MITSUBISHI CM75DY-34A User Manual

CM75DY-34A

MITSUBISHI IGBT MODULES

CM75DY-34A

HIGH POWER SWITCHING USE

¡IC ..................................................................... 75A

¡V

CES ......................................................... 1700V

¡Insulated Type
¡2-elements in a pack

APPLICATION

General purpose inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

94

232317

17

2-φ6.5 MOUNTING HOLES

C2E1

13

48

12 12 12

16 7 16 7 16

–0.5

+1

29

E2

80

LABEL

±0.25

C1

E2 G2

E1G1

4184

3-M5 NUTS

TAB #110. t=0.5

21.2 7.5

C2E1

20

(14)

12.5

(SCREWING DEPTH)

E2

CIRCUIT DIAGRAM

4

E2 G2G1 E1

C1

Jun. 2007

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

Symbol Parameter

V

CES

VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

—

Torque strength

—

Weight

—

G-E Short
C-E Short
DC, T

C = 111°C

Pulse (Note 2)
Operation (Note 2)
Pulse (Note 2)

C = 25°C

*1

T

Main terminal to base plate, AC 1 min.
Main terminal M5
Mounting holes M6
Typical value

Conditions UnitRatings

*1

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol

ICES

V

GE(th)

IGES

VCE(sat)

Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q

th(j-c)R

R

th(c-f)

R
RG

1 : Tc, Tf measured point is just under the chips.

*

2 : Typical value is measured by using Shin-Etsu Chemical Co.,Ltd “G-746”.

*

Note 1. I

Collector cutoff current
Gate-emitter threshold
voltage
Gate leakage current
Collector to emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance

Contact thermal resistance

External gate resistance

E, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temperature (T

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Parameter

VCE = VCES, VGE = 0V

I

C = 7.5mA, VCE = 10V

±V
T

j = 25°C

T

j = 125°C

CE = 10V

V
V

GE = 0V

CC = 1000V, IC = 75A, VGE = 15V

V

V

CC = 1000V, IC = 75A

V

GE1 = VGE2 = 15V

R

G = 6.4Ω, Inductive load switching operation

I

E = 75A

E = 75A, VGE = 0V

I
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound applied (1/2 module)

j) should not increase beyond 150°C.

GE = VGES, VCE = 0V

Test conditions

I

C = 75A, VGE = 15V

*1

*1

j) does not exceed Tjmax rating.

MITSUBISHI IGBT MODULES

CM75DY-34A

HIGH POWER SWITCHING USE

1700

±20

(Note 2)

*1,*2

Min. Max.

—

5.5 8.5

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

6.4

75

150

75
150
780

–40 ~ +150
–40 ~ +125

3500

2.5 ~ 3.5

3.5 ~ 4.5
310

Limits

Typ.

—

1

7.0 V

—

2.2

2.45
—
—
—

500

—
—
—
—
—

7.5
—
—
—

0.022
—

2.0

2.8
—

18.5

2.1

0.4
—

200
150
550
350
300

—

3.0

0.16

0.29

—
64

V
V

A

A

W

°C
°C

V

N • m

g

Unit

mA

µA

V

nF

nC

ns

µC

V

°C/W

Ω

Jun. 2007

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