MITSUBISHI CM900DU-24NF User Guide

CM900DU-24NF

MITSUBISHI IGBT MODULES

CM900DU-24NF

HIGH POWER SWITCHING USE

●

IC ...................................................................900A

●

VCES ......................................................... 1200V

●

Insulated Type

●

2-elements in a pack

APPLICATION

UPS & General purpose inverters, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM

A,B HOUSING Type

(J. S. T. Mfg. Co. Ltd)

A : VHR-2N
B : VHR-5N

Tc measured point
(The side of Cu
base plate)

8-f6.5

MOUNTING HOLES

9-M6 NUTS 12

15.7

A

E2G2C2

B

PPS

18

150

137.5

±0.25

42

1414

C2E1

E2

42 42

Dimensions in mm

Tc measured point
(The side of Cu

12

2

base plate)

C1E1G1

11 1921

±0.25

38

±0.25

±0.25

74

166

129.5

34.6

+1.0
–0.5

4

42.5

10.5

C1

14 1414141414

15.7

±0.25

38

5.5

±0.25

74

1.9

±0.2

34.6

+1.0
–0.5

LABEL

25.1

C2

C2E1 E2 C1

C1

G1 E1 G2E2

CIRCUIT DIAGRAM

Mar. 2003

MITSUBISHI IGBT MODULES

CM900DU-24NF

HIGH POWER SWITCHING USE

MAXIMUM RATINGS

Symbol Parameter

CES

V
VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

—

Torque strength
Weight

—

ELECTRICAL CHARACTERISTICS

(Tj = 25°C)

Conditions UnitRatings
G-E Short
C-E Short

C = 25°C

T
Pulse (Note 2)

C = 25°C

T
Pulse (Note 2)

C = 25°C

T

Main terminal to base plate, AC 1 min.
Main Terminal M6
Mounting holes M6
Typical value

(Tj = 25°C)

Symbol Parameter Test conditions

ICES
VGE(th)
IGES
VCE(sat)
R(lead)

Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q

th(j-c)R

R
R

th(c-f)

Rth(j-c’)Q
R

th(j-c’)R
G

R

Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).

1 : Tc measured point is indicated in OUTLINE DRAWING.

*

2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*

3 : If you use this value, Rth(f-a) should be measured just under the chips.

*

Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Module lead resistance

Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time

Note 1

)

Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage
Thermal resistance

*1

Contact thermal resistance
Thermal resistance
External gate resistance

2. Pulse width and repetition rate should be such that the device junction temp. (T

3. Junction temperature (T

j) should not increase beyond 150°C.

VCE = VCES, VGE = 0V
I

C = 90mA, VCE = 10V

V

GE = VCES, VCE = 0V
j = 25°C

T
T

j = 125°C

IC = 900A, VGE = 15V

Ic = 900A, terminal-chip

CE = 10V

V
V

GE = 0V
CC = 600V, IC = 900A, VGE = 15V

V

CC = 600V, IC = 900A

V
V

GE1 = VGE2 = 15V
G = 0.35Ω, Inductive load switching operation

R
I

E = 900A

E = 900A, VGE = 0V

I
IGBT part (1/2 module)
FWDi part (1/2 module)

*2

Case to fin, Thermal compound applied

(1/2 module)
Tc measured point is just under the chips (IGBT part)
Tc measured point is just under the chips (FWDi part)

j) does not exceed Tjmax rating.

—

6

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

0.35

1200

±20
900

1800

900
1800
2550

–40 ~ +150
–40 ~ +125

2500

3.5 ~ 4.5

3.5 ~ 4.5
1400

Limits

Typ.Min. Max.

—

7

—

1.8

2.0

0.143
—
—
—

4800

—
—
—
—
—

50

—
—
—

0.016
—
—
—

1
8

0.5

2.5
—
—

140

16

3

—

600
200
800
300
500

—

3.4

0.049

0.078
—

0.021

0.034

2.2

V
V

A

A

W

°C
°C

V
N • m
N • m

g

Unit

mA

V

µA

V

mΩ

nF

nC

ns

ns
µC

V

°C/W

*3
*3

Ω

Mar. 2003