) Emitter-collector voltage

(Note 2)

V

CC

= 2250 V, IC = 900 A, VGE = ±15 V, Tj = 25°C

I

C

= 900 A (Note 4)

V

GE

= 15 V

V

CC

= 2250 V, IC = 900 A, VGE = ±15 V

R

G

= 10 Ω, Tj = 125°C, Ls = 100 nH

Inductive load

CC

= 2250 V, IC = 900 A, VGE = ±15 V

V R

G

= 10 Ω, Tj = 125°C, Ls = 100 nH

Inductive load

E

= 900 A (Note 4)

I V

GE

= 0 V

Tj = 25°C T

j

= 125°C

Tj = 25°C T

j

= 125°C

Reverse recovery time

(Note 2) Reverse recovery charge

(Note 2) Reverse recovery energy

CC

= 2250 V, IE = 900 A, VGE = ±15 V

V R

G

= 10 Ω, Tj = 125°C, Ls = 100 nH

Inductive load

(Note 2, 5)

2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

3. Junction temperature (Tj) should not exceed T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

5. E

on(10%)

/ E

off(10%)

/ E

rec(10%)

are the integral of

jmax

rating (150°C).

0.1VCE x 0.1IC x dt.

opmax

— —

5.0 — — — — — — — — —

—

— —

—

— —

—

rating (125°C).

INSULATED TYPE

4500

± 20

900

1800

900

1800

11900

6000 –40 ~ +150 –40 ~ +125 –40 ~ +125

10

Limits

Ty p

— 12

6.0 —

162

12.0

3.6 15

3.45

3.70 — —

4.20

— —

2.50

4.80

4.15

—

920

1.00

MaxMin

5

50

7.0

0.5 — — — — — —

2.40

1.20

—

6.00

1.20

—

— —

1.80

—

V V A A A A

W

V

°C °C °C µs

Unit

mA

V

µA nF nF nF µC

V

µs µs

J/P

µs µs

J/P

V

µs

µC

J/P

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Sep. 2009

2

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

THERMAL CHARACTERISTICS

Symbol Item Conditions

th(j-c)Q

R R

th(j-c)R

R

th(c-f)

MECHANICAL CHARACTERISTICS

Symbol Item Conditions

M

t

M

s

M

t

m CTI d

a

d

s

L

P CE

R

CC’+EE’

Thermal resistance Thermal resistance Contact thermal resistance

Mounting torque

Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance

Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λ

grease

= 1W/m·K, D

M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw

T

c

= 25°C

(c-f)

= 100 µm

MITSUBISHI HVIGBT MODULES

CM900HC-90H

HIGH POWER SWITCHING USE

INSULATED TYPE

— — —

7.0

3.0

1.0 —

600

19.5

32.0 — —

Limits

Ty p

— —

6.0

Limits

Ty p

— — —

1.5 — — — 10

0.16

MaxMin

10.5

21.0

MaxMin

13.0

—

6.0

2.0 — — — — — —

Unit

K/kW K/kW K/kW

Unit

N·m N·m N·m

kg

— mm mm

nH mΩ

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Sep. 2009

3

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

PERFORMANCE CURVES

MITSUBISHI HVIGBT MODULES

CM900HC-90H

HIGH POWER SWITCHING USE

INSULATED TYPE

OUTPUT CHARACTERISTICS

Tj = 125°C

1500

)

A

(

1000

500

COLLECTOR CURRENT

0

01 3245

COLLECTOR-EMITTER VOLTAGE (V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

V

GE

(

= 20V

= 15V

= 12V

(

TYPICAL

)

V

GE

V

)

= 10V

GE

= 8V

)

TRANSFER CHARACTERISTICS

V

CE

= 20V

1500

)

A

(

1000

500

COLLECTOR CURRENT

Tj = 25°C T

j

6

0

02 64810

= 125°C

GATE-EMITTER VOLTAGE (V

FORWARD CHARACTERISTICS

(

TYPICAL

FREE-WHEEL DIODE

(

TYPICAL

)

12

)

V

GE

= 15V

1500

)

A

(

1000

500

COLLECTOR CURRENT

Tj = 25°C

j

= 125°C

0

01 32456

COLLECTOR-EMITTER SATURATION VOLTAGE (V

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

T

1500

)

A

(

1000

EMITTER CURRENT

500

Tj = 25°C T

j

0

024681357

)

EMITTER-COLLECTOR VOLTAGE (V

= 125°C

)

Sep. 2009

4

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM900HC-90H

HIGH POWER SWITCHING USE

INSULATED TYPE

CAPACITANCE CHARACTERISTICS

3

10

7 5

3 2

2

10

7

)

5

nF

(

3 2

1

10

7 5

3

CAPACITANCE

2

0

10

7 5

3

V

GE

2

f = 100kHz

-1

10

-1

23 57

10

COLLECTOR-EMITTER VOLTAGE (V

HALF-BRIDGE SWITCHING ENERGY

10

V

CC

RG = 10Ω, Tj = 125°C Inductive load

8

)

J/P

(

6

(

TYPICAL

= 0V, Tj = 25°C

0

10

CHARACTERISTICS

(

TYPICAL

= 2250V, V

GE

)

C

ies

C

oes

C

res

23 57 23 57

10

1

)

= ±15V

E

on

10

GATE CHARGE CHARACTERISTICS

(

TYPICAL

)

20

V

CE

= 2250V, IC = 900A

Tj = 25°C

15

)

V

(

10

5

0

-5

GATE-EMITTER VOLTAGE

-10

2

-15

GATE CHARGE (µC

20051015

)

HALF-BRIDGE SWITCHING ENERGY

CHARACTERISTICS

(

TYPICAL

)

15

V

CC

= 2250V, IC = 900A

V

GE

= ±15V, Tj = 125°C

Inductive load

)

J/P

(

10

E

on

E

off

4

SWITCHING ENERGIES

2

E

rec

0

0 500 1000 1500 2000

COLLECTOR CURRENT (A

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

)

SWITCHING ENERGIES

5

E

off

E

rec

0

0102030

GATE RESISTANCE (Ω

)

40

Sep. 2009

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM900HC-90H

HIGH POWER SWITCHING USE

INSULATED TYPE

HALF-BRIDGE SWITCHING TIME

2

10

V

CC

= 2250V, V

7

R

G

= 10Ω, Tj = 125°C

5

Inductive load

3

2

)

µs

1

10

(

7 5

3

2

0

10

SWITCHING TIMES

7 5

3

2

-1

10

2

10

COLLECTOR CURRENT (A

CHARACTERISTICS

(

TYPICAL

GE

)

= ±15V

t

r

3

10

d(off)

d(on)

f

FREE-WHEEL DIODE REVERSE RECOVERY

CHARACTERISTICS

(

2

10

V

CC

= 2250V, V

7

R

G

= 10Ω, Tj = 125°C

5

Inductive load

3

)

2

µs

(

1

10

7 5

3

2

0

10

7 5

REVERSE RECOVERY TIME

3

2

-1

10

4

423 57423 57

10

2

)

TYPICAL

GE

EMITTER CURRENT (A

= ±15V

3

10

)

4

10

7 5

)

A

3

(

2

l

rr

t

rr

423 57423 57

10

3

10

7 5

3

2

10

7 5

REVERSE RECOVERY CURRENT

3

2

1

10

4

)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTICS

1.2 R

th(j–c)Q

= 10.5K/kW

th(j–c)R

= 21K/kW

R

1.0

0.8

0.6

0.4

0.2

NORMALIZED TRANSIENT THERMAL IMPEDANCE

0

10

-3

23 57

10

-2

23 57

TIME (s

10

-1

23 57

)

10

0

23 57

10

1

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Sep. 2009

6

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

REVERSE BIAS SAFE OPERATING AREA

2500

V

CC

≤ 3200V, V

Tj = 125°C, RG ≥ 10Ω

2000

)

A

(

1500

1000

COLLECTOR CURRENT

500

(

RBSOA

GE

= ±15V

)

12000

10000

)

A

(

8000

6000

4000

COLLECTOR CURRENT

2000

CC

V Tj = 125°C, RG ≥ 10Ω

MITSUBISHI HVIGBT MODULES

CM900HC-90H

HIGH POWER SWITCHING USE

INSULATED TYPE

SHORT CIRCUIT

SAFE OPERATING AREA

(SCSOA)

≤ 3200V, V

GE

= ±15V

00

2500

)

A

(

2000

1500

1000

500

REVERSE RECOVERY CURRENT

1000 20000 3000 50004000

COLLECTOR-EMITTER VOLTAGE (V

FREE-WHEEL DIODE REVERSE RECOVERY

SAFE OPERATING AREA

(

RRSOA

V

CC

≤ 3200V, di/dt ≤ 3300A/µs

Tj = 125°C

)

1000 20000 3000 50004000

COLLECTOR-EMITTER VOLTAGE (V

)

0

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

1000 20000 3000 50004000

COLLECTOR-EMITTER VOLTAGE (V

)

Sep. 2009

7

MITSUBISHI CM900HC-90H User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual