MITSUBISHI CM800E2Z-66H User Guide

MITSUBISHI HVIGBT MODULES

CM800E2Z-66H

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

CM800E2Z-66H

● IC...................................................................800A

● V

CES ....................................................... 3300V

● Insulated T ype

● 1-elements in a pack (for brake)

APPLICATION

DC choppers, Dynamic braking choppers.

HIGH POWER SWITCHING USE

INSULATED TYPE

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

190

3 - M4 NUTS

CM

171

±0.25

±0.25

57

C

79.4

57

C

E

G

E

20.25

41.25

61.5

57

±0.25

CC

EE

61.5

13

6 - M8 NUTS

20

±0.25

40

140

124

8 - φ7MOUNTING HOLES

5.2

C

G
E

C

E

CIRCUIT DIAGRAM

15

40

C

E

(C)

AK(E)

5

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

38

28

LABEL

29.5

Mar. 2003

MITSUBISHI HVIGBT MODULES

CM800E2Z-66H

HIGH POWER SWITCHING USE

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS (Tj = 25°C)

Symbol Item Conditions UnitRatings
VCES
VGES
IC
ICM
IE
IEM
PC
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

(Note 2)

Emitter current

(Note 2)

Maximum collector dissipation

(Note 3)

Junction temperature
Storage temperature
Isolation voltage

—

Mounting torque

—

Mass

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol
I

CES

V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
trr
Qrr
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
VFM
trr
Qrr
Rth(j-c)
Rth(c-f)

Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time

(Note 2)

Emitter-collector voltage

(Note 2)

Reverse recovery time

(Note 2)

Reverse recovery charge
Thermal resistance

Contact thermal resistance
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance

2. I

E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Item Conditions

j) should not increase beyond 150°C.

VGE = 0V

CE = 0V

V
DC, T

C = 100°C

Pulse (Note 1)

Pulse (Note 1)

C = 25°C, IGBT part

T

—

—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value

V

CE = VCES, VGE = 0V

IC = 80mA, VCE = 10V
V

GE = VGES, VCE = 0V

T

j = 25°C
j = 125°C

T

CE = 10V

V
V

GE = 0V
CC = 1650V, IC = 800A, VGE = 15V

V
V

CC = 1650V, IC = 800A

V

GE1 = VGE2 = 15V

R

G = 2.5Ω

I

C = 800A, VGE = 15V (Note 4)

Resistive load switching operation
I

E = 800A, VGE = 0V

I

E = 800A

die / dt = –1600A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied (Per 2/3 module)
IF = 800A, Clamp diode part
I

F = 800A

di

f / dt = –1600A / µs, Clamp diode part

Junction to case, Clamp diode part
Case to fin, conductive grease applied (Per 1/3 module)

10400
–40 ~ +150
–40 ~ +125

6.67 ~ 13.00

2.84 ~ 6.00

0.88 ~ 2.00

Limits

Min Typ Max

—

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

INSULATED TYPE

3300

±20
800

1600

800

1600

6000

2.2

—

6.04.5 7.5

—

3.80

4.00
120

12.0

3.6

5.7
—
—
—
—

2.80
—

270
—
—

0.008

3.00
—

270

—

0.008

10

0.5

4.94
—
—
—
—
—

1.60

2.00

2.50

1.00

3.64

1.40
—

0.012

0.024
—

3.90

1.40
—

0.024
—

V
V
A
A
A
A

W

°C
°C

V
N·m
N·m
N·m

kg

Unit

mA

V

µA

V

nF
nF
nF

µC
µs
µs
µs
µs

V

µs
µC

K/W
K/W
K/W

V

µs
µC

K/W
K/W

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Mar. 2003