MITSUBISHI CM600HG-130H User Guide

MITSUBISHI HVIGBT MODULES

CM600HG-130H

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

HIGH POWER SWITCHING USE

CM600HG-130H

● IC ..................................................................600 A

● V

CES ...................................................... 6500 V

● High Insulated Type

● 1-element in a Pack

● AISiC Baseplate

APPLICATION

Traction drives, High Reliability Converters / Inverters, DC choppers

INSULATED TYPE

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

190

3-M4 NUTS

screwing depth min. 7.7

±0.5

57

±0.25

57

±0.25

64 2

53

E

GC

14

±0.3

61.2

±0.5

59.2

12

±0.3

±0.5

61.2

57

±0.5

±0.25

5-M8 NUTS

±0.1

17

±0.25

±0.3

44

1

8-φ7 MOUNTING HOLES

124

±0.1

9

screwing depth min. 16.5

+1.0

0

±0.15

48

5

±0.5

140

+1.0

(6)

C

(4)

(2)

C

G E

E

(5)

CIRCUIT DIAGRAM

18

±0.3

41

±0.5

E

(3)

22

±0.3

E

(1)

LABEL

0

38

±0.3

40.4

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

May 2009

1

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS

Symbol Item Conditions

j

= –40°C

T

V

V I

C

I

CM

I

E

IEM P V V T T T t

psc

CES

GES

c

iso

e

j

op

stg

Collector-emitter voltage

Gate-emitter voltage

Collector current

Emitter current (Note 2)

Maximum power dissipation

(Note 3) Isolation voltage Par tial discharge extinction voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width

VGE = 0V

CE

= 0V, Tj = 25°C

V DC, T

c

= 80°C

T

j

= +25°C

T

j

= +125°C

Pulse (Note 1) DC Pulse (Note 1) T

c

= 25°C, IGBT part

RMS, sinusoidal, f = 60Hz, t = 1 min. RMS, sinusoidal, f = 60Hz, Q

CC

= 4500V, VCE ≤ V

V

PD

≤ 10 pC

CES

, VGE = 15V, Tj = 125°C

MITSUBISHI HVIGBT MODULES

CM600HG-130H

HIGH POWER SWITCHING USE

INSULATED TYPE

Ratings Unit

5800 6300 6500

± 20

600

1200

600 1200 8900

10200

5100

–40 ~ +150 –40 ~ +125 –40 ~ +125

10

V

V A A A A

W

V V

°C °C °C µs

ELECTRICAL CHARACTERISTICS

Symbol Item Conditions

I

CES

V

GE(th)

I

GES

C

ies

C

oes

C

res

Q

g

V

CE(sat)

t

d(on)

t

r

E

on(10%)

t

d(off)

t

f

t

f2

E

off(10%)

V

EC

t

rr

t

rr2

Q

rr

E

rec(10%)

Collector cutoff current

Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Tu r n-on delay time Tu r n-on rise time Tu r n-on switching energy

(Note 5) Tu r n-off delay time Tu r n-off fall time Tu r n-off fall time Tu r n-off switching energy

(Note 5) Emitter-collector voltage

(Note 2) Reverse recovery time

(Note 2) Reverse recovery charge

(Note 2) Reverse recovery energy

(Note 2), (Note 5)

V

CE

= V

CES

, VGE = 0V

V

CE

= 10 V, IC = 60 mA, Tj = 25°C

V

GE

= V

GES

, VCE = 0V, Tj = 25°C

CE

= 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C

V

CC

= 3600 V, IC = 600 A, VGE = ±15 V, Tj = 25°C

I

C

= 600 A (Note 4)

V

GE

= 15 V

V

CC

= 3600 V, IC = 600 A, VGE = ±15 V

R

G(on)

= 10 Ω, Tj = 125°C, Ls = 150 nH

t

(IGBT_off)

CC

= 3600 V, IC = 600 A, VGE = ±15 V

V R

G(off)

= 33 Ω, Tj = 125°C, Ls = 150 nH

= 60 µs

(Note 6)

, Inductive load

Inductive load

I

E

= 600 A (Note 4)

V

GE

= 0 V

CC

= 3600 V, IE = 600 A, VGE = ±15 V

V R

G(on)

= 10 Ω, Tj = 125°C, Ls = 150 nH

t

(IGBT_off)

= 60 µs

(Note 6)

, Inductive load

j

= 25°C

T T

j

= 125°C

Tj = 25°C T

j

= 125°C

Tj = 25°C T

j

= 125°C

— —

5.0

–0.5

— — — — — — — —

—

— —

—

— —

—

Limits

Ty p

— 30

6.0 —

124

7.6

2.2

9.9

4.50

4.60

1.20

0.35

4.50

8.20

0.50

3.10

4.30

4.00

3.60

1.00

2.40

1100

2.00

MaxMin

10 90

7.0

0.5 — — — — — — — —

—

— — —

—

— —

—

Unit

mA

V

µA nF nF nF µC

V

µs µs

J/P

µs µs µs

J/P

V

µs

µC

J/P

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

May 2009

2

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

THERMAL CHARACTERISTICS

Symbol Item Conditions

R

th(j-c)Q

R

th(j-c)R

R

th(c-f)

MECHANICAL CHARACTERISTICS

Symbol Item Conditions

M

t

M

s

M

t

m CTI d

a

d

s

L

P CE

R

CC’+EE’

Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed T

Thermal resistance Thermal resistance Contact thermal resistance

Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λ

grease

= 1W/m·K, D(c-f) = 100 µm

M8: Main terminals screw

Mounting torque

M6: Mounting screw

M4: Auxiliary terminals screw Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance

2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

3. Junction temperature (Tj) should not exceed T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

5. E

on(10%)

/ E

off(10%)

/ E

rec(10%)

6. t

(IGBT_off)

definition is shown as follows.

are the integral of

T

c

= 25°C

jmax

rating (150°C).

0.1VCE x 0.1IC x dt.

opmax

MITSUBISHI HVIGBT MODULES

CM600HG-130H

HIGH POWER SWITCHING USE

INSULATED TYPE

Limits

rating (125°C).

— — —

7.0

3.0

1.0 —

600

26 56 — —

Ty p

— —

6.0

Limits

Ty p

— — —

1.35 — — — 17

0.14

MaxMin

14.0

22.0 —

MaxMin

15.0

6.0

3.0 — — — — — —

Unit

K/kW K/kW K/kW

Unit

N·m N·m N·m

kg

— mm mm

nH mΩ

Ic

time

t(IGBT_off)

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

May 2009

3