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MITSUBISHI HVIGBT MODULES
CM800DZ-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
CM800DZ-34H
● IC ...................................................................800A
● V
CES ....................................................... 1700V
● Insulated Type
● 2-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULA TED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
130
6 - M4 NUTS
screwing depth
min. 7.7
114
57
±0.25
E1
C1
CM
E1 E2
C1
G1 G2
16
11.85
18
55.2
C2
C2
E2
57
±0.25
4440
5753
4 - M8 NUTS
20
±0.25
30
140
124
6 - φ 7 MOUNTING HOLES
screwing depth
min. 16.5
4(E1)
E1
G1
C1
3(C1)
CIRCUIT DIAGRAM
11.5
14
35
2(C2)
C2
G2
E2
1(E2)
5
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
+2
0
+2
0
38
5
28
LABEL
31.5
Jul. 2005
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MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
V
CES
VGES
IC
ICM
IE
IEM
PC
Tj
Top
Tstg
Viso
tpsc
Collector-emitter voltage
Gate-emitter voltage
Collector current
(Note 2)
Emitter current
(Note 2)
Maximum power dissipation
(Note 3)
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
GE(th)
V
IGES
VCE(sat)
Cies
Coes
Cres
Qg
VEC
td(on)
tr
Eon
td(off)
tf
Eoff
trr
Qrr
Erec
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
(Note 2)
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Item Conditions
j) should not exceed Tjmax rating (150°C).
V
GE = 0V, Tj = 25°C
V
CE = 0V, Tj = 25°C
T
C = 80°C
Pulse (Note 1)
Pulse (Note 1)
T
C = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
V
CC = 1150V, VCES ≤ 1700V, VGE = 15V
T
j = 125°C
VCE = VCES, VGE = 0V, Tj = 25°C
I
C = 80mA, VCE = 10V, Tj = 25°C
V
GE = VGES, VCE = 0V, Tj = 25°C
I
C = 800A, VGE = 15V, Tj = 25°C (Note 4)
I
C = 800A, VGE = 15V, Tj = 125°C (Note 4)
CE = 10V, f = 100kHz
V
V
GE = 0V, Tj = 25°C
CC = 850V, IC = 800A, VGE = 15V, Tj = 25°C
V
I
E = 800A, VGE = 0V, Tj = 25°C (Note 4)
I
E = 800A, VGE = 0V, Tj = 125°C (Note 4)
V
CC = 850V, IC = 800A, VGE = ±15V
R
G(on) = 3.3Ω, Tj = 125°C, Ls = 150nH
Inductive load
V
CC = 850V, IC = 800A, VGE = ±15V
R
G(off) = 3.3Ω, Tj = 125°C, Ls = 150nH
Inductive load
V
CC = 850V, IC = 800A, VGE = ±15V
R
G(on) = 3.3Ω, Tj = 125°C, Ls = 150nH
Inductive load
–40 ~ +150
–40 ~ +125
–40 ~ +125
Limits
Min Typ Max
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
INSULATED TYPE
1700
±20
800
1600
800
1600
6200
4000
10
—
5.5
—
2.60
3.10
72
9.0
3.6
6.6
2.30
2.00
—
—
350
—
—
260
—
300
120
12
6.5
0.5
3.30
—
—
—
—
—
3.00
—
1.60
1.30
—
2.70
0.50
—
2.70
—
—
mJ/pulse
mJ/pulse
mJ/pulse
V
V
A
A
A
A
W
°C
°C
°C
V
µs
Unit
mA
V
µA
V
nF
nF
nF
µC
V
µs
µs
µs
µs
µs
µC
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
THERMAL CHARACTERISTICS
Symbol
th(j-c)Q
R
Rth(j-c)R
Rth(c-f)
Thermal resistance
Contact thermal resistance
MECHANICAL CHARACTERISTICS
Symbol
M
CTI
d
a
d
s
L
C-E(int)
R
C-E(int)
Mounting torque
Mass
—
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
Item Conditions
Junction to Case, IGBT part, 1/2 module
Junction to Case, FWDi part, 1/2 module
Case to Fin, λ
Item Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
C = 25°C
T
grease = 1W/m·K, 1/2 module
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
Min Typ Max
—
—
—
Min Typ Max
7.0
3.0
1.0
—
250
10.0
15.0
—
—
—
—
16.0
Limits
—
—
—
1.0
—
—
—
18
0.16
20.0
34.0
13.0
—
6.0
2.0
—
—
—
—
—
—
Unit
K/kW
K/kW
K/kW
Unit
N·m
kg
—
mm
mm
nH
mΩ
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
1600
T
j
= 25°C
1400
V
GE
)
A
(
1200
= 20V
1000
800
600
COLLECTOR CURRENT
400
200
0
COLLECTOR-EMITTER VOLTAGE (V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
)
V
V
GE
(
= 15V
(
TYPICAL
)
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8V
3 4210 56
)
(
TYPICAL
)
TRANSFER CHARACTERISTICS
1600
V
CE
= 10V
1400
)
1200
A
(
1000
800
600
COLLECTOR CURRENT
400
200
0
T
j
= 25°C
j
= 125°C
T
GATE-EMITTER VOLTAGE (V
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
66
(
TYPICAL
)
6 8420 10 12
(
TYPICAL
)
)
5
4
3
2
1
T
j
= 25°C
j
= 125°C
COLLECTOR-EMITTER SATURATION VOLTAGE
0
400 8000 1200 1600
COLLECTOR CURRENT (A
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
T
)
)
5
V
(
4
3
2
1
EMITTER-COLLECTOR VOLTAGE
0
400 8000 1200 1600
EMITTER CURRENT (A
T
j
= 25°C
j
= 125°C
T
)
Jul. 2005
Page 5
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
3
10
V
GE
7
f = 100kHz
5
3
2
)
2
10
nF
(
7
5
3
2
1
10
CAPACITANCE
7
5
3
2
0
10
-1
23 57
10
COLLECTOR-EMITTER VOLTAGE (V
SWITCHING ENERGY CHARACTERISTICS
1000
V
CC
R
G(on)
T
j
)
= 125°C, Inductive load
800
= 0V, T
j
= 850V, V
= R
G(off)
(
TYPICAL
)
= 25°C
0
23 57 23 57
10
10
1
HALF-BRIDGE
(
TYPICAL
GE
= ±15V
)
= 3.3Ω
GATE CHARGE CHARACTERISTICS
(
TYPICAL
)
20
V
CC
= 850V, IC = 800A
j
= 25°C
T
16
)
V
(
C
ies
12
8
C
oes
GATE-EMITTER VOLTAGE
C
res
2
10
)
4
0
4 620 810
GATE CHARGE
(µC)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
1200
V
CC
= 850V, IC = 800A
V
GE
= ±15V
T
j
1000
E
on
)
= 125°C, Inductive load
E
on
J/pulse
(m
600
E
off
400
200
SWITCHING ENERGIES
0
COLLECTOR CURRENT (A
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
E
rec
12008004000 1600
)
J/pulse
800
(m
600
400
SWITCHING ENERGIES
200
0
GATE RESISTANCE
E
off
E
rec
15 20105025
(Ω)
Jul. 2005
Page 6
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM800DZ-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME CHARACTERISTICS
1
10
V
CC
= 850V, V
7
R
G(on)
5
3
2
= R
j
= 125°C, Inductive load
T
)
µs
0
10
(
7
5
3
2
-1
10
SWITCHING TIMES
7
5
3
2
-2
10
1
10
23 57
COLLECTOR CURRENT (A
HALF-BRIDGE
(
TYPICAL
GE
= ±15V
G(off)
= 3.3Ω
t
f
t
r
2
10
23 57 23 57
)
t
d(off)
t
d(on)
10
3
10
4
)
REVERSE RECOVERY CHARACTERISTICS
2
10
V
CC
= 850V, V
7
R
G(on)
5
3
)
2
µs
(
1
10
7
5
3
2
0
10
7
5
REVERSE RECOVERY TIME
3
2
-1
10
10
= R
T
j
= 125°C, Inductive load
1
23 57
(
TYPICAL
GE
= ±15V
G(off)
= 3.3Ω
2
10
23 57 23 57
EMITTER CURRENT (A
)
4
10
7
5
)
A
3
(
2
3
10
7
5
l
10
rr
t
rr
3
10
3
2
2
10
7
5
REVERSE RECOVERY CURRENT
3
2
1
10
4
)
FREE-WHEEL DIODE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1.2
Single Pulse, T
th(j–c)Q
R
R
th(j–c)R
1.0
C
= 20K/kW
= 34K/kW
= 25°C
0.8
0.6
0.4
0.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
0
10
-3
23 57
-2
10
23 57 23 57 23 57
-1
10
TIME (s
10
)
0
10
REVERSE BIAS SAFE OPERATING AREA
(
RBSOA
)
2500
V
CC
)
A
(
2000
≤ 1150V, V
T
j
= 125°C, R
GE
G(off)
= +/-15V
≥ 3.3Ω
1500
1000
COLLECTOR CURRENT
500
1
0
COLLECTOR-EMITTER VOLTAGE (V
150010005000 2000
)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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