MITSUBISHI CM800E6C-66H User Guide

MITSUBISHI HVIGBT MODULES

CM800E6C-66H

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

CM800E6C-66H

● IC ...................................................................800A

● V

CES ....................................................... 3300V

● Insulated Type

● 1-element in a Pack (for brake)

● AISiC Baseplate

APPLICATION

Traction drives, DC choppers, Dynamic braking choppers

HIGH POWER SWITCHING USE

INSULA TED TYPE

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

190

±0.5

171

3 - M4 NUTS

screwing depth
min. 7.7

CM

57±0.1

C

79.4

±0.3

C

E

G

E

61.5

±0.1

±0.1

57

20.25

41.25

±0.3 ±0.3

57

CC

EE

±0.2
±0.3

61.5

±0.2

13

±0.1

6 - M8 NUTS

+0.1

–0.2

20

±0.1

±0.5

±0.2

40

124

140

±0.1

8 - φ7 MOUNTING HOLES

screwing depth
min. 16.5

±0.2

5.2

+1

0

±0.15

5

+1

0

38

28

C

G
E

C

E

CIRCUIT DIAGRAM

±0.3

40

LABEL

C

E

±0.2

15

(C)

AK(E)

±0.5

29.5

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Jul. 2005

MITSUBISHI HVIGBT MODULES

CM800E6C-66H

HIGH POWER SWITCHING USE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS

Symbol Item Conditions UnitRatings

V

CES

VGES
IC
ICM
IE
IEM
PC
Tj
Top
Tstg
Viso

tpsc

ELECTRICAL CHARACTERISTICS

Symbol

I

CES

GE(th)

V

IGES

VCE(sat)

Cies
Coes
Cres
Qg

VEC

td(on)
tr
Eon
td(off)
tf
Eoff
trr
Qrr
Erec

VF

trr
Qrr
Erec

Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).

Collector-emitter voltage
Gate-emitter voltage

Collector current

(Note 2)

Emitter current

(Note 2)

Maximum power dissipation

(Note 3)

VGE = 0V, Tj = 25°C
V

CE = 0V, Tj = 25°C

T

C = 100°C

Pulse (Note 1)

Pulse (Note 1)
T

C = 25°C, IGBT part

Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width

RMS, sinusoidal, f = 60Hz, t = 1min.
V

CC = 2200V, VCES ≤ 3300V, VGE = 15V

T

j = 125°C

Item Conditions

Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge

(Note 2)

Emitter-collector voltage

Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy

(Note 2)

Reverse recovery time

(Note 2)

Reverse recovery charge

(Note 2)

Reverse recovery energy

(Note 5)

Forward voltage

(Note 5)

Reverse recovery time

(Note 5)

Reverse recovery charge

(Note 5)

Reverse recovery energy

2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

5. The symbols represent characteristics of the clamp diode (Clamp-Di).

j) should not exceed Tjmax rating (150°C).

CE = VCES, VGE = 0V, Tj = 25°C

V

I

C = 80mA, VCE = 10V, Tj = 25°C

GE = VGES, VCE = 0V, Tj = 25°C

V
I

C = 800A, VGE = 15V, Tj = 25°C (Note 4)

I

C = 800A, VGE = 15V, Tj = 125°C (Note 4)

V

CE = 10V, f = 100kHz

V

GE = 0V, Tj = 25°C
CC = 1650V, IC = 800A, VGE = 15V, Tj = 25°C

V
I

E = 800A, VGE = 0V, Tj = 25°C (Note 4)

I

E = 800A, VGE = 0V, Tj = 125°C (Note 4)

V

CC = 1650V, IC = 800A, VGE = ±15V

R

G(on) = 2.5Ω, Tj = 125°C, Ls = 100nH

Inductive load
V

CC = 1650V, IC = 800A, VGE = ±15V

R

G(off) = 2.5Ω, Tj = 125°C, Ls = 100nH

Inductive load
V

CC = 1650V, IC = 800A, VGE = ±15V

R

G(on) = 2.5Ω, Tj = 125°C, Ls = 100nH

Inductive load
I

F = 800A, VGE = 0V, Tj = 25°C (Note 4)

I

F = 800A, VGE = 0V, Tj = 125°C (Note 4)

V

CC = 1650V, IC = 800A, VGE = ±15V

di/dt

= 2600A/µs, Tj = 125°C, Ls = 100nH

Inductive load

–40 ~ +150
–40 ~ +125
–40 ~ +125

Limits

Min Typ Max

—

5.0

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

INSULATED TYPE

3300

±20
800

1600

800
1600
9600

6000

10

—

6.0

—

3.30

3.60
120

12.0

3.6

5.7

2.80

2.70

—
—

1.10

—
—

1.05

—

540

0.60

2.80

2.70

—

540

0.60

10

7.0

0.5

4.20

—
—
—
—
—

3.60

—

1.60

1.00

—

2.50

1.00

—

1.4

—
—

3.60

—

1.4

—
—

J/pulse

J/pulse

J/pulse

J/pulse

V
V
A
A
A
A

W

°C
°C
°C

V

µs

Unit

mA

V

µA

V

nF
nF
nF
µC

V

µs
µs

µs
µs

µs
µC

V

µs
µC

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Jul. 2005

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

THERMAL CHARACTERISTICS

Symbol

Rth(j-c)Q

Rth(j-c)R

Rth(c-f)

Thermal resistance

Contact thermal resistance

MECHANICAL CHARACTERISTICS

Symbol

M

CTI
d

a

ds

LC-E(int)

RC-E(int)

Mounting torque

Mass

—

Comparative tracking index
Clearance distance in air
Creepage distance along surface

Internal inductance

Internal lead resistance

Item Conditions

Junction to Case, IGBT part
Junction to Case, FWDi part
Junction to Case, Clamp-Di part
Case to Fin, λ

Item Conditions

M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw

IGBT part
Clamp-Di part
T

C = 25°C, IGBT part

T

C = 25°C, Clamp-Di part

grease = 1W/m·K

MITSUBISHI HVIGBT MODULES

CM800E6C-66H

HIGH POWER SWITCHING USE

INSULATED TYPE

Limits

Min Typ Max

—
—
—
—

Min Typ Max

7.0

3.0

1.0

—

600

19.5

32.0

—
—
—
—

—
—
—

8.0

Limits

—
—
—

1.5

—
—
—

18
24

0.20

0.30

13.0

25.0

25.0

13.0

—

6.0

2.0

—
—
—
—
—
—
—
—

Unit

K/kW

K/kW

K/kW

Unit

N·m

kg

—

mm
mm

nH

mΩ

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Jul. 2005