3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
CM600HG-130H
● IC ..................................................................600 A
● V
CES ...................................................... 6500 V
● High Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULATED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAMDimensions in mm
190
3-M4 NUTS
screwing depth
min. 7.7
±0.5
57
±0.25
57
±0.25
64 2
53
E
GC
14
±0.3
61.2
±0.5
59.2
12
±0.3
±0.5
61.2
57
±0.5
±0.25
5-M8 NUTS
±0.1
17
±0.25
±0.3
44
1
8-φ7 MOUNTING HOLES
124
±0.1
9
screwing depth
min. 16.5
+1.0
0
±0.15
48
5
±0.5
140
+1.0
(6)
C
(4)
(2)
C
C
C
G
E
E
(5)
CIRCUIT DIAGRAM
18
±0.3
41
±0.5
E
(3)
22
±0.3
E
(1)
LABEL
0
38
±0.3
40.4
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
1
Page 2
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
SymbolItemConditions
j
= –40°C
T
V
V
I
C
I
CM
I
E
IEM
P
V
V
T
T
T
t
psc
CES
GES
c
iso
e
j
op
stg
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current(Note 2)
Maximum power dissipation
(Note 3)
Isolation voltage
Par tial discharge extinction voltage
Junction temperature
Operating temperature
Storage temperature
Maximum short circuit pulse width
VGE = 0V
CE
= 0V, Tj = 25°C
V
DC, T
c
= 80°C
T
j
= +25°C
T
j
= +125°C
Pulse(Note 1)
DC
Pulse(Note 1)
T
c
= 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, Q
CC
= 4500V, VCE ≤ V
V
PD
≤ 10 pC
CES
, VGE = 15V, Tj = 125°C
MITSUBISHI HVIGBT MODULES
CM600HG-130H
HIGH POWER SWITCHING USE
INSULATED TYPE
RatingsUnit
5800
6300
6500
± 20
600
1200
600
1200
8900
10200
5100
–40 ~ +150
–40 ~ +125
–40 ~ +125
10
V
V
A
A
A
A
W
V
V
°C
°C
°C
µs
ELECTRICAL CHARACTERISTICS
SymbolItemConditions
I
CES
V
GE(th)
I
GES
C
ies
C
oes
C
res
Q
g
V
CE(sat)
t
d(on)
t
r
E
on(10%)
t
d(off)
t
f
t
f2
E
off(10%)
V
EC
t
rr
t
rr2
Q
rr
E
rec(10%)
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation
voltage
Tu r n-on delay time
Tu r n-on rise time
Tu r n-on switching energy
(Note 5)
Tu r n-off delay time
Tu r n-off fall time
Tu r n-off fall time
Tu r n-off switching energy
(Note 5)
Emitter-collector voltage
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
(Note 2), (Note 5)
V
CE
= V
CES
, VGE = 0V
V
CE
= 10 V, IC = 60 mA, Tj = 25°C
V
GE
= V
GES
, VCE = 0V, Tj = 25°C
CE
= 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C
V
V
CC
= 3600 V, IC = 600 A, VGE = ±15 V, Tj = 25°C
I
C
= 600 A(Note 4)
V
GE
= 15 V
V
CC
= 3600 V, IC = 600 A, VGE = ±15 V
R
G(on)
= 10 Ω, Tj = 125°C, Ls = 150 nH
t
(IGBT_off)
CC
= 3600 V, IC = 600 A, VGE = ±15 V
V
R
G(off)
= 33 Ω, Tj = 125°C, Ls = 150 nH
= 60 µs
(Note 6)
, Inductive load
Inductive load
I
E
= 600 A(Note 4)
V
GE
= 0 V
CC
= 3600 V, IE = 600 A, VGE = ±15 V
V
R
G(on)
= 10 Ω, Tj = 125°C, Ls = 150 nH
t
(IGBT_off)
= 60 µs
(Note 6)
, Inductive load
j
= 25°C
T
T
j
= 125°C
Tj = 25°C
T
j
= 125°C
Tj = 25°C
T
j
= 125°C
—
—
5.0
–0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Ty p
—
30
6.0
—
124
7.6
2.2
9.9
4.50
4.60
1.20
0.35
4.50
8.20
0.50
3.10
4.30
4.00
3.60
1.00
2.40
1100
2.00
MaxMin
10
90
7.0
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
mA
V
µA
nF
nF
nF
µC
V
µs
µs
J/P
µs
µs
µs
J/P
V
µs
µs
µC
J/P
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
May 2009
2
Page 3
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
THERMAL CHARACTERISTICS
SymbolItemConditions
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
MECHANICAL CHARACTERISTICS
SymbolItemConditions
M
t
M
s
M
t
m
CTI
d
a
d
s
L
P CE
R
CC’+EE’
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed T