MITSUBISHI CM600HG-130H User Guide

MITSUBISHI HVIGBT MODULES

CM600HG-130H

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE

CM600HG-130H

● IC ..................................................................600 A

● V

CES ...................................................... 6500 V

● High Insulated Type

● 1-element in a Pack

● AISiC Baseplate

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

INSULATED TYPE

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

190

3-M4 NUTS

screwing depth min. 7.7

±0.5

57

±0.25

57

±0.25

64 2

53

E

GC

14

±0.3

61.2

±0.5

59.2

12

±0.3

±0.5

61.2

57

±0.5

±0.25

5-M8 NUTS

±0.1

17

±0.25

±0.3

44

1

8-φ7 MOUNTING HOLES

124

±0.1

9

screwing depth min. 16.5

+1.0

0

±0.15

48

5

±0.5

140

+1.0

(6)

C

(4)

(2)

C

G E

E

(5)

CIRCUIT DIAGRAM

18

±0.3

41

±0.5

E

(3)

22

±0.3

E

(1)

LABEL

0

38

±0.3

40.4

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

May 2009

1

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS

Symbol Item Conditions

j

= –40°C

T

V

V I

C

I

CM

I

E

IEM P V V T T T t

psc

CES

GES

c

iso

e

j

op

stg

Collector-emitter voltage

Gate-emitter voltage

Collector current

Emitter current (Note 2)

Maximum power dissipation

(Note 3) Isolation voltage Par tial discharge extinction voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width

VGE = 0V

CE

= 0V, Tj = 25°C

V DC, T

c

= 80°C

T

j

= +25°C

T

j

= +125°C

Pulse (Note 1) DC Pulse (Note 1) T

c

= 25°C, IGBT part

RMS, sinusoidal, f = 60Hz, t = 1 min. RMS, sinusoidal, f = 60Hz, Q

CC

= 4500V, VCE ≤ V

V

PD

≤ 10 pC

CES

, VGE = 15V, Tj = 125°C

MITSUBISHI HVIGBT MODULES

CM600HG-130H

HIGH POWER SWITCHING USE

INSULATED TYPE

Ratings Unit

5800 6300 6500

± 20

600

1200

600 1200 8900

10200

5100

–40 ~ +150 –40 ~ +125 –40 ~ +125

10

V

V A A A A

W

V V

°C °C °C µs

ELECTRICAL CHARACTERISTICS

Symbol Item Conditions

I

CES

V

GE(th)

I

GES

C

ies

C

oes

C

res

Q

g

V

CE(sat)

t

d(on)

t

r

E

on(10%)

t

d(off)

t

f

t

f2

E

off(10%)

V

EC

t

rr

t

rr2

Q

rr

E

rec(10%)

Collector cutoff current

Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Tu r n-on delay time Tu r n-on rise time Tu r n-on switching energy

(Note 5) Tu r n-off delay time Tu r n-off fall time Tu r n-off fall time Tu r n-off switching energy

(Note 5) Emitter-collector voltage

(Note 2) Reverse recovery time

(Note 2) Reverse recovery charge

(Note 2) Reverse recovery energy

(Note 2), (Note 5)

V

CE

= V

CES

, VGE = 0V

V

CE

= 10 V, IC = 60 mA, Tj = 25°C

V

GE

= V

GES

, VCE = 0V, Tj = 25°C

CE

= 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C

V

CC

= 3600 V, IC = 600 A, VGE = ±15 V, Tj = 25°C

I

C

= 600 A (Note 4)

V

GE

= 15 V

V

CC

= 3600 V, IC = 600 A, VGE = ±15 V

R

G(on)

= 10 Ω, Tj = 125°C, Ls = 150 nH

t

(IGBT_off)

CC

= 3600 V, IC = 600 A, VGE = ±15 V

V R

G(off)

= 33 Ω, Tj = 125°C, Ls = 150 nH

= 60 µs

(Note 6)

, Inductive load

Inductive load

I

E

= 600 A (Note 4)

V

GE

= 0 V

CC

= 3600 V, IE = 600 A, VGE = ±15 V

V R

G(on)

= 10 Ω, Tj = 125°C, Ls = 150 nH

t

(IGBT_off)

= 60 µs

(Note 6)

, Inductive load

j

= 25°C

T T

j

= 125°C

Tj = 25°C T

j

= 125°C

Tj = 25°C T

j

= 125°C

— —

5.0

–0.5

— — — — — — — —

—

— —

—

— —

—

Limits

Ty p

— 30

6.0 —

124

7.6

2.2

9.9

4.50

4.60

1.20

0.35

4.50

8.20

0.50

3.10

4.30

4.00

3.60

1.00

2.40

1100

2.00

MaxMin

10 90

7.0

0.5 — — — — — — — —

—

— — —

—

— —

—

Unit

mA

V

µA nF nF nF µC

V

µs µs

J/P

µs µs µs

J/P

V

µs

µC

J/P

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

May 2009

2

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

THERMAL CHARACTERISTICS

Symbol Item Conditions

R

th(j-c)Q

R

th(j-c)R

R

th(c-f)

MECHANICAL CHARACTERISTICS

Symbol Item Conditions

M

t

M

s

M

t

m CTI d

a

d

s

L

P CE

R

CC’+EE’

Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed T

Thermal resistance Thermal resistance Contact thermal resistance

Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λ

grease

= 1W/m·K, D(c-f) = 100 µm

M8: Main terminals screw

Mounting torque

M6: Mounting screw

M4: Auxiliary terminals screw Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance

2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

3. Junction temperature (Tj) should not exceed T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

5. E

on(10%)

/ E

off(10%)

/ E

rec(10%)

6. t

(IGBT_off)

definition is shown as follows.

are the integral of

T

c

= 25°C

jmax

rating (150°C).

0.1VCE x 0.1IC x dt.

opmax

MITSUBISHI HVIGBT MODULES

CM600HG-130H

HIGH POWER SWITCHING USE

INSULATED TYPE

Limits

rating (125°C).

— — —

7.0

3.0

1.0 —

600

26 56 — —

Ty p

— —

6.0

Limits

Ty p

— — —

1.35 — — — 17

0.14

MaxMin

14.0

22.0 —

MaxMin

15.0

6.0

3.0 — — — — — —

Unit

K/kW K/kW K/kW

Unit

N·m N·m N·m

kg

— mm mm

nH mΩ

Ic

time

t(IGBT_off)

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

May 2009

3

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

90%V

di

10%V

td(off) tf2

0

10%V

V

GE

90%I

C

10%V

10%I

C

td(on)

tr

ton

t1 t2 t3 t4

CE

Eon = ic·vce dt

∫

GE

V

CC

I

C

V

CE

t2

t1

MITSUBISHI HVIGBT MODULES

CM600HG-130H

HIGH POWER SWITCHING USE

INSULATED TYPE

GE

90%I

C

50%I

C

10%I

CE

dt

C

t4

Eoff = ic·vce dt

∫

t3

tf = (0.9ic–0.1ic)/(di/dt) toff = td(off)+tf

Fig. 1 – Definitions of switching times & energies of IGBT part

IE(IF)

di/dt

0

di

Irr

trr

dt

10%V

EC

trr2

t5 t60

10%I

VEC(VR)

E

Qrr = – ie dt

Erec = – ie·vec dt

Fig. 2 – Definitions of reverse recovery charge & energy of FWDi part

t6

∫

0

t6

∫

t5

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

May 2009

4

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

PERFORMANCE CURVES

MITSUBISHI HVIGBT MODULES

CM600HG-130H

HIGH POWER SWITCHING USE

INSULATED TYPE

OUTPUT CHARACTERISTICS

1200

Tj = 125°C

1000

)

A

(

800

600

400

COLLECTOR CURRENT

200

0

0246

COLLECTOR-EMITTER VOLTAGE (V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

1200

V

GE

= 15V

(

TYPICAL

V

GE

= 20V

V

GE

= 15V

V

GE

= 12V

(

TYPICAL

)

TRANSFER CHARACTERISTICS

1200

V

CE

= 20V

1000

)

A

(

V

GE

= 10V

V

GE

= 8V

8

)

800

600

400

COLLECTOR CURRENT

200

Tj = 25°C

j

= 125°C

T

0

GATE-EMITTER VOLTAGE (V

FORWARD CHARACTERISTICS

1200

(

TYPICAL

FREE-WHEEL DIODE

(

TYPICAL

)

6 8420 10 12

)

1000

)

A

(

800

600

400

COLLECTOR CURRENT

200

Tj = 25°C

j

= 125°C

0

02468

COLLECTOR-EMITTER SATURATION VOLTAGE (V

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

T

1000

)

A

(

800

600

400

EMITTER CURRENT

200

Tj = 25°C

j

= 125°C

0

02468

)

EMITTER-COLLECTOR VOLTAGE (V

T

)

May 2009

5

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM600HG-130H

HIGH POWER SWITCHING USE

INSULATED TYPE

CAPACITANCE CHARACTERISTICS

3

10

7 5

3 2

2

10

7

)

5

nF

(

3 2

1

10

7 5

3

CAPACITANCE

2

0

10

7 5

3

V

GE

2

f = 100kHz

-1

10

-1

23 57

10

COLLECTOR-EMITTER VOLTAGE (V

HALF-BRIDGE SWITCHING ENERGY

10

V

CC

R

G(on)

Tj = 125°C, Inductive load

8

)

J/P

(

6

(

= 0V, Tj = 25°C

0

10

CHARACTERISTICS

(

= 3600V, V

= 10Ω, R

GE

G(off)

TYPICAL

)

C

ies

C

oes

C

res

23 57 23 57

10

1

)

TYPICAL

)

= ±15V

= 33Ω

E

on

E

off

10

GATE CHARGE CHARACTERISTICS

(

TYPICAL

)

20

V

CE

= 3600V, IC = 600A

Tj = 25°C

15

)

V

(

10

5

0

-5

GATE-EMITTER VOLTAGE

-10

2

-15

GATE CHARGE (µC

151050

)

HALF-BRIDGE SWITCHING ENERGY

CHARACTERISTICS

(

TYPICAL

)

12

V

CC

= 3600V, IC = 600A

V

GE

= ±15V, Tj = 125°C

Inductive load

10

)

J/P

(

8

E

on

4

SWITCHING ENERGIES

2

0

0 500 1000 1500

COLLECTOR CURRENT (A

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

E

rec

)

6

4

SWITCHING ENERGIES

2

0

6

E

off

E

rec

0204060

GATE RESISTOR (Ω

)

May 2009

80

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MITSUBISHI HVIGBT MODULES

CM600HG-130H

HIGH POWER SWITCHING USE

INSULATED TYPE

HALF-BRIDGE SWITCHING TIME

2

10

V

CC

= 3600V, V

7

R

G(on)

5

3

2

= 10Ω, R

T

j

= 125°C, Inductive load

)

µs

1

10

(

7 5

3

2

0

10

SWITCHING TIMES

7 5

3

2

-1

10

t

f

t

r

1

423 57

COLLECTOR CURRENT (A

CHARACTERISTICS

10

2

(

TYPICAL

GE

G(off)

= ±15V

= 33Ω

)

423 57

10

FREE-WHEEL DIODE REVERSE RECOVERY

CHARACTERISTICS

(

2

10

V

CC

= 3600V, V

7

R

G(on)

5

3

)

2

µs

(

1

t

d(off)

t

d(on)

3

423 57

10

4

10

7 5

3

2

0

10

7 5

REVERSE RECOVERY TIME

3

2

-1

10

= 10Ω, R

T

j

= 125°C, Inductive load

1

423 57

)

TYPICAL

GE

G(off)

2

10

EMITTER CURRENT (A

= ±15V

= 33Ω

423 57

)

4

10

7 5

)

A

3

(

10

l

rr

t

rr

3

423 57

10

2

3

10

7 5

3

2

10

7 5

REVERSE RECOVERY CURRENT

3

2

1

10

4

)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTICS

1.2 R

th(j–c)Q

= 14K/kW

R

th(j–c)R

= 22K/kW

1.0

0.8

0.6

0.4

0.2

NORMALIZED TRANSIENT THERMAL IMPEDANCE

0

10

-3

23 57

10

-2

23 57

TIME (s

10

-1

23 57

)

10

0

23 57

10



n

=

th( j –c )

Ri [K/kW]

[sec]

τ

i

( t )

ZR

1

Σ

i=1

0.0059

0.0002

1

1–exp

i

2

0.0978

0.0074





t

–





t

i

3

0.6571

0.0732

4

0.2392

0.4488

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

May 2009

7

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

REVERSE BIAS SAFE OPERATING AREA

1500

V

CC

≤ 4500V, V

Tj = 125°C, R

G(off)

(

RBSOA

GE

≥ 33Ω

= ±15V

)

15000

V

CC

Tj = 125°C, R

MITSUBISHI HVIGBT MODULES

CM600HG-130H

HIGH POWER SWITCHING USE

INSULATED TYPE

SHORT CIRCUIT

SAFE OPERATING AREA

(SCSOA)

≤ 4500V, V

GE

G(off)

= ±15V

≥ 33Ω

)

A

(

1000

500

COLLECTOR CURRENT

0

COLLECTOR-EMITTER VOLTAGE (V

FREE-WHEEL DIODE REVERSE RECOVERY

1500

)

A

(

SAFE OPERATING AREA

(

RRSOA

V

CC

≤ 4500V, di/dt ≤ 3000A/µs

Tj = 125°C

)

A

(

10000

5000

COLLECTOR CURRENT

0

)

2000 40000 6000 80002000 4000 6000 8000

COLLECTOR-EMITTER VOLTAGE (V

)

1000

500

REVERSE RECOVERY CURRENT

0

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

2000 40000 6000 8000

COLLECTOR-EMITTER VOLTAGE (V

)

May 2009

8