MITSUBISHI CM75TL-12NF User Manual

CM75TL-12NF

MITSUBISHI IGBT MODULES

CM75TL-12NF

HIGH POWER SWITCHING USE

¡IC..................................................................... 75A

¡V

CES ............................................................600V

¡Insulated Type
¡6-elements in a pack

APPLICATION

AC drive inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM

LABEL

12011

106

±0.5

17 1740.78

UPVPWP

AB

UVW

12 12

23 23 23

12

35

6-M5 NUTS

+1

–0.5

22

7

13.62

12

NP

12

10.75

(19.75)

12

(SCREWING DEPTH)

CN

81111

B

12

22

2-φ5.5
MOUNTING HOLES

55

32

(13.5)

11.75

23.2

16

3

Housing Type of A and B
(J.S.T.Mfg.Co.Ltd)
A = B8P-VH-FB-B, B = B2P-VH-FB-B

P

UP-1
UP-2

NC

BU

NC

CN-7
CN-8

CN-5
CN-6

NC

N

CIRCUIT DIAGRAM

VP-1
VP-2

CN-3
CN-4

Dimensions in mm

WP-1
WP-2

V

CN-1
CN-2

W

Jun. 2004

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)

MITSUBISHI IGBT MODULES

CM75TL-12NF

HIGH POWER SWITCHING USE

Symbol Parameter

V

CES

VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

—

Torque strength

—

Weight

—

G-E Short
C-E Short
DC, T

C = 102°C

Pulse (Note 2)

Pulse (Note 2)
T

C = 25°C

Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M5
Typical value

Conditions UnitRatings

*1

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

I

CES

V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q

th(j-c)R

R

th(c-f)

R
RG

1 : Tc measured point is just under the chips.

*

2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*

Note 1. I

Collector cutoff current
Gate-emitter threshold voltage

Gate leakage current
Collector-emitter saturation voltage

Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance
Contact thermal resistance

External gate resistance

If you use this value, R

E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (T

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause neglible temperature rise.

Parameter

CE = VCES, VGE = 0V

V
IC = 7.5mA, VCE = 10V

V

GE = VGES, VCE = 0V

I

C = 75A, VGE = 15V

CE = 10V

V
V

GE = 0V
CC = 300V, IC = 75A, VGE = 15V

V

V

CC = 300V, IC = 75A

V

GE1 = VGE2 = 15V

R

G = 8.3Ω, Inductive load switching operation

I

E = 75A

E = 75A, VGE = 0V

I
IGBT part (1/6 module)
FWDi part (1/6 module)
Case to fin, Thermal compound Applied (1/6 module)

th(f-a) should be measured just under the chips.

j) should not increase beyond 150°C.

Test conditions

Tj = 25°C
T

j = 125°C

*1

*1

j) does not exceed Tjmax rating.

600
±20

75

150

75
150
430

–40 ~ +150
–40 ~ +125

2500

2.5 ~ 3.5

2.5 ~ 3.5
350

Limits

Min. Max.

—

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

*2

—

8.3

Typ.

—

68

7V

—

1.7

1.7
—
—
—

300

—
—
—
—
—

1.2
—
—
—

0.085
—

1

0.5

2.2
—

11.3

1.4

0.45
—

120
100
300
300
100

—

2.8

0.29

0.51
—
83

V
V
A
A
A
A

W

°C
°C

V
N • m
N • m

g

Unit

mA

µA

V

nF
nF
nF
nC

ns
ns
ns
ns
ns

µC

V

°C/W
°C/W
°C/W

Ω

Jun. 2004

PERFORMANCE CURVES

OUTPUT CHARACTERISTICS

150

V

GE

=

(A)

C

20V

100

(TYPICAL)

15

13

Tj = 25°C

12

MITSUBISHI IGBT MODULES

HIGH POWER SWITCHING USE

COLLECTOR-EMITTER SATURATION

(V)

CE (sat)

VOLTAGE CHARACTERISTICS

4

V

GE

3

(TYPICAL)

= 15V

CM75TL-12NF

50

COLLECTOR CURRENT I

0

0246810

COLLECTOR-EMITTER VOLTAGE V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

10

(V)

8

CE (sat)

6

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE V

0

8

Tj = 25°C

IC = 75A

IC = 150A

IC = 30A

11

10

CE

2

1

COLLECTOR-EMITTER

9

SATURATION VOLTAGE V

0

0 10050 150

(V)

COLLECTOR CURRENT IC (A)

Tj = 25°C
T

j

= 125°C

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

7
5

(A)

E

3
2

2

10

7
5

3

EMITTER CURRENT I

2

1

2012 146 8 10 16 18

10

012 435

(TYPICAL)

Tj = 25°C

j

= 125°C

T

GATE-EMITTER VOLTAGE V

CAPACITANCE–V
CHARACTERISTICS

2

10

7
5

(nF)

3

res

2

, C

1

10

oes

7

, C

5

ies

3
2

0

10

7
5

3
2

CAPACITANCE C

10

V

GE

–1

–1

10

2

(TYPICAL)

= 0V

0

10

357 2

357 2

COLLECTOR-EMITTER VOLTAGE V

10

CE

1

GE

(V)

C

ies

C

oes

C

res

357

CE

10

(V)

EMITTER-COLLECTOR VOLTAGE V

EC

(V)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

7
5

3
2

2

10

7
5

3
2

1

10

7
5

SWITCHING TIME (ns)

3
2

0

2

10

10

0

(TYPICAL)

t

d(off)

t

f

t

d(on)

t

r

57

10

1

Conditions:

CC

= 300V

V
V

GE

= ±15V

G

= 8.3Ω

R

j

= 125°C

T
Inductive load

23 5723

10

2

COLLECTOR CURRENT IC (A)

Jun. 2004

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

3

10

(A)

rr

(ns)

rr

REVERSE RECOVERY TIME t

REVERSE RECOVERY CURRENT l

10

10

7
5

3
2

2

7
5

3
2

1

10

0

Conditions:
V

CC
GE

V

G

= 8.3Ω

R

j

= 25°C

T
Inductive load

(TYPICAL)

= 300V
= ±15V

t

rr

I

rr

23 57

10

1

23 57

EMITTER CURRENT I

MITSUBISHI IGBT MODULES

CM75TL-12NF

HIGH POWER SWITCHING USE

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT part & FWDi part)

10

10

10

10

10

1

–1

7
5

3
2

–2

7
5

3
2

–3

–3

–3

10

0

10

7
5

(ratio)

3
2

th (j–c)

–1

10

7
5

3
2

IGBT part:

–2

10

Per unit base =

7

R

5

NORMALIZED TRANSIENT

2

10

E

(A)

FWDi part:

3

Per unit base =

2

R

THERMAL IMPEDANCE Z

–3

10

–2

23 57 23 57 23 57 23 57

10

th(j–c)

= 0.29°C/W

th(j–c)

= 0.51°C/W

10

10

–1

–5

TIME (s)

0

10

Single Pulse,

C

= 25°C

T
Under the chip

–4

23 57 23 57

10

SWITCHING LOSS vs.

COLLECTOR CURRENT

(TYPICAL)

1

10

Conditions:

7

CC

= 300V

V

5

GE

= ±15V

V

G

= 8.3Ω

R

3

j

= 125°C

T

2

Inductive load
C snubber at bus

0

10

7
5

3
2

SWITCHING LOSS (mJ/pulse)

–1

10

10

Esw(off)

Esw(on)

0

57

10

1

COLLECTOR CURRENT I

RECOVERY LOSS vs. I

(TYPICAL)

0

10

7
5

3
2

Err

SWITCHING LOSS vs.

GATE RESISTANCE

(TYPICAL)

2

10

Conditions:

7

CC

= 300V

V

5

GE

= ±15V

V

C

= 75A

I

3

j

= 125°C

T

2

Inductive load
C snubber at bus

2

23 5723

10

C

(A)

1

10

7
5

3
2

SWITCHING LOSS (mJ/pulse)

0

10

10

Esw(off)

Esw(on)

0

57

10

GATE RESISTANCE R

1

23 5723

G

(Ω)

10

2

RECOVERY LOSS vs.

E

0

10

7
5

3
2

GATE RESISTANCE

(TYPICAL)

Err

–1

10

Conditions:

7

CC

= 300V

V

5

GE

= ±15V

V
R

G

= 8.3Ω

3

j

= 125°C

T

2

RECOVERY LOSS (mJ/pulse)

Inductive load
C snubber at bus

–2

10

0

10

57

10

EMITTER CURRENT I

1

23 5723

E

(A)

10

2

–1

10

Conditions:

7

CC

= 300V

V

5

GE

= ±15V

V
I

E

= 75A

3

j

= 125°C

T

2

RECOVERY LOSS (mJ/pulse)

Inductive load
C snubber at bus

–2

10

0

10

57

10

GATE RESISTANCE R

1

23 5723

G

(Ω)

10

2

Jun. 2004

GATE CHARGE

CHARACTERISTICS

20

IC = 75A

(V)

GE

16

12

8

4

GATE-EMITTER VOLTAGE V

0

0 100 200 300 400 500

0

(TYPICAL)

VCC = 200V

GATE CHARGE QG (nC)

MITSUBISHI IGBT MODULES

CM75TL-12NF

HIGH POWER SWITCHING USE

VCC = 300V

Jun. 2004