MITSUBISHI CM600E2Y-34H User Guide
MITSUBISHI HVIGBT MODULES
CM600E2Y-34H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CM600E2Y-34H
● IC...................................................................600A
● V
● Insulated T ype
● 1-elements in a pack (for brake)
APPLICATION
DC choppers, Dynamic braking choppers.
HIGH POWER SWITCHING USE
INSULATED TYPE
CES ....................................................... 1700V
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
130
3 - M4 NUTS
CM
E1
G1
E1
57
C1
±0.25
53
11.85
114
57
±0.25
C2
E2
C1
40
C2
16
55.2
E2
G2
4 - M8 NUTS
20
±0.25
30
140
124
6 - φ 7 MOUNTING HOLES
14
E1
G1
C1
11.5
E1
C1
CIRCUIT DIAGRAM
5
35
C2
E2
38
5
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
28
LABEL
31.5
Mar. 2003
MITSUBISHI HVIGBT MODULES
CM600E2Y-34H
HIGH POWER SWITCHING USE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS (Tj = 25°C)
Symbol Item Conditions UnitRatings
VCES
VGES
IC
ICM
IE
IEM
PC
Tj
Tstg
Viso
Collector-emitter voltage
Gate-emitter voltage
Collector current
(Note 2)
Emitter current
(Note 2)
Maximum collector dissipation
(Note 3)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Mass
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
I
CES
V
GE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
trr
Qrr
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
VFM
trr
Qrr
Rth(j-c)
Rth(c-f)
Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
(Note 2)
Emitter-collector voltage
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
Thermal resistance
Contact thermal resistance
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
2. I
E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Item Conditions
j) should not increase beyond 150°C.
VGE = 0V
CE = 0V
V
DC, T
C = 95°C
Pulse (Note 1)
Pulse (Note 1)
C = 25°C, IGBT part
T
—
—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value
V
CE = VCES, VGE = 0V
IC = 60mA, VCE = 10V
V
GE = VGES, VCE = 0V
T
j = 25°C
j = 125°C
T
CE = 10V
V
V
GE = 0V
CC = 850V, IC = 600A, VGE = 15V
V
V
CC = 850V, IC = 600A
V
GE1 = VGE2 = 15V
R
G = 3.3Ω
I
C = 600A, VGE = 15V (Note 4)
Resistive load switching operation
I
E = 600A, VGE = 0V
I
E = 600A
die / dt = –1200A / µs
Junction to case, IGBT part
Junction to case, FWDi part
Case to fin, conductive grease applied (Per 1/2 module)
IF = 600A, Clamp diode part
I
F = 600A
di
f / dt = –1200A / µs, Clamp diode part
Junction to case, Clamp diode part
Case to fin, conductive grease applied (Per 1/2 module)
–40 ~ +150
–40 ~ +125
6.67 ~ 13.00
2.84 ~ 6.00
0.88 ~ 2.00
Min Typ Max
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
INSULATED TYPE
1700
±20
600
1200
600
1200
6900
4000
1.5
Limits
—
5.54.5 6.5
—
2.75
3.30
70
10.0
3.8
3.3
—
—
—
—
2.40
—
100
—
—
0.016
2.50
—
100
—
0.016
15
0.5
3.58
—
—
—
—
—
1.20
1.50
2.00
0.60
3.12
2.00
—
0.018
0.056
—
3.25
2.00
—
0.056
—
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
N·m
kg
Unit
mA
V
µA
V
nF
nF
nF
µC
µs
µs
µs
µs
V
µs
µC
K/W
K/W
K/W
V
µs
µC
K/W
K/W
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)
Mar. 2003
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