CM75DY-34A
MITSUBISHI IGBT MODULES
CM75DY-34A
HIGH POWER SWITCHING USE
¡IC ..................................................................... 75A
¡V
CES ......................................................... 1700V
¡Insulated Type
¡2-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
94
232317
17
2-φ6.5 MOUNTING HOLES
C2E1
13
48
12 12 12
16 7 16 7 16
–0.5
+1
29
E2
80
LABEL
±0.25
C1
E2 G2
E1G1
4184
3-M5 NUTS
TAB #110. t=0.5
21.2 7.5
C2E1
20
(14)
12.5
(SCREWING DEPTH)
E2
CIRCUIT DIAGRAM
4
E2 G2G1 E1
C1
Jun. 2007
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
Symbol Parameter
V
CES
VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso
Collector-emitter voltage
Gate-emitter voltage
Collector current
Note 1
)
Emitter current
Note 1
)
Maximum collector dissipation
Note 3
)
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
—
Weight
—
G-E Short
C-E Short
DC, T
C = 111°C
Pulse (Note 2)
Operation (Note 2)
Pulse (Note 2)
C = 25°C
*1
T
Main terminal to base plate, AC 1 min.
Main terminal M5
Mounting holes M6
Typical value
Conditions UnitRatings
*1
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
ICES
V
GE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q
th(j-c)R
R
th(c-f)
R
RG
1 : Tc, Tf measured point is just under the chips.
*
2 : Typical value is measured by using Shin-Etsu Chemical Co.,Ltd “G-746”.
*
Note 1. I
Collector cutoff current
Gate-emitter threshold
voltage
Gate leakage current
Collector to emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Note 1
)
Reverse recovery charge
Note 1
)
Emitter-collector voltage
Note 1
)
Thermal resistance
Contact thermal resistance
External gate resistance
E, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (T
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Parameter
VCE = VCES, VGE = 0V
I
C = 7.5mA, VCE = 10V
±V
T
j = 25°C
T
j = 125°C
CE = 10V
V
V
GE = 0V
CC = 1000V, IC = 75A, VGE = 15V
V
V
CC = 1000V, IC = 75A
V
GE1 = VGE2 = 15V
R
G = 6.4Ω, Inductive load switching operation
I
E = 75A
E = 75A, VGE = 0V
I
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound applied (1/2 module)
j) should not increase beyond 150°C.
GE = VGES, VCE = 0V
Test conditions
I
C = 75A, VGE = 15V
*1
*1
j) does not exceed Tjmax rating.
MITSUBISHI IGBT MODULES
CM75DY-34A
HIGH POWER SWITCHING USE
1700
±20
(Note 2)
*1,*2
Min. Max.
—
5.5 8.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.4
75
150
75
150
780
–40 ~ +150
–40 ~ +125
3500
2.5 ~ 3.5
3.5 ~ 4.5
310
Limits
Typ.
—
1
7.0 V
—
2.2
2.45
—
—
—
500
—
—
—
—
—
7.5
—
—
—
0.022
—
2.0
2.8
—
18.5
2.1
0.4
—
200
150
550
350
300
—
3.0
0.16
0.29
—
64
V
V
A
A
W
°C
°C
V
N • m
g
Unit
mA
µA
V
nF
nC
ns
µC
V
°C/W
Ω
Jun. 2007
2
PERFORMANCE CURVES
MITSUBISHI IGBT MODULES
CM75DY-34A
HIGH POWER SWITCHING USE
OUTPUT CHARACTERISTICS
150
(A)
C
Tj = 25°C
V
GE
20V
=
15
13
12
100
11
50
COLLECTOR CURRENT I
0
046810
2
COLLECTOR-EMITTER VOLTAGE V
10
9
8
CE
(V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
5
V
GE
(V)
CE (sat)
= 15V
4
3
2
TRANSFER CHARACTERISTICS
150
V
CE
)
A
(
C
= 10V
100
50
COLLECTOR CURRENT I
0
0481216 20
GATE-EMITTER VOLTAGE VGE (V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
10
(V)
8
CE (sat)
6
4
Tj = 25°C
T
j
= 125°C
Tj = 25°C
IC = 150A
IC = 75A
)
COLLECTOR-EMITTER
1
SATURATION VOLTAGE V
0
0 50 100 150
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
7
5
3
(A)
2
E
2
10
7
5
3
2
1
10
7
5
EMITTER CURRENT I
3
2
0
10
0.5 1 1.5 2 2.5 3 3.5 4
Tj = 25°C
j
= 125°C
T
EMITTER-COLLECTOR VOLTAGE V
Tj = 25°C
T
j
= 125°C
EC
(V)
COLLECTOR-EMITTER
2
SATURATION VOLTAGE V
0
0
4 8 12 16 20
GATE-EMITTER VOLTAGE V
CAPACITANCE–V
2
10
7
5
(nF)
3
2
res
1
10
, C
7
5
oes
3
, C
2
ies
0
10
7
5
3
2
–1
10
7
5
3
2
CAPACITANCE C
–2
10
10
CHARACTERISTICS
V
GE
= 0V
–1
2
357 2
10
0
COLLECTOR-EMITTER VOLTAGE V
IC = 30A
CE
1
10
357 2
GE
(V)
C
ies
C
oes
C
res
357
CE
10
2
(V)
Jun. 2007
3
MITSUBISHI IGBT MODULES
CM75DY-34A
HIGH POWER SWITCHING USE
SWITCHING CHARACTERISTICS
HALF-BRIDGE
SWITCHING TIME vs. COLLECTOR CURRENT
3
10
7
(ns)
5
f
, t
3
2
d(off)
, t
2
r
10
, t
7
5
d(on)
3
2
Conditions:
1
10
CC
= 1000V
V
7
V
GE
= ±15V
5
G
= 6.4Ω
R
3
j
= 125°C
T
2
Inductive load
SWITCHING TIME t
0
10
0
10
t
d(off)
t
d(on)
57
t
f
t
r
1
10
23 5723
COLLECTOR CURRENT IC (A)
SWITCHING LOSS vs.
COLLECTOR CURRENT
2
10
Conditions:
7
CC
= 1000V
V
5
V
GE
(mJ/pulse)
rr
, E
off
, E
on
SWITCHING LOSS E
G
R
3
j
= 125°C
T
2
Inductive load
1
10
7
5
3
2
0
10
0
10
= ±15V
= 6.4Ω
E
rr
E
off
E
on
57
10
1
23 5723
10
10
SWITCHING CHARACTERISTICS
HALF-BRIDGE
SWITCHING TIME vs. GATE RESISTANCE
3
10
7
(ns)
f
5
, t
d(off)
3
, t
r
2
, t
d(on)
2
10
7
5
3
2
SWITCHING TIME t
1
10
2
10
0
t
d(off)
t
d(on)
t
f
t
r
57
10
1
Conditions:
CC
= 1000V
V
V
GE
= ±15V
C
= 75A
I
j
= 125°C
T
Inductive load
23 5723
10
2
GATE RESISTANCE RG (Ω)
SWITCHING LOSS vs.
GATE RESISTANCE
3
10
Conditions:
7
CC
= 1000V
V
5
GE
= ±15V
(mJ/pulse)
rr
, E
off
, E
on
2
SWITCHING LOSS E
V
I
3
T
2
Inductive load
2
10
7
5
3
2
1
10
0
10
C
= 75A
j
= 125°C
E
E
E
rr
off
on
57
10
1
23 5723
10
2
COLLECTOR CURRENT I
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
3
10
(A)
Conditions:
rr
7
(ns)
rr
REVERSE RECOVERY TIME t
REVERSE RECOVERY CURRENT l
V
5
V
R
3
T
2
Inductive load
2
10
7
5
3
2
1
10
0
10
CC
= 1000V
GE
= ±15V
G
= 6.4Ω
j
= 25°C
23 57
I
rr
t
rr
1
10
23 57
EMITTER CURRENT I
C
(A)
GATE RESISTANCE R
G
(Ω)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
0
10
7
5
(ratio)
3
2
th (j–c)
–1
10
7
5
3
2
–2
10
7
IGBT part:
5
NORMALIZED TRANSIENT
2
10
C
(A)
Per unit base = R
3
FWDi part:
2
Per unit base = R
THERMAL IMPEDANCE Z
–3
10
–5
–4
23 57
23 57
10
10
Single Pulse
Tc= 25°C
Tc measured point is
just under the chips
th(j–c)
= 0.16°C/W
th(j–c)
= 0.29°C/W
–3
–2
23 57
10
23 57
10
TIME (s)
10
–1
23 57
10
0
23 57
10
1
Jun. 2007
4
20
16
MITSUBISHI IGBT MODULES
CM75DY-34A
HIGH POWER SWITCHING USE
GATE CHARGE
CHARACTERISTICS
IC = 75A
VCC = 800V
12
8
4
GATE-EMITTER VOLTAGE VGE (V)
0
0 400200 800600
GATE CHARGE QG (nC)
VCC = 1000V
Jun. 2007
5
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