MITSUBISHI CM800DZ-34H User Guide

MITSUBISHI HVIGBT MODULES

CM800DZ-34H

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE

CM800DZ-34H

● IC ...................................................................800A

● V

CES ....................................................... 1700V

● Insulated Type

● 2-element in a Pack

● AISiC Baseplate

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

INSULA TED TYPE

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

130

6 - M4 NUTS

screwing depth
min. 7.7

114

57

±0.25

E1

C1

CM

E1 E2

C1

G1 G2

16

11.85

18

55.2

C2

C2

E2

57

±0.25

4440

5753

4 - M8 NUTS

20

±0.25

30

140

124

6 - φ 7 MOUNTING HOLES

screwing depth
min. 16.5

4(E1)

E1

G1

C1

3(C1)

CIRCUIT DIAGRAM

11.5

14

35

2(C2)

C2

G2

E2

1(E2)

5

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

+2

0

+2

0

38

5

28

LABEL

31.5

Jul. 2005

MITSUBISHI HVIGBT MODULES

CM800DZ-34H

HIGH POWER SWITCHING USE

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS

Symbol Item Conditions UnitRatings

V

CES

VGES
IC
ICM
IE
IEM
PC
Tj
Top
Tstg
Viso

tpsc

Collector-emitter voltage
Gate-emitter voltage

Collector current

(Note 2)

Emitter current

(Note 2)

Maximum power dissipation

(Note 3)

Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width

ELECTRICAL CHARACTERISTICS

Symbol

I

CES

GE(th)

V

IGES

VCE(sat)

Cies
Coes
Cres
Qg

VEC

td(on)
tr
Eon
td(off)
tf
Eoff
trr
Qrr
Erec

Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).

Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge

(Note 2)

Emitter-collector voltage

Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy

(Note 2)

Reverse recovery time

(Note 2)

Reverse recovery charge

(Note 2)

Reverse recovery energy

2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Item Conditions

j) should not exceed Tjmax rating (150°C).

V

GE = 0V, Tj = 25°C

V

CE = 0V, Tj = 25°C

T

C = 80°C

Pulse (Note 1)

Pulse (Note 1)
T

C = 25°C, IGBT part

RMS, sinusoidal, f = 60Hz, t = 1min.
V

CC = 1150V, VCES ≤ 1700V, VGE = 15V

T

j = 125°C

VCE = VCES, VGE = 0V, Tj = 25°C

I

C = 80mA, VCE = 10V, Tj = 25°C

V

GE = VGES, VCE = 0V, Tj = 25°C

I

C = 800A, VGE = 15V, Tj = 25°C (Note 4)

I

C = 800A, VGE = 15V, Tj = 125°C (Note 4)

CE = 10V, f = 100kHz

V
V

GE = 0V, Tj = 25°C
CC = 850V, IC = 800A, VGE = 15V, Tj = 25°C

V
I

E = 800A, VGE = 0V, Tj = 25°C (Note 4)

I

E = 800A, VGE = 0V, Tj = 125°C (Note 4)

V

CC = 850V, IC = 800A, VGE = ±15V

R

G(on) = 3.3Ω, Tj = 125°C, Ls = 150nH

Inductive load
V

CC = 850V, IC = 800A, VGE = ±15V

R

G(off) = 3.3Ω, Tj = 125°C, Ls = 150nH

Inductive load
V

CC = 850V, IC = 800A, VGE = ±15V

R

G(on) = 3.3Ω, Tj = 125°C, Ls = 150nH

Inductive load

–40 ~ +150
–40 ~ +125
–40 ~ +125

Limits

Min Typ Max

—

4.5

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

INSULATED TYPE

1700

±20
800

1600

800
1600
6200

4000

10

—

5.5

—

2.60

3.10
72

9.0

3.6

6.6

2.30

2.00

—
—

350

—
—

260

—
300
120

12

6.5

0.5

3.30
—
—
—
—
—

3.00
—

1.60

1.30
—

2.70

0.50
—

2.70
—
—

mJ/pulse

mJ/pulse

mJ/pulse

V
V
A
A
A
A

W

°C
°C
°C

V

µs

Unit

mA

V

µA

V

nF
nF
nF
µC

V

µs
µs

µs
µs

µs
µC

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Jul. 2005