Page 1
MITSUBISHI HVIGBT MODULES
CM800E6C-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM800E6C-66H
● IC ...................................................................800A
● V
CES ....................................................... 3300V
● Insulated Type
● 1-element in a Pack (for brake)
● AISiC Baseplate
APPLICATION
Traction drives, DC choppers, Dynamic braking choppers
HIGH POWER SWITCHING USE
INSULA TED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
190
±0.5
171
3 - M4 NUTS
screwing depth
min. 7.7
CM
57±0.1
C
79.4
±0.3
C
E
G
E
61.5
±0.1
±0.1
57
20.25
41.25
±0.3 ±0.3
57
CC
EE
±0.2
±0.3
61.5
±0.2
13
±0.1
6 - M8 NUTS
+0.1
–0.2
20
±0.1
±0.5
±0.2
40
124
140
±0.1
8 - φ7 MOUNTING HOLES
screwing depth
min. 16.5
±0.2
5.2
+1
0
±0.15
5
+1
0
38
28
C
G
E
C
E
CIRCUIT DIAGRAM
±0.3
40
LABEL
C
E
±0.2
15
(C)
AK(E)
±0.5
29.5
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
Page 2
MITSUBISHI HVIGBT MODULES
CM800E6C-66H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
V
CES
VGES
IC
ICM
IE
IEM
PC
Tj
Top
Tstg
Viso
tpsc
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
GE(th)
V
IGES
VCE(sat)
Cies
Coes
Cres
Qg
VEC
td(on)
tr
Eon
td(off)
tf
Eoff
trr
Qrr
Erec
VF
trr
Qrr
Erec
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
Collector-emitter voltage
Gate-emitter voltage
Collector current
(Note 2)
Emitter current
(Note 2)
Maximum power dissipation
(Note 3)
VGE = 0V, Tj = 25°C
V
CE = 0V, Tj = 25°C
T
C = 100°C
Pulse (Note 1)
Pulse (Note 1)
T
C = 25°C, IGBT part
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
RMS, sinusoidal, f = 60Hz, t = 1min.
V
CC = 2200V, VCES ≤ 3300V, VGE = 15V
T
j = 125°C
Item Conditions
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
(Note 2)
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
(Note 5)
Forward voltage
(Note 5)
Reverse recovery time
(Note 5)
Reverse recovery charge
(Note 5)
Reverse recovery energy
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. The symbols represent characteristics of the clamp diode (Clamp-Di).
j) should not exceed Tjmax rating (150°C).
CE = VCES, VGE = 0V, Tj = 25°C
V
I
C = 80mA, VCE = 10V, Tj = 25°C
GE = VGES, VCE = 0V, Tj = 25°C
V
I
C = 800A, VGE = 15V, Tj = 25°C (Note 4)
I
C = 800A, VGE = 15V, Tj = 125°C (Note 4)
V
CE = 10V, f = 100kHz
V
GE = 0V, Tj = 25°C
CC = 1650V, IC = 800A, VGE = 15V, Tj = 25°C
V
I
E = 800A, VGE = 0V, Tj = 25°C (Note 4)
I
E = 800A, VGE = 0V, Tj = 125°C (Note 4)
V
CC = 1650V, IC = 800A, VGE = ±15V
R
G(on) = 2.5Ω, Tj = 125°C, Ls = 100nH
Inductive load
V
CC = 1650V, IC = 800A, VGE = ±15V
R
G(off) = 2.5Ω, Tj = 125°C, Ls = 100nH
Inductive load
V
CC = 1650V, IC = 800A, VGE = ±15V
R
G(on) = 2.5Ω, Tj = 125°C, Ls = 100nH
Inductive load
I
F = 800A, VGE = 0V, Tj = 25°C (Note 4)
I
F = 800A, VGE = 0V, Tj = 125°C (Note 4)
V
CC = 1650V, IC = 800A, VGE = ±15V
di/dt
= 2600A/µs, Tj = 125°C, Ls = 100nH
Inductive load
–40 ~ +150
–40 ~ +125
–40 ~ +125
Limits
Min Typ Max
—
5.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
INSULATED TYPE
3300
±20
800
1600
800
1600
9600
6000
10
—
6.0
—
3.30
3.60
120
12.0
3.6
5.7
2.80
2.70
—
—
1.10
—
—
1.05
—
540
0.60
2.80
2.70
—
540
0.60
10
7.0
0.5
4.20
—
—
—
—
—
3.60
—
1.60
1.00
—
2.50
1.00
—
1.4
—
—
3.60
—
1.4
—
—
J/pulse
J/pulse
J/pulse
J/pulse
V
V
A
A
A
A
W
°C
°C
°C
V
µs
Unit
mA
V
µA
V
nF
nF
nF
µC
V
µs
µs
µs
µs
µs
µC
V
µs
µC
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
Page 3
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
THERMAL CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Thermal resistance
Contact thermal resistance
MECHANICAL CHARACTERISTICS
Symbol
M
CTI
d
a
ds
LC-E(int)
RC-E(int)
Mounting torque
Mass
—
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
Item Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Junction to Case, Clamp-Di part
Case to Fin, λ
Item Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
Clamp-Di part
T
C = 25°C, IGBT part
T
C = 25°C, Clamp-Di part
grease = 1W/m·K
MITSUBISHI HVIGBT MODULES
CM800E6C-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
Min Typ Max
—
—
—
—
Min Typ Max
7.0
3.0
1.0
—
600
19.5
32.0
—
—
—
—
—
—
—
8.0
Limits
—
—
—
1.5
—
—
—
18
24
0.20
0.30
13.0
25.0
25.0
13.0
—
6.0
2.0
—
—
—
—
—
—
—
—
Unit
K/kW
K/kW
K/kW
Unit
N·m
kg
—
mm
mm
nH
mΩ
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
Page 4
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
MITSUBISHI HVIGBT MODULES
CM800E6C-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
1600
T
j
= 125°C
1400
V
)
A
(
1200
GE
V
GE
1000
800
600
COLLECTOR CURRENT
400
200
0
COLLECTOR-EMITTER VOLTAGE (V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
6
)
V
V
GE
(
= 15V
(
TYPICAL
)
1600
V
CE
1400
= 20V
= 15V
V
GE
= 12V
V
GE
= 10V
)
A
(
1200
1000
800
600
COLLECTOR CURRENT
V
GE
= 8V
400
200
3421056
0
)
(
TYPICAL
)
6
TRANSFER CHARACTERISTICS
(
TYPICAL
)
= 20V
T
j
= 25°C
T
j
= 125°C
684201012
GATE-EMITTER VOLTAGE (V
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(
TYPICAL
)
)
5
4
3
2
1
T
j
= 25°C
T
j
COLLECTOR-EMITTER SATURATION VOLTAGE
0
400 8000 1200 1600
COLLECTOR CURRENT (A
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
= 125°C
)
)
5
V
(
4
3
2
1
EMITTER-COLLECTOR VOLTAGE
0
400 8000 1200 1600
EMITTER CURRENT (A
T
j
= 25°C
T
j
= 125°C
)
Jul. 2005
Page 5
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800E6C-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
3
10
VGE = 0V, Tj = 25°C
7
f = 100kHz
5
3
2
)
2
10
nF
(
7
5
3
2
1
10
CAPACITANCE
7
5
3
2
0
10
-1
23 57
10
COLLECTOR-EMITTER VOLTAGE (V
SWITCHING ENERGY CHARACTERISTICS
2.5
VCC = 1650V, VGE = ±15V
R
G(on) = RG(off) = 2.5Ω
Tj = 125°C, Inductive load
)
2
J/pulse
(
1.5
10
(
TYPICAL
0
)
23 57 23 57
10
1
HALF-BRIDGE
(
TYPICAL
)
Cies
Coes
Cres
Eon
Eoff
GATE CHARGE CHARACTERISTICS
(
TYPICAL
)
20
CC = 1650V, IC = 800A
V
j = 25°C
T
16
)
V
(
12
8
GATE-EMITTER VOLTAGE
4
2
10
)
0
GATE CHARGE
64208
(µC)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
4
VCC = 1650V, IC = 800A
GE = ±15V
V
)
Tj = 125°C, Inductive load
Eon
3
J/pulse
(
2
1
Erec
SWITCHING ENERGIES
0.5
0
COLLECTOR CURRENT (A
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
12008004000 1600
)
1
SWITCHING ENERGIES
0
GATE RESISTANCE
Eoff
Erec
15105020
(Ω)
Jul. 2005
Page 6
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800E6C-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME CHARACTERISTICS
2
10
CC
= 1650V, V
V
7
G(on)
= R
R
5
T
j
= 125°C, Inductive load
3
2
)
µs
1
10
(
7
5
3
2
0
10
SWITCHING TIMES
7
5
3
2
-1
10
1
10
t
t
23 57
COLLECTOR CURRENT (A
HALF-BRIDGE
(
TYPICAL
GE
G(off)
= 2.5Ω
d(off)
d(on)
2
10
)
= ±15V
t
r
t
f
23 57 23 57
10
3
)
10
REVERSE RECOVERY CHARACTERISTICS
2
10
V
CC
= 1650V, V
7
R
G(on)
5
3
)
2
µs
(
1
10
7
5
3
2
0
10
7
5
REVERSE RECOVERY TIME
3
2
-1
4
10
10
= R
j
= 125°C, Inductive load
T
l
t
1
23 57
rr
rr
G(off)
= 2.5Ω
2
10
(
TYPICAL
GE
)
= ±15V
23 57 23 57
10
EMITTER CURRENT (A
4
10
7
5
)
A
3
(
2
3
10
7
5
3
2
2
10
7
5
REVERSE RECOVERY CURRENT
3
2
1
3
10
10
4
)
FREE-WHEEL DIODE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1.2
Single Pulse, T
R
th(j–c)Q
R
th(j–c)R
1.0
C
= 13K/kW
= 25K/kW
= 25°C
0.8
0.6
0.4
0.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
0
10
-3
23 57
10
-2
23 57
TIME (s
10
-1
23 57
)
10
0
23 57
10
1
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
Page 7
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800E6C-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA
2500
V
CC
≤ 2200V, V
j
= 125°C, R
T
2000
)
A
(
1500
1000
COLLECTOR CURRENT
500
0
COLLECTOR-EMITTER VOLTAGE (V
G(off)
(
RBSOA
GE
= +/-15V
≥ 2.5Ω
)
3000200010000 4000
FREE-WHEEL DIODE REVERSE
RECOVERY SAFE OPERATING AREA
2500
V
CC
≤ 2200V, di/dt ≤ 3600A/µs
T
j
= 125°C
)
A
(
2000
1500
1000
500
REVERSE RECOVERY CURRENT
0
)
EMITTER-COLLECTOR VOLTAGE (V
(
RRSOA
)
3000200010000 4000
)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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