MITSUBISHI CM800DZB-34N User Manual

MITSUBISHI HVIGBT MODULES

CM800DZB-34N

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE

CM800DZB-34N

● IC ...................................................................800A

● V

CES ....................................................... 1700V

● Insulated Type

● 2-element in a Pack

● AISiC Baseplate

● Trench Gate IGBT : CSTBT

● Soft Reverse Recovery Diode

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

INSULATED TYPE

TM

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

130

6 - M4 NUTS

screwing depth min. 7.7

114

57

±0.25

E1

C1

CM

E1 E2

C1

G1 G2

11.85

57

±0.25

C2

E2

C2

16

18

4440

5753

55.2

4 - M8 NUTS

20

±0.25

30

140

124

6 - φ 7 MOUNTING HOLES

screwing depth min. 16.5

+2

0

+2

0

38

5

28

4(E1)

E1

G1

C1

3(C1)

CIRCUIT DIAGRAM

11.5

14

35

5

LABEL

2(C2)

C2

G2

E2

1(E2)

31.5

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Sep. 2009

MITSUBISHI HVIGBT MODULES

CM800DZB-34N

HIGH POWER SWITCHING USE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS

Symbol Item Conditions Ratings Unit

V

CES

V

GES

I

C

I

CM

I

E

IEM P

c

V

iso

T

j

T

op

T

stg

t

psc

ELECTRICAL CHARACTERISTICS

Symbol Item Conditions

I

CES

V

GE(th)

I

GES

C

ies

C

oes

C

res

Q

g

V

CE(sat)

t

d(on)

t

r

E

on(10%)

t

d(off)

t

f

E

off(10%)

V

EC

t

rr

Q

rr

E

rec(10%)

Collector-emitter voltage Gate-emitter voltage

Collector current

Emitter current (Note 2)

Maximum power dissipation (Note 3) Isolation voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width

Collector cutoff current

Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Tu r n-on delay time Tu r n-on rise time Tu r n-on switching energy

(Note 5) Tu r n-off delay time Tu r n-off fall time Tu r n-off switching energy

(Note 5) Emitter-collector voltage

(Note 2) Reverse recovery time

(Note 2) Reverse recovery charge

(Note 2) Reverse recovery energy

(Note 2), (Note 5)

VGE = 0V, Tj = 25°C V

CE

= 0V, Tj = 25°C

DC, T

c

= 80°C

Pulse (Note 1) DC Pulse (Note 1) T

c

= 25°C, IGBT part

RMS, sinusoidal, f = 60Hz, t = 1 min.

V

CC

= 1000V, VCE ≤ V

V

CE

= V

CES

, VGE = 0V

CE

= 10 V, IC = 80 mA, Tj = 25°C

V V

GE

= V

GES

, VCE = 0V, Tj = 25°C

V

CE

= 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C

V

CC

= 900 V, IC = 800 A, VGE = ±15 V, Tj = 25°C

I

C

= 800 A (Note 4)

V

GE

= 15 V

V

CC

= 900 V, IC = 800 A, VGE = ±15 V

R

G(on)

= 1.6 Ω, Tj = 125°C, Ls = 150 nH

CES

, VGE = 15V, Tj = 125°C

T

j

= 25°C

T

j

= 125°C

Tj = 25°C T

j

= 125°C

Inductive load

CC

= 900 V, IC = 800 A, VGE = ±15 V

V R

G(off)

= 3.9 Ω, Tj = 125°C, Ls = 150 nH

Inductive load

E

= 800 A (Note 4)

I V

GE

= 0 V

CC

= 900 V, IE = 800 A, VGE = ±15 V

V R

G(on)

= 1.6 Ω, Tj = 125°C, Ls = 150 nH

Tj = 25°C T

j

= 125°C

Inductive load

— —

5.5 — — — — — — — — —

—

— —

—

— —

—

INSULATED TYPE

1700

± 20 800

1600

800 1600 5200 4000

–40 ~ +150 –40 ~ +125 –40 ~ +125

10

Limits

Ty p

—

2.5

6.5 —

132

7.2

2.1

9.1

2.10

2.35 — —

0.30

— —

0.20

2.20

1.85

—

260

0.18

MaxMin

3 6

7.5

0.5 — — — —

2.70 —

1.50

0.60

—

3.00

0.60

—

3.00 —

1.50

—

V V A A A A

W

V

°C °C °C µs

Unit

mA

V

µA nF nF nF µC

V

µs µs

J/P

µs µs

J/P

V

µs

µC

J/P

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Sep. 2009

2

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

THERMAL CHARACTERISTICS

Symbol Item Conditions

th(j-c)Q

R R

th(j-c)R

R

th(c-f)

MECHANICAL CHARACTERISTICS

Symbol Item Conditions

M

t

M

s

M

t

m CTI d

a

d

s

L

P CE

R

CC’+EE’

Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed T

Thermal resistance: IGBT part Thermal resistance: FWDi part

Contact thermal resistance

Junction to Case, 1/2 module Junction to Case, 1/2 module Case to Fin, λ

grease

= 1W/m·K, D

1/2 module

(c-f)

= 100 µm,

M8: Main terminals screw

Mounting torque

M6: Mounting screw

M4: Auxiliary terminals screw Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance

2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

3. Junction temperature (Tj) should not exceed T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

5. E

on(10%)

/ E

off(10%)

/ E

rec(10%)

are the integral of

T

c

= 25°C

jmax

rating (150°C).

0.1VCE x 0.1IC x dt.

opmax

MITSUBISHI HVIGBT MODULES

CM800DZB-34N

HIGH POWER SWITCHING USE

INSULATED TYPE

Limits

19.5

32.0

rating (125°C).

— —

—

7.0

3.0

1.0 —

600

— —

Ty p

— —

18.0

Limits

Ty p

— — —

1.0 — — — 18

0.30

MaxMin

24.0

36.0

—

MaxMin

13.0

6.0

2.0 — — — — — —

Unit

K/kW K/kW

K/kW

Unit

N·m N·m N·m

kg

— mm mm

nH mΩ

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Sep. 2009

3